{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,14]],"date-time":"2025-11-14T17:26:33Z","timestamp":1763141193087,"version":"build-2065373602"},"reference-count":19,"publisher":"MDPI AG","issue":"13","license":[{"start":{"date-parts":[[2019,6,30]],"date-time":"2019-06-30T00:00:00Z","timestamp":1561852800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, a wide dynamic range (WDR) CMOS image sensor (CIS) with a charge splitting gate (SG) and two storage diodes (SDs) is presented. By using single-gate on\/off control with the SG, photocurrent path to the first (SD1) or second storage diodes (SD2) is switched alternatively and periodically during exposure and signal electrons generated in a photodiode (PD) are transferred to and accumulated in the SD1 or SD2. By setting a large ratio of the off-time to on-time of the SG, two different sensitivity signals, which are originated by the same photodiode, are generated and a WDR image signal is obtained. This technique has a distinct advantage on mitigating the problem of motion artifact in WDR imaging with high and low sensitivity signals and flexible dynamic control of the dynamic range. An experimental WDR CMOS image sensor with 280 (H) \u00d7 406 (V)-pixel array consisting of 14 sub-arrays, each of which have 20 (H) \u00d7 406 (V) pixels, was implemented and tested. For the SG on\/off-time ratio of 30 and 279, the DR of 93 dB and 104 dB, respectively, was demonstrated. The effect of the proposed WDR imaging operation on the reduced motion artifact was experimentally confirmed.<\/jats:p>","DOI":"10.3390\/s19132904","type":"journal-article","created":{"date-parts":[[2019,7,1]],"date-time":"2019-07-01T03:23:59Z","timestamp":1561951439000},"page":"2904","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes"],"prefix":"10.3390","volume":"19","author":[{"given":"Minho","family":"Lee","sequence":"first","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Min-Woong","family":"Seo","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Juyeong","family":"Kim","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keita","family":"Yasutomi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keiichiro","family":"Kagawa","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0469-1676","authenticated-orcid":false,"given":"Jang-Kyoo","family":"Shin","sequence":"additional","affiliation":[{"name":"Kyungpook National University, Buk-gu, Daegu 702-701, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shoji","family":"Kawahito","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"},{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,6,30]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"314","DOI":"10.1109\/TED.2012.2226589","article-title":"Fixed-Pattern-Noise Correction for an Integrating Wide-Dynamic-Range CMOS Image Sensor","volume":"60","author":"Das","year":"2013","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1032","DOI":"10.1109\/TCSII.2007.908902","article-title":"Global Shutter CMOS Image Sensor with Wide Dynamic Range","volume":"54","author":"Belenky","year":"2007","journal-title":"IEEE Trans. Circuits Syst."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"85","DOI":"10.1109\/TCSII.2010.2104014","article-title":"A Wide-Dynamic-Range CMOS Image Sensor with Gating for Night Vision System","volume":"58","author":"Spivak","year":"2011","journal-title":"IEEE Trans. Circuits Syst."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"26","DOI":"10.1109\/TCSII.2012.2234918","article-title":"Memoryless Wide-Dynamic-Range CMOS Image Sensor Using Nonfully Depleted PPD-Storage Dual Capture","volume":"60","author":"Lee","year":"2013","journal-title":"IEEE Trans. Circuits Syst."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"2590","DOI":"10.1109\/TED.2008.2003023","article-title":"A Dual-Capture Wide Dynamic Range CMOS Image Sensor Using Floating-Diffusion Capacitor","volume":"55","author":"Kim","year":"2008","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1109\/JSEN.2006.888058","article-title":"A wide-dynamic-range CMOS image sensor based on multiple short exposure-time readout with multiple-resolution column-parallel ADC","volume":"7","author":"Sasaki","year":"2007","journal-title":"IEEE Sens. J."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2436","DOI":"10.1109\/TED.2009.2030644","article-title":"A 1.9e- Random Noise CMOS Image Sensor With Active Feedback Operation in Each Pixel","volume":"56","author":"Lee","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Kawada, S., Sakai, S., Tashiro, Y., and Sugawa, S. (2010, January 18\u201321). Checked White-RGB Color LOFIC CMOS Image Sensor. Proceedings of the 2010 Asia and South Pacific Design Automation Conference, Taipei, Taiwan.","DOI":"10.1109\/ASPDAC.2010.5419870"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Sugo, H., Wakashima, S., Kuroda, R., Yamashita, Y., Sumi, H., Wang, T., Chou, P., Hsu, M., and Sugawa, S. (2016, January 15\u201317). A Dead-time Free Global Shutter CMOS Image Sensor with in-pixel LOFIC and ADC using Pixel-wise Connection. Proceedings of the 2016 IEEE Symposium on VLSI Circuits, Honolulu, HI, USA.","DOI":"10.1109\/VLSIC.2016.7573544"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1915","DOI":"10.3390\/s8031915","article-title":"A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling","volume":"8","author":"Shafie","year":"2008","journal-title":"Sensors"},{"key":"ref_11","first-page":"2037","article-title":"A Dynamic Range Expansion Technique Using Dual Charge Storage in a CMOS APS and Multiple Exposures for Reduced Motion Blur","volume":"62","author":"Shafie","year":"2008","journal-title":"Trans. ITE"},{"key":"ref_12","unstructured":"Solhusvik, J., Yaghmai, S., Kimmels, A., Stephansen, C., Storm, A., Olsson, J., Rosnes, A., Martinussen, T., Willassen, T., and Pahr, P.O. (2019, June 29). A 1280 \u00d7 960 3.75 um pixel CMOS imager with Triple Exposure HDR. Available online: http:\/\/www.imagesensors.org\/Past%20Workshops\/2009%20Workshop\/2009%20Papers\/081_Solhusvik_HDR_DCG_final.pdf."},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Murata, M., Kuroda, R., Fujiwara, Y., Aoyagi, Y., Shiabata, H., Shibaguchi, T., Kamata, Y., Miura, N., Kuriyama, N., and Sugawa, S. (2018, January 1\u20135). A 24.3 Me- full well capacity CMOS image sensor with lateral overflow integration trench capacitor for high precision near infrared absorption imaging. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614590"},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Teranishi, N., Kohono, A., Ishihara, Y., Oda, E., and Arai, K. (1982, January 13\u201315). No image lag photodiode structure in the interline CCD image sensor. Proceedings of the 1982 International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.1982.190285"},{"key":"ref_15","first-page":"2787","article-title":"A Wide Dynamic Range CMOS Image Sensor with Two Different Sensitivity Storage Diodes","volume":"40","author":"Lee","year":"2016","journal-title":"IEEE J. Solid-State Cricuits."},{"key":"ref_16","first-page":"1721","article-title":"Wide Intrascene Dynamic Range CMOS APS Using Dual Sampling","volume":"4","author":"Fossum","year":"1997","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1109\/TED.2002.806965","article-title":"3-D optical and electrical simulation for CMOS image sensors","volume":"50","author":"Mutoh","year":"2003","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"272","DOI":"10.1109\/JSSC.2011.2164298","article-title":"A low-noise high intrascene dynamic range CMOS image sensor with a 13 to 19b variable-resolution column-parallel folding-integration\/cyclic ADC","volume":"47","author":"Seo","year":"2012","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_19","doi-asserted-by":"crossref","unstructured":"Mantiuk, R., Myszkowski, K., and Seidel, H.P. (2019, June 29). High Dynamic Range Imaging, Wiley Online Library. Available online: https:\/\/doi.org\/10.1002\/047134608X.W8265.","DOI":"10.1002\/047134608X.W8265"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/13\/2904\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:02:44Z","timestamp":1760187764000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/13\/2904"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,6,30]]},"references-count":19,"journal-issue":{"issue":"13","published-online":{"date-parts":[[2019,7]]}},"alternative-id":["s19132904"],"URL":"https:\/\/doi.org\/10.3390\/s19132904","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2019,6,30]]}}}