{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,7]],"date-time":"2026-06-07T16:51:59Z","timestamp":1780851119636,"version":"3.54.1"},"reference-count":44,"publisher":"MDPI AG","issue":"15","license":[{"start":{"date-parts":[[2019,7,27]],"date-time":"2019-07-27T00:00:00Z","timestamp":1564185600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2016YFA02005003"],"award-info":[{"award-number":["2016YFA02005003"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Nature Science Foundation of China","award":["61274066"],"award-info":[{"award-number":["61274066"]}]},{"name":"National Nature Science Foundation of China","award":["61504138"],"award-info":[{"award-number":["61504138"]}]},{"name":"National Nature Science Foundation of China","award":["61501421"],"award-info":[{"award-number":["61501421"]}]},{"name":"National Nature Science Foundation of China","award":["61474115"],"award-info":[{"award-number":["61474115"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The Resonant Integrated Optic Gyroscope (RIOG) is a type of high accuracy gyroscope based on the Sagnac effect. A symmetrical resonance curve is very important to the performance of the RIOG. To further investigate and design a RIOG with a waveguide ring resonator, an in-depth research of the asymmetric resonance curve and its influence on the RIOG is fully developed. Four possible optical noises inducing the resonance curve asymmetry are analyzed and their mathematic models are established. These four optical noises are the normal mode effect, the backscattering noise, the backreflection noise and the polarization noise. Any asymmetry of the resonance curve will not only induce a large output bias error into the gyro output, but also seriously decrease the frequency discrimination parameter of the demodulation curve. By using a tunable fiber laser, the high aspect ratio silicon nitride WRR and the silicon dioxide WRR were tested. The experiment measured resonance curves can be well fitted with the theoretical simulation results. The experimental results show that a high aspect ratio silicon nitride waveguide can effectively suppress the polarization noise in the RIOG.<\/jats:p>","DOI":"10.3390\/s19153305","type":"journal-article","created":{"date-parts":[[2019,7,29]],"date-time":"2019-07-29T03:06:58Z","timestamp":1564369618000},"page":"3305","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Asymmetry Analysis of the Resonance Curve in Resonant Integrated Optical Gyroscopes"],"prefix":"10.3390","volume":"19","author":[{"given":"Yu Ming","family":"He","sequence":"first","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fu Hua","family":"Yang","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"State Key Laboratory for Superlattices and Microstructures, Insititue of Semiconductors, Chinese Academy of Science, Beijing 100083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Yan","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei Hua","family":"Han","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhao Feng","family":"Li","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,7,27]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Wang, L., Zhang, C., Gao, S., Wang, T., Lin, T., and Li, X. 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