{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,5]],"date-time":"2026-05-05T18:45:33Z","timestamp":1778006733931,"version":"3.51.4"},"reference-count":38,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2019,1,9]],"date-time":"2019-01-09T00:00:00Z","timestamp":1546992000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61471324"],"award-info":[{"award-number":["61471324"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["51425505"],"award-info":[{"award-number":["51425505"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["51875534"],"award-info":[{"award-number":["51875534"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21\u2013400 \u00b0C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height \u0424B, and temperature. The sensitivity of the diode sensors is 0.81 mV\/\u00b0C, 1.37 mV\/\u00b0C, and 1.59 mV\/\u00b0C when the forward current density of the diode is 1 \u00d7 10\u22125 A\/cm2, 1 \u00d7 10\u22124 A\/cm2, and 1 \u00d7 10\u22123 A\/cm2, respectively.<\/jats:p>","DOI":"10.3390\/s19020224","type":"journal-article","created":{"date-parts":[[2019,1,10]],"date-time":"2019-01-10T03:22:31Z","timestamp":1547090551000},"page":"224","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-0064-2217","authenticated-orcid":false,"given":"Qianqian","family":"Guo","sequence":"first","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0521-4457","authenticated-orcid":false,"given":"Fei","family":"Lu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7877-9278","authenticated-orcid":false,"given":"Qiulin","family":"Tan","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tianhao","family":"Zhou","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jijun","family":"Xiong","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wendong","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrumentation Science &amp; Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China"},{"name":"Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,1,9]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Zhang, E.N. (2014). 4H-Silicon Carbide PN Diode for Harsh Environment Temperature Sensing Applications, University of California at Berkeley.","DOI":"10.1117\/12.2050768"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1065","DOI":"10.1109\/JPROC.2002.1021571","article-title":"High-temperature electronics\u2014A role for wide bandgap semiconductors","volume":"90","author":"Neudeck","year":"2002","journal-title":"Proc. IEEE"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Shao, S., Lien, W.C., Maralani, A., and Pisano, A.P. (2014, January 22\u201326). Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment. Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy.","DOI":"10.1109\/ESSDERC.2014.6948777"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"884","DOI":"10.1016\/j.diamond.2009.01.011","article-title":"Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs","volume":"18","author":"Dipalo","year":"2009","journal-title":"Diam. Relat. Mater."},{"key":"ref_5","first-page":"R961","article-title":"GaN-based diodes and transistors for chemical, gas, biological and pressure sensing","volume":"16","author":"Pearton","year":"2004","journal-title":"J. Phys."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1016\/j.apsusc.2016.01.178","article-title":"Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing","volume":"368","author":"So","year":"2016","journal-title":"Appl. Surf. Sci."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1708","DOI":"10.1049\/el:20031129","article-title":"GaN HFET digital circuit technology for harsh environments","volume":"39","author":"Hussain","year":"2003","journal-title":"Electron. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"492","DOI":"10.1063\/1.4939509","article-title":"Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN\/GaN surfaces","volume":"108","author":"So","year":"2016","journal-title":"Appl. Phys. Lett."},{"key":"ref_9","unstructured":"Gregory, O.J., Conkle, J.R., and Birnbaum, T.J. (2013). Wireless Temperature Measurement System and Methods of Making and Using Same. (US8348504), U.S. Patent."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1269","DOI":"10.1126\/science.1083212","article-title":"Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor","volume":"300","author":"Nomura","year":"2003","journal-title":"Science"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"488","DOI":"10.1038\/nature03090","article-title":"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors","volume":"432","author":"Nomura","year":"2004","journal-title":"Nature"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"112123","DOI":"10.1063\/1.2353811","article-title":"High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering","volume":"89","author":"Yabuta","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"081607","DOI":"10.1143\/JJAP.48.081607","article-title":"Flexible high-performance amorphous InGaZnO4 thin-film transistors utilizing excimer laser annealing","volume":"48","author":"Nakata","year":"2009","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"2007","DOI":"10.1063\/1.3525932","article-title":"Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films","volume":"97","author":"Lorenz","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"1695","DOI":"10.1109\/LED.2011.2167123","article-title":"Diffusion-Limited a-IGZO\/Pt Schottky Junction Fabricated at 200 \u00b0C on a Flexible Substrate","volume":"32","author":"Lee","year":"2011","journal-title":"IEEE Electron Device Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"4097","DOI":"10.1038\/ncomms5097","article-title":"Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors","volume":"5","author":"Chen","year":"2014","journal-title":"Nat. Commun."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"389","DOI":"10.1109\/LED.2016.2535904","article-title":"Room Temperature Processed Ultrahigh-Frequency Indium-Gallium\u2013Zinc-Oxide Schottky Diode","volume":"37","author":"Zhang","year":"2016","journal-title":"IEEE Electron Device Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"2945","DOI":"10.1002\/adma.201103228","article-title":"Oxide semiconductor thin-film transistors: A review of recent advances","volume":"24","author":"Fortunato","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1679","DOI":"10.1016\/j.tsf.2011.07.018","article-title":"Review of recent developments in amorphous oxide semiconductor thin-film transistor devices","volume":"520","author":"Park","year":"2012","journal-title":"Thin Solid Films"},{"key":"ref_20","doi-asserted-by":"crossref","unstructured":"Chasin, A., Steudel, S., Vanaverbeke, F., Myny, K., Nag, M., Ke, T.H., Schols, S., Gielen, G., Genoe, J., and Heremans, P. (2012, January 10\u201313). UHF IGZO Schottky diode. Proceedings of the Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2012.6479030"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"3407","DOI":"10.1109\/TED.2013.2275250","article-title":"Gigahertz operation of a-IGZO Schottky diodes","volume":"60","author":"Chasin","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"8586","DOI":"10.1039\/C7NR02305G","article-title":"Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode","volume":"9","author":"Lin","year":"2017","journal-title":"Nanoscale"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"011401","DOI":"10.1143\/JJAP.51.011401","article-title":"Effects of metal electrode on the electrical performance of amorphous In\u2013Ga\u2013Zn\u2013O thin film transistor","volume":"51","author":"Yim","year":"2012","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1038\/asiamat.2010.5","article-title":"Material characteristics and applications of transparent amorphous oxide, semiconductors","volume":"2","author":"Kamiya","year":"2010","journal-title":"NPG Asia Mater."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"1489","DOI":"10.1016\/j.tsf.2011.08.088","article-title":"Role of environmental and annealing conditions on the passivation-free in-Ga\u2013Zn\u2013O TFT","volume":"520","author":"Fuh","year":"2011","journal-title":"Thin Solid Films"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"7561","DOI":"10.1038\/ncomms8561","article-title":"Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz","volume":"6","author":"Zhang","year":"2015","journal-title":"Nat. Commun."},{"key":"ref_27","first-page":"1","article-title":"Graphene Schottky diodes: An experimental review of the rectifying graphene\/semiconductor heterojunction","volume":"606","year":"2016","journal-title":"Phys. Rep. Rev. Sect. Phys. Lett."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"38","DOI":"10.1016\/j.tsf.2004.11.223","article-title":"Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4","volume":"486","author":"Takagi","year":"2005","journal-title":"Thin Solid Films"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"3012","DOI":"10.1016\/j.tsf.2009.09.193","article-title":"Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress","volume":"518","author":"Nomura","year":"2010","journal-title":"Thin Solid Films"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"133503","DOI":"10.1063\/1.2857463","article-title":"Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states","volume":"92","author":"Hsieh","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"192107","DOI":"10.1063\/1.3020714","article-title":"Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2, annealing","volume":"93","author":"Nomura","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"133512","DOI":"10.1063\/1.2904704","article-title":"Trap densities in amorphous-InGaZnO4 thin-film transistors","volume":"92","author":"Kimura","year":"2008","journal-title":"Appl. Phys. Lett."},{"key":"ref_33","unstructured":"Rhoderick, E.H., and Williams, R.H. (1988). Metal-Semiconductor Contacts, Oxford Univ. Press. [2nd ed.]."},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Sze, S.M., and Ng, K.K. (2007). Physics of Semiconductor Devices, Wiley-Interscience. [3rd ed.].","DOI":"10.1002\/0470068329"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"113505","DOI":"10.1063\/1.4752009","article-title":"High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts","volume":"101","author":"Chasin","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"512","DOI":"10.1016\/j.matchemphys.2011.10.013","article-title":"Role of Ga2O3\u2013In2O3\u2013ZnO channel composition on the electrical performance of thin-film transistors","volume":"131","author":"Olziersky","year":"2011","journal-title":"Mater. Chem. Phys."},{"key":"ref_37","first-page":"015024","article-title":"Tunable Schottky barrier and high responsivity in graphene\/Sinanotip optoelectronic device","volume":"4","author":"Giubileo","year":"2017","journal-title":"2D Mater."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1016\/j.jallcom.2009.04.119","article-title":"The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I\u2013V characteristics","volume":"484","author":"Tataroglu","year":"2009","journal-title":"J. Alloys Compd."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/2\/224\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T12:24:38Z","timestamp":1760185478000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/2\/224"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,1,9]]},"references-count":38,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2019,1]]}},"alternative-id":["s19020224"],"URL":"https:\/\/doi.org\/10.3390\/s19020224","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,1,9]]}}}