{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,21]],"date-time":"2026-07-21T15:57:45Z","timestamp":1784649465035,"version":"3.55.0"},"reference-count":35,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2019,5,14]],"date-time":"2019-05-14T00:00:00Z","timestamp":1557792000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"Military Foundation,Foundation strengthening project","award":["6141B012902,6141B012900,2017JCJQZD00604"],"award-info":[{"award-number":["6141B012902,6141B012900,2017JCJQZD00604"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Temperature is a significant factor in the application of graphene-based pressure sensors. The influence of temperature on graphene pressure sensors is twofold: an increase in temperature causes the substrates of graphene pressure sensors to thermally expand, and thus, the graphene membrane is stretched, leading to an increase in the device resistance; an increase in temperature also causes a change in the graphene electrophonon coupling, resulting in a decrease in device resistance. To investigate which effect dominates the influence of temperature on the pressure sensor based on the graphene\u2013boron nitride (BN) heterostructure proposed in our previous work, the temperature characteristics of two BN\/graphene\/BN heterostructures with and without a microcavity beneath them were analyzed in the temperature range 30\u2013150 \u00b0C. Experimental results showed that the resistance of the BN\/graphene\/BN heterostructure with a microcavity increased with the increase in temperature, and the temperature coefficient was up to 0.25%\u00b0C\u22121, indicating the considerable influence of thermal expansion in such devices. In contrast, with an increase in temperature, the resistance of the BN\/graphene\/BN heterostructure without a microcavity decreased with a temperature coefficient of \u22120.16%\u00b0C\u22121. The linearity of the resistance change rate (\u0394R\/R)\u2013temperature curve of the BN\/graphene\/BN heterostructure without a microcavity was better than that of the BN\/graphene\/BN heterostructure with a microcavity. These results indicate that the influence of temperature on the pressure sensors based on BN\/graphene\/BN heterostructures should be considered, especially for devices with pressure microcavities. BN\/graphene\/BN heterostructures without microcavities can be used as high-performance temperature sensors.<\/jats:p>","DOI":"10.3390\/s19102223","type":"journal-article","created":{"date-parts":[[2019,5,14]],"date-time":"2019-05-14T10:42:33Z","timestamp":1557830553000},"page":"2223","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":23,"title":["Temperature Characteristics of a Pressure Sensor Based on BN\/Graphene\/BN Heterostructure"],"prefix":"10.3390","volume":"19","author":[{"given":"Mengwei","family":"Li","sequence":"first","affiliation":[{"name":"Key Laboratory of Instrument Science &amp; Dynamic Measurement, North University of China, Taiyuan 030051, China"},{"name":"North University of China, Academy for Advanced Interdisciplinary Research, Taiyuan 030051, China"},{"name":"Institute of Microelectronics, Tsinghua University, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Teng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrument Science &amp; Dynamic Measurement, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Pengcheng","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrument Science &amp; Dynamic Measurement, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minghao","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Instrument Science &amp; Dynamic Measurement, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junqiang","family":"Wang","sequence":"additional","affiliation":[{"name":"Microsystem Integration Center, North University of China, Taiyuan 030051, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zewen","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Tsinghua University, Beijing 100084, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,5,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"5038","DOI":"10.1021\/nn201118c","article-title":"Transparent, Flexible, All-Reduced Graphene Oxide Thin Film Transistors","volume":"5","author":"He","year":"2011","journal-title":"ACS Nano"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"5016","DOI":"10.1039\/C4CS00423J","article-title":"Graphene-based membranes","volume":"44","author":"Liu","year":"2015","journal-title":"Chem. 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