{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,23]],"date-time":"2026-04-23T10:06:31Z","timestamp":1776938791981,"version":"3.51.4"},"reference-count":22,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. An MSM-type UV sensor had a low dark current density of 3.3 \u00d7 10\u22127 A\/cm2 and a high UV\/visible rejection ratio of 103. The GaN SB-MOSFET showed a normally-off operation and exhibited a maximum drain current of 0.5 mA\/mm and a maximum transconductance of 30 \u03bcS\/mm with a threshold voltage of 4.5 V. The UV PPS showed good UV response and a high dark-to-photo contrast ratio of 103 under irradiation of 365-nm UV. This integration technique will provide one possible way for a monolithic integration of the GaN-based optoelectronic devices.<\/jats:p>","DOI":"10.3390\/s19051051","type":"journal-article","created":{"date-parts":[[2019,3,4]],"date-time":"2019-03-04T05:45:36Z","timestamp":1551678336000},"page":"1051","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5584-2115","authenticated-orcid":false,"given":"Chang-Ju","family":"Lee","sequence":"first","affiliation":[{"name":"School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chul-Ho","family":"Won","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jung-Hee","family":"Lee","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sung-Ho","family":"Hahm","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2582-2230","authenticated-orcid":false,"given":"Hongsik","family":"Park","sequence":"additional","affiliation":[{"name":"School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,3,1]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"7433","DOI":"10.1063\/1.362677","article-title":"Semiconductor Ultraviolet Detectors","volume":"79","author":"Razeghi","year":"1996","journal-title":"J. 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