{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,12]],"date-time":"2026-05-12T01:20:56Z","timestamp":1778548856384,"version":"3.51.4"},"reference-count":27,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2019,1,31]],"date-time":"2019-01-31T00:00:00Z","timestamp":1548892800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The effects of sub-band-gap light radiation on the performance of CdZnTe photon-counting X-ray detectors were studied using infrared light with different wavelengths in the region of 980\u20131550 nm. The performance of the detectors for X-ray detection was improved by the radiation of infrared light with the wavelengths of 1200 nm and 1300 nm. This was because the increase of the electron indirect transition, and the weakening of the built-in electric field induced by the trapped holes, reduced the drift time of the carrier, and increased the charge collection efficiency. To further analyze the intrinsic behavior of the trapped charge, the deep-level defects of CdZnTe crystal were measured by thermally stimulated current spectroscopy (TSC). The deep-level defect indicated by the trap named T4 in TSC spectra with the ionization energy of 0.43 eV should be responsible for the performance deterioration of CdZnTe detectors.<\/jats:p>","DOI":"10.3390\/s19030600","type":"journal-article","created":{"date-parts":[[2019,2,1]],"date-time":"2019-02-01T03:08:05Z","timestamp":1548990485000},"page":"600","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Improvement to the Carrier Transport Properties of CdZnTe Detector Using Sub-Band-Gap Light Radiation"],"prefix":"10.3390","volume":"19","author":[{"given":"Xiangxiang","family":"Luo","sequence":"first","affiliation":[{"name":"State Key Laboratory of Solidification Processing, and MIIT Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi\u2019an 710072, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gangqiang","family":"Zha","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Solidification Processing, and MIIT Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi\u2019an 710072, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lingyan","family":"Xu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Solidification Processing, and MIIT Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi\u2019an 710072, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wanqi","family":"Jie","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Solidification Processing, and MIIT Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi\u2019an 710072, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,1,31]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"103","DOI":"10.1016\/S0927-796X(01)00027-4","article-title":"Cadmium zinc telluride and its use as a nuclear radiation detector material","volume":"32","author":"Schlesinger","year":"2001","journal-title":"Mater. 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