{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,24]],"date-time":"2025-12-24T20:54:46Z","timestamp":1766609686709,"version":"build-2065373602"},"reference-count":22,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2019,1,17]],"date-time":"2019-01-17T00:00:00Z","timestamp":1547683200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of \u03b3 radiation. The resistance and radiation responses to \u03b3 radiation were investigated by radiation experiments using 137Cs and 60Co \u03b3-ray sources. The radiation resistance of 4T-APS was studied by testing the mean and the maximum dark current of the sensors after irradiation. A random spatial distribution of radiation response events was observed upon analyzing these events on the video images in a given time during irradiation. The background dependence of the 4T-APS was also studied by comparing the grayscale incremental value of the images with different color and grayscale backgrounds: the radiation response events were obvious on the images with a background having a smaller grayscale value or a deeper color. Finally, the color saturation and resolution of the images were tested using a vector oscilloscope and a test card. When the total ionizing dose was less than or equal to the damage threshold, no significant performance deterioration of 4T-APS was observed in an environment with sufficient light.<\/jats:p>","DOI":"10.3390\/s19020359","type":"journal-article","created":{"date-parts":[[2019,1,17]],"date-time":"2019-01-17T11:30:27Z","timestamp":1547724627000},"page":"359","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Video Monitoring Application of CMOS 4T-PPD-APS Under \u03b3-ray Radiation"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6614-9639","authenticated-orcid":false,"given":"Shoulong","family":"Xu","sequence":"first","affiliation":[{"name":"School of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, China"},{"name":"Department of Engineering Physics, Tsinghua University, Beijing 100084, China"}]},{"given":"Shuliang","family":"Zou","sequence":"additional","affiliation":[{"name":"School of Resource Environment and Safety Engineering, University of South China, Hengyang 421001, China"}]},{"given":"Yongchao","family":"Han","sequence":"additional","affiliation":[{"name":"China Institute of Atomic Energy, Beijing 102413, China"}]},{"given":"Yantao","family":"Qu","sequence":"additional","affiliation":[{"name":"China Institute of Atomic Energy, Beijing 102413, China"}]},{"given":"Taoyi","family":"Zhang","sequence":"additional","affiliation":[{"name":"Beijing Institute of Control Engineering, Beijing 100084, China"}]}],"member":"1968","published-online":{"date-parts":[[2019,1,17]]},"reference":[{"key":"ref_1","first-page":"53","article-title":"Calculation and Analysis for the Radiation Condition in the Containment of PWR after Severe Accident","volume":"33","author":"Wang","year":"2013","journal-title":"Nucl. 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