{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T03:33:18Z","timestamp":1760239998435,"version":"build-2065373602"},"reference-count":27,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2019,2,19]],"date-time":"2019-02-19T00:00:00Z","timestamp":1550534400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003141","name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","doi-asserted-by":"publisher","award":["1625\/FRONTERAS201601"],"award-info":[{"award-number":["1625\/FRONTERAS201601"]}],"id":[{"id":"10.13039\/501100003141","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, we present structural and luminescence studies of silicon-rich silicon oxide (SRO) and SRO-Si     3    N     4     bi-layers for integration in emitter-waveguide pairs that can be used for photonic lab-on-a-chip sensing applications. The results from bi and mono layers are also compared. Two clearly separated emission bands are respectively attributed to a combination of defect and quantum confinement\u2013related emission in the SRO, as well as to defects found in an oxynitride transition zone that forms between the oxide and the nitride films, while ruling out quantum-confinement phenomena in the silicon nitride.<\/jats:p>","DOI":"10.3390\/s19040865","type":"journal-article","created":{"date-parts":[[2019,2,20]],"date-time":"2019-02-20T03:05:52Z","timestamp":1550631952000},"page":"865","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources"],"prefix":"10.3390","volume":"19","author":[{"given":"Alfredo A.","family":"Gonz\u00e1lez-Fern\u00e1ndez","sequence":"first","affiliation":[{"name":"INAOE, Department of Electronics, P.O. Box 51, Puebla 72000, Mexico"}]},{"given":"Joan","family":"Juvert","sequence":"additional","affiliation":[{"name":"Institut de Microelectr\u00f2nica de Barcelona, CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9944-7923","authenticated-orcid":false,"given":"Mariano","family":"Aceves-Mijares","sequence":"additional","affiliation":[{"name":"INAOE, Department of Electronics, P.O. Box 51, Puebla 72000, Mexico"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5972-7285","authenticated-orcid":false,"given":"Carlos","family":"Dom\u00ednguez","sequence":"additional","affiliation":[{"name":"Institut de Microelectr\u00f2nica de Barcelona, CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain"}]}],"member":"1968","published-online":{"date-parts":[[2019,2,19]]},"reference":[{"key":"ref_1","first-page":"1","article-title":"Enhanced Electroluminescence Efficiency in Si-Nanostructure-Based Silicon-Nitride Light-Emitting Diodes via H2 Plasma Treatment","volume":"10","author":"Lin","year":"2018","journal-title":"IEEE Photonics J."},{"doi-asserted-by":"crossref","unstructured":"Alarc\u00f3n-Salazar, J., L\u00f3pez-Estopier, R., Quiroga-Gonz\u00e1lez, E., Morales-S\u00e1nchez, A., Pedraza-Ch\u00e1vez, J., Zald\u00edvar-Huerta, I.E., and Aceves-Mijares, M. (2016). Silicon-Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition to Develop Silicon Light Sources. 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