{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,23]],"date-time":"2026-04-23T06:39:53Z","timestamp":1776926393350,"version":"3.51.2"},"reference-count":45,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2019,6,4]],"date-time":"2019-06-04T00:00:00Z","timestamp":1559606400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, electrical characteristics of MoTe2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH3) sensing, which confirms the p- and n-type behavior of MoTe2 devices.<\/jats:p>","DOI":"10.3390\/s19112551","type":"journal-article","created":{"date-parts":[[2019,6,5]],"date-time":"2019-06-05T09:37:58Z","timestamp":1559727478000},"page":"2551","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":42,"title":["Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7782-8362","authenticated-orcid":false,"given":"Asha","family":"Rani","sequence":"first","affiliation":[{"name":"School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kyle","family":"DiCamillo","sequence":"additional","affiliation":[{"name":"Department of Physics, Georgetown University, Washington, DC 20057, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0070-8872","authenticated-orcid":false,"given":"Md Ashfaque Hossain","family":"Khan","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Makarand","family":"Paranjape","sequence":"additional","affiliation":[{"name":"Department of Physics, Georgetown University, Washington, DC 20057, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mona E.","family":"Zaghloul","sequence":"additional","affiliation":[{"name":"School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,6,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 Transistors","volume":"6","author":"Radisavljevic","year":"2011","journal-title":"Nat. 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