{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,28]],"date-time":"2026-07-28T05:47:30Z","timestamp":1785217650453,"version":"3.55.0"},"reference-count":52,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2019,3,2]],"date-time":"2019-03-02T00:00:00Z","timestamp":1551484800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 \u00d7 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV\/pH, a maximum current sensitivity of 15.71 mA1\/2\/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.<\/jats:p>","DOI":"10.3390\/s19051063","type":"journal-article","created":{"date-parts":[[2019,3,4]],"date-time":"2019-03-04T05:45:36Z","timestamp":1551678336000},"page":"1063","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":31,"title":["Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3391-1698","authenticated-orcid":false,"given":"Salvatore A.","family":"Pullano","sequence":"first","affiliation":[{"name":"Department of Health Sciences, University \u201cMagna Gr\u00e6cia\u201d of Catanzaro, 88100 Catanzaro, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nishat T.","family":"Tasneem","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of North Texas, Denton, TX 76203, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5561-0880","authenticated-orcid":false,"given":"Ifana","family":"Mahbub","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, University of North Texas, Denton, TX 76203, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Samira","family":"Shamsir","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Marta","family":"Greco","sequence":"additional","affiliation":[{"name":"Department of Health Sciences, University \u201cMagna Gr\u00e6cia\u201d of Catanzaro, 88100 Catanzaro, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Syed K.","family":"Islam","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6163-7804","authenticated-orcid":false,"given":"Antonino S.","family":"Fiorillo","sequence":"additional","affiliation":[{"name":"Department of Health Sciences, University \u201cMagna Gr\u00e6cia\u201d of Catanzaro, 88100 Catanzaro, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,3,2]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1893","DOI":"10.1002\/elan.200603609","article-title":"Bio FEDs (Field-Effect Devices): State-of-the-Art and New Directions","volume":"18","author":"Poghossian","year":"2006","journal-title":"Electroanalysis"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"7111","DOI":"10.3390\/s90907111","article-title":"Ion-Sensitive Field-Effect Transistor for Biological Sensing","volume":"9","author":"Lee","year":"2009","journal-title":"Sensors"},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Crespilho, F. (2013). Biosensors Based on Field-Effect Devices. Nanobioelectrochemistry, Springer.","DOI":"10.1007\/978-3-642-29250-7"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"478","DOI":"10.1590\/S0103-97332006000300066","article-title":"SnO2 extended gate field-effect transistor as pH sensor","volume":"36","author":"Batista","year":"2006","journal-title":"Braz. J. Phys."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"274","DOI":"10.1016\/j.snb.2012.11.023","article-title":"Low cost and flexible electrodes with NH3 plasma treatments in extended gate field effect transistors for urea detection","volume":"187","author":"Yang","year":"2013","journal-title":"Sens. Actuators B Chem."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"807","DOI":"10.1007\/s00339-015-9122-3","article-title":"ZnO nano-array-based EGFET biosensor for glucose detection","volume":"119","author":"Qi","year":"2015","journal-title":"Appl. Phys. A"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"3379","DOI":"10.1016\/j.bios.2009.04.011","article-title":"Selective calcium ion detection with functionalized ZnO nanorods-extended gate MOSFET","volume":"24","author":"Asif","year":"2009","journal-title":"Biosens. Bioelectron."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1938","DOI":"10.1021\/ac102489y","article-title":"Ultrasensitive in situ label-free DNA detection using a GaN nanowire-based extended-gate field-effect-transistor sensor","volume":"83","author":"Chen","year":"2011","journal-title":"Anal. Chem."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"1096","DOI":"10.1016\/j.bios.2008.06.012","article-title":"Extended-gate FET-based enzyme sensor with ferrocenyl-alkanethiol modified gold sensing electrode","volume":"24","author":"Ishige","year":"2009","journal-title":"Biosens. Bioelectron."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"155","DOI":"10.1016\/j.sna.2015.11.025","article-title":"A micro-machined hydrophone employing a piezoelectric body combined on the gate of a field-effect transistor","volume":"237","author":"Sung","year":"2016","journal-title":"Sens. Actuators A Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"719","DOI":"10.1016\/0924-4247(89)80065-2","article-title":"A P(VDF-TrFE)-based Integrated Ultrasonic Transducer","volume":"21\u201323","author":"Fiorillo","year":"1990","journal-title":"Sens. Actuators A Phys."},{"key":"ref_12","unstructured":"Van der Spiegel, J., and Fiorillo, A.S. (1993). Method of Manufacturing Ferroelectric MOSFET Sensors. (US5254504A), U.S. Patent."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"291","DOI":"10.1016\/0250-6874(83)85035-5","article-title":"The extended gate chemically sensitive field effect transistor as multi-species microprobe","volume":"4","author":"Lauks","year":"1983","journal-title":"Sens. Actuators"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"201","DOI":"10.1016\/0925-4005(95)85043-0","article-title":"A novel description of ISFET sensitivity with the buffer capacity and double-layer capacitance as key parameters","volume":"24","author":"Eijkel","year":"1995","journal-title":"Sens. Actuators B Chem."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"143508","DOI":"10.1063\/1.2084319","article-title":"ZnO extended-gate field-effect transistors as pH sensors","volume":"87","author":"Batista","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"15","DOI":"10.1504\/IJNT.2014.059806","article-title":"Hydrogen ion sensing characteristics of IGZO\/Si electrode in EGFET","volume":"11","author":"Yang","year":"2013","journal-title":"Int. J. Nanotechnol."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"456","DOI":"10.1016\/j.solidstatesciences.2008.07.014","article-title":"Extended gate field effect transistor using V2O5 xerogel sensing membrane by sol-gel method","volume":"11","author":"Guerra","year":"2009","journal-title":"Solid State Sci."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1109\/EDL.1980.25205","article-title":"Generalized guide for MOSFET miniaturization","volume":"1","author":"Brews","year":"1980","journal-title":"IEEE Electron Device Lett."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"5478","DOI":"10.1007\/s10853-010-4603-4","article-title":"Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor","volume":"45","author":"Batista","year":"2010","journal-title":"J. Mater. Sci."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"1651","DOI":"10.1016\/j.microrel.2011.10.026","article-title":"pH sensing reliability of flexible ITO\/PET electrodes on EGFETs prepared by a roll-to-roll process","volume":"52","author":"Lue","year":"2012","journal-title":"Microelectron. Reliab."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"4838","DOI":"10.1143\/JJAP.44.4838","article-title":"pH and procaine sensing characteristics of extended-gate field-effect transistor based on indium tin oxide glass","volume":"44","author":"Chou","year":"2005","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"930","DOI":"10.1109\/JSEN.2011.2162317","article-title":"Nanostructured EGFET pH sensors with surface-passivated ZnO thin-film and nanorod array","volume":"12","author":"Chiu","year":"2012","journal-title":"IEEE Sens. J."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"4785","DOI":"10.1007\/s00216-016-9568-y","article-title":"Immobilized rolling circle amplification on extended-gate field-effect transistors with integrated readout circuits for early detection of platelet-derived growth factor","volume":"408","author":"Lin","year":"2016","journal-title":"Anal. Bioanal. Chem."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"103901","DOI":"10.1063\/1.2779965","article-title":"Ultrasensitive, label-free, and real-time immunodetection using silicon field-effect transistors","volume":"91","author":"Kim","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"58","DOI":"10.1016\/j.bios.2018.04.048","article-title":"Recent advances on aptamer-based biosensors to detection of platelet-derived growth factor","volume":"113","author":"Razmi","year":"2018","journal-title":"Biosens. Bioelectron."},{"key":"ref_26","doi-asserted-by":"crossref","unstructured":"Pullano, S.A., Critello, C.D., Mahbub, I., Tasneem, N.T., Shamsir, S., Islam, S.K., Greco, M., and Fiorillo, A.S. (2018). EGFET-Based Sensors for Bioanalytical Applications: A Review. Sensors, 18.","DOI":"10.20944\/preprints201810.0251.v1"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"1094","DOI":"10.1109\/4.309905","article-title":"Series-Parallel Association of FET\u2019s for High Gain and High Frequency Applications","volume":"29","author":"Schneider","year":"1994","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"611","DOI":"10.1007\/s10470-016-0836-8","article-title":"A compact model for flicker noise in MOSFETs considering both correlated mobility and carrier number fluctuations","volume":"89","author":"Arnaud","year":"2016","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1016\/S0254-0584(99)00184-4","article-title":"Study on extended gate field effect transistor with tin oxide sensing membrane","volume":"63","author":"Chi","year":"2000","journal-title":"Mater. Chem. Phys."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"921","DOI":"10.1109\/16.918240","article-title":"l\/f noise in CMOS transistors for analog applications","volume":"48","author":"Brouk","year":"2001","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"654","DOI":"10.1109\/16.47770","article-title":"A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors","volume":"37","author":"Hung","year":"1990","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"2069","DOI":"10.1109\/16.333824","article-title":"Analytical and Experimental Studies of Thermal Noise in MOSFET\u2019s","volume":"41","author":"Tedja","year":"1994","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"1423","DOI":"10.1021\/acssensors.6b00520","article-title":"Hand-held transistor based electrical and multiplexed chemical sensing system","volume":"1","author":"Kaisti","year":"2016","journal-title":"ACS Sens."},{"key":"ref_34","unstructured":"D\u2019Agostino, F., and Quercia, D. (2000). Short-channel effects in MOSFETs. Introduction to VLSI Design (EECS 467), London\u2019s Global University."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"665","DOI":"10.1016\/j.microrel.2003.10.015","article-title":"AC analysis of an inverter amplifier using minimum-length trapezoidal association of transistors","volume":"44","author":"Girardi","year":"2004","journal-title":"Microelectron. Reliab."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"137","DOI":"10.1016\/0250-6874(84)80004-9","article-title":"Electronic semiconducting oxides as pH sensors","volume":"5","author":"Fog","year":"1984","journal-title":"Sens. Actuators"},{"key":"ref_37","doi-asserted-by":"crossref","unstructured":"Al-Hardan, N.H., Abdul Hamid, M.A., Ahmed, N.M., Jalar, A., Shamsudin, R., Othman, N.K., Kar Keng, L., Chiu, W., and Al-Rawi, H.N. (2016). High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors, 16.","DOI":"10.3390\/s16060839"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"199","DOI":"10.1016\/j.snb.2014.08.057","article-title":"Highly sensitive palladium oxide thin film extended gate FETs as pH sensor","volume":"205","author":"Das","year":"2014","journal-title":"Sens. Actuators B Chem."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"12","DOI":"10.1016\/S0254-0584(00)00373-4","article-title":"Study of indium tin oxide thin film for separative extended gate ISFET","volume":"70","author":"Yin","year":"2001","journal-title":"Mater. Chem. Phys."},{"key":"ref_40","unstructured":"Fuller, L. (2015). SPICE Model for NMOS and PMOS FETs in the CD4007 Chip, Rochester Institute of Technology."},{"key":"ref_41","doi-asserted-by":"crossref","unstructured":"Arafa, H., Obahiagbon, U., Kullman, D., Dom\u00ednguez, F., Magee, A., and Christen, J.B. (2016, January 9\u201311). Characterization and application of a discrete quartz extended-gate ISFET for the assessment of tumor cell viability. Proceedings of the IEEE Healthcare Innovation Point-of-Care Technologies Conference (HI-POCT), Cancun, Mexico.","DOI":"10.1109\/HIC.2016.7797697"},{"key":"ref_42","unstructured":"(2018, June 01). BS170 - LTwiki-Wiki for LTspice. Available online: htttp:\/\/ltwiki.org\/index.php?title=BS170."},{"key":"ref_43","doi-asserted-by":"crossref","unstructured":"Guliga, H., Abdullah, W.F.H., and Herman, S.H. (2014, January 9\u201310). Extended gate field effect transistor (EGFET) integrated readout interfacing circuit for pH sensing. Proceedings of the IEEE International Conference on Electrical, Electronics and System Engineering (ICEESE), Kuala Lumpur, Malaysia.","DOI":"10.1109\/ICEESE.2014.7154605"},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"214","DOI":"10.1109\/TNANO.2014.2378892","article-title":"Absorption of Urea into Zeolite Layer Integrated with Microelectronic Circuits","volume":"14","author":"Fiorillo","year":"2015","journal-title":"IEEE Trans. Nanotechnol."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"437","DOI":"10.1016\/j.bios.2017.07.010","article-title":"Detection principles of biological and chemical FET sensors","volume":"98","author":"Kaisti","year":"2017","journal-title":"Biosens. Bioelectron."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1016\/j.electacta.2017.12.130","article-title":"Polyaniline-functionalized ion-sensitive floating-gate FETs for the on-chip monitoring of peroxidase-catalyzed redox reactions","volume":"261","author":"Zhang","year":"2018","journal-title":"Electrochim. Acta"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"7594531","DOI":"10.1155\/2016\/7594531","article-title":"EGFET pH sensor performance dependence on sputtered TiO2 sensing membrane deposition temperature","volume":"2016","author":"Yusof","year":"2016","journal-title":"J. Sens."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"01AE16","DOI":"10.7567\/JJAP.55.01AE16","article-title":"Ionic pH and glucose sensors fabricated using hydrothermal ZnO nanostructures","volume":"55","author":"Wang","year":"2015","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"6279","DOI":"10.1109\/JSEN.2015.2455057","article-title":"High performance EGFET-based pH sensor utilizing low-cost industrial-grade touch panel film as the gate structure","volume":"15","author":"Wu","year":"2015","journal-title":"IEEE Sens. J."},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"9687","DOI":"10.3390\/s120709687","article-title":"A novel instrumentation circuit for electrochemical measurements","volume":"12","author":"Yin","year":"2012","journal-title":"Sensors"},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"027001","DOI":"10.1088\/0957-0233\/25\/2\/027001","article-title":"An embedded measurement system for electrical characterization of EGFET as pH sensor","volume":"25","author":"Batista","year":"2013","journal-title":"Meas. Sci. Technol."},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"1622","DOI":"10.1109\/LED.2012.2213794","article-title":"A novel pH sensor of extended-gate field-effect transistors with laser-irradiated carbon-nanotube network","volume":"33","author":"Chien","year":"2012","journal-title":"IEEE Electron Device Lett."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/5\/1063\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T12:35:48Z","timestamp":1760186148000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/5\/1063"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3,2]]},"references-count":52,"journal-issue":{"issue":"5","published-online":{"date-parts":[[2019,3]]}},"alternative-id":["s19051063"],"URL":"https:\/\/doi.org\/10.3390\/s19051063","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,3,2]]}}}