{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:07:19Z","timestamp":1760242039664,"version":"build-2065373602"},"reference-count":23,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2018,12,28]],"date-time":"2018-12-28T00:00:00Z","timestamp":1545955200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"Chinese National Science Foundation","doi-asserted-by":"publisher","award":["No. 61504130, No.61704165 and No. 5172015004"],"award-info":[{"award-number":["No. 61504130, No.61704165 and No. 5172015004"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"the Science and Technology on Analog Integrated Circuit Laboratory Stability support project\u2019s financial","award":["No.6142802WD201806"],"award-info":[{"award-number":["No.6142802WD201806"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A novel three-dimensional (3D) hermetic packaging technique suitable for capacitive microelectromechanical systems (MEMS) sensors is studied. The composite substrate with through silicon via (TSV) is used as the encapsulation cap fabricated by a glass-in-silicon (GIS) reflow process. In particular, the low-resistivity silicon pillars embedded in the glass cap are designed to serve as the electrical feedthrough and the fixed capacitance plate at the same time to simplify the fabrication process and improve the reliability. The fabrication process and the properties of the encapsulation cap were studied systematically. The resistance of the silicon vertical feedthrough was measured to be as low as 263.5 m\u03a9, indicating a good electrical interconnection property. Furthermore, the surface root-mean-square (RMS) roughnesses of glass and silicon were measured to be 1.12 nm and 0.814 nm, respectively, which were small enough for the final wafer bonding process. Anodic bonding between the encapsulation cap and the silicon wafer with sensing structures was conducted in a vacuum to complete the hermetic encapsulation. The proposed packaging scheme was successfully applied to a capacitive gyroscope. The quality factor of the packaged gyroscope achieved above 220,000, which was at least one order of magnitude larger than that of the unpackaged. The validity of the proposed packaging scheme could be verified. Furthermore, the packaging failure was less than 1%, which demonstrated the feasibility and reliability of the technique for high-performance MEMS vacuum packaging.<\/jats:p>","DOI":"10.3390\/s19010093","type":"journal-article","created":{"date-parts":[[2018,12,28]],"date-time":"2018-12-28T11:52:42Z","timestamp":1545997962000},"page":"93","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via"],"prefix":"10.3390","volume":"19","author":[{"given":"Meng","family":"Zhang","sequence":"first","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9086-6259","authenticated-orcid":false,"given":"Jian","family":"Yang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yurong","family":"He","sequence":"additional","affiliation":[{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fan","family":"Yang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fuhua","family":"Yang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guowei","family":"Han","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chaowei","family":"Si","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin","family":"Ning","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2018,12,28]]},"reference":[{"key":"ref_1","unstructured":"Hsu, T.-R. 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