{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,3]],"date-time":"2026-06-03T22:16:45Z","timestamp":1780525005153,"version":"3.54.1"},"reference-count":159,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2018,11,27]],"date-time":"2018-11-27T00:00:00Z","timestamp":1543276800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.<\/jats:p>","DOI":"10.3390\/s18124163","type":"journal-article","created":{"date-parts":[[2018,11,27]],"date-time":"2018-11-27T12:17:35Z","timestamp":1543321055000},"page":"4163","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":24,"title":["Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection"],"prefix":"10.3390","volume":"18","author":[{"given":"Nasir","family":"Ilyas","sequence":"first","affiliation":[{"name":"School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dongyang","family":"Li","sequence":"additional","affiliation":[{"name":"School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuhao","family":"Song","sequence":"additional","affiliation":[{"name":"School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hao","family":"Zhong","sequence":"additional","affiliation":[{"name":"School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yadong","family":"Jiang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Li","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2018,11,27]]},"reference":[{"key":"ref_1","unstructured":"Dawes, D.G., and Turner, D. 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