{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T03:34:53Z","timestamp":1768448093639,"version":"3.49.0"},"reference-count":18,"publisher":"MDPI AG","issue":"18","license":[{"start":{"date-parts":[[2019,9,7]],"date-time":"2019-09-07T00:00:00Z","timestamp":1567814400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz\/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz\/\u00b0C was obtained in the range of \u221245 \u00b0C to 65 \u00b0C, which is one order of magnitude lower than the previously reported counterparts.<\/jats:p>","DOI":"10.3390\/s19183866","type":"journal-article","created":{"date-parts":[[2019,9,9]],"date-time":"2019-09-09T04:12:40Z","timestamp":1568002360000},"page":"3866","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":18,"title":["A Temperature-Insensitive Resonant Pressure Micro Sensor Based on Silicon-on-Glass Vacuum Packaging"],"prefix":"10.3390","volume":"19","author":[{"given":"Pengcheng","family":"Yan","sequence":"first","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3826-5998","authenticated-orcid":false,"given":"Yulan","family":"Lu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chao","family":"Xiang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Junbo","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deyong","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4612-3279","authenticated-orcid":false,"given":"Jian","family":"Chen","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,9,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1016\/0924-4247(90)85028-3","article-title":"Silicon pressure sensor integrates resonant strain gauge on diaphragm","volume":"21","author":"Ikeda","year":"1990","journal-title":"Sens. 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