{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,22]],"date-time":"2026-07-22T04:55:49Z","timestamp":1784696149240,"version":"3.55.0"},"reference-count":27,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2019,1,17]],"date-time":"2019-01-17T00:00:00Z","timestamp":1547683200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Semiconducting metal oxide (SMO) gas sensors were designed, fabricated, and characterized in terms of their sensing capability and the thermo-mechanical behavior of the micro-hotplate. The sensors demonstrate high sensitivity at low concentrations of volatile organic compounds (VOCs) at a low power consumption of 10.5 mW. In addition, the sensors realize fast response and recovery times of 20 s and 2.3 min, respectively. To further improve the baseline stability and sensing response characteristics at low power consumption, a novel sensor is conceived of and proposed. Tantalum aluminum (TaAl) is used as a microheater, whereas Pt-doped SnO2 is used as a thin film sensing layer. Both layers were deposited on top of a porous silicon nitride membrane. In this paper, two designs are characterized by simulations and experimental measurements, and the results are comparatively reported. Simultaneously, the impact of a heat pulsing mode and rubber smartphone cases on the sensing performance of the gas sensor are highlighted.<\/jats:p>","DOI":"10.3390\/s19020374","type":"journal-article","created":{"date-parts":[[2019,1,17]],"date-time":"2019-01-17T11:30:27Z","timestamp":1547724627000},"page":"374","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":25,"title":["Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4680-0498","authenticated-orcid":false,"given":"Ayoub","family":"Lahlalia","sequence":"first","affiliation":[{"name":"Institute for Microelectronics, TU Wien, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Olivier","family":"Le Neel","sequence":"additional","affiliation":[{"name":"STMicroelectronics Pte Ltd., Singapore 569508, Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1633-2769","authenticated-orcid":false,"given":"Ravi","family":"Shankar","sequence":"additional","affiliation":[{"name":"STMicroelectronics Pte Ltd., Singapore 569508, Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5583-6177","authenticated-orcid":false,"given":"Siegfried","family":"Selberherr","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics, TU Wien, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1687-5058","authenticated-orcid":false,"given":"Lado","family":"Filipovic","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics, TU Wien, 1040 Vienna, Austria"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,1,17]]},"reference":[{"key":"ref_1","unstructured":"MarketsandMarkets (2018, July 21). 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