{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,12]],"date-time":"2025-12-12T13:33:18Z","timestamp":1765546398586,"version":"build-2065373602"},"reference-count":24,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2019,1,13]],"date-time":"2019-01-13T00:00:00Z","timestamp":1547337600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper proposes a CMOS front-end readout-integrated circuit (ROIC) with on-chip non-uniformity compensation technique for a diode-based uncooled infrared image sensor. Two techniques are adopted to achieve on-chip non-uniformity compensation: a reference dummy metal line is introduced to alleviate the dominant non-uniformity with IR-drop presented in large pixel array, and a current splitting architecture-based variable current source for diode bias is proposed to compensate other residual non-uniformity. A differential integrator is chosen as the main amplifier of readout circuit for its superior noise performance. For low power design, a pulse-powered row buffer is designed in this work. The proposed ROIC for 384 \u00d7 288 diode-based detector array is fabricated with a 0.35-   \u03bc   m CMOS process. It occupies an area of 4.4 mm \u00d7 15 mm, and the power consumption is 180 mW. The measured result shows that with the proposed on-chip non-uniformity compensation, the output voltage variation is greatly reduced from 2.5 V to 60 mV.<\/jats:p>","DOI":"10.3390\/s19020298","type":"journal-article","created":{"date-parts":[[2019,1,14]],"date-time":"2019-01-14T12:20:07Z","timestamp":1547468407000},"page":"298","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["An Analog-Front ROIC with On-Chip Non-Uniformity Compensation for Diode-Based Infrared Image Sensors"],"prefix":"10.3390","volume":"19","author":[{"given":"Mao","family":"Ye","sequence":"first","affiliation":[{"name":"Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China"}]},{"given":"Gongyuan","family":"Zhao","sequence":"additional","affiliation":[{"name":"Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China"},{"name":"Tianjin Infrared Imaging Technology Engineering Center, Tianjin University, Tianjin 300072, China"}]},{"given":"Yao","family":"Li","sequence":"additional","affiliation":[{"name":"Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China"}]},{"given":"Yiqiang","family":"Zhao","sequence":"additional","affiliation":[{"name":"Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China"},{"name":"Tianjin Infrared Imaging Technology Engineering Center, Tianjin University, Tianjin 300072, China"}]}],"member":"1968","published-online":{"date-parts":[[2019,1,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Balcerak, R.S. 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