{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,24]],"date-time":"2026-03-24T20:20:21Z","timestamp":1774383621826,"version":"3.50.1"},"reference-count":17,"publisher":"MDPI AG","issue":"21","license":[{"start":{"date-parts":[[2019,10,26]],"date-time":"2019-10-26T00:00:00Z","timestamp":1572048000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["NRF-2017R1C1B5015844"],"award-info":[{"award-number":["NRF-2017R1C1B5015844"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 \u03bcm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowers the sensitivity and increases crosstalk because the aspect ratio is worsened by maintaining the height of the pixel. This work introduces a high-sensitivity pixel with a quad-WRGB (White, Red, Green, Blue) color filter array (CFA), spatial deep-trench isolation (S-DTI), and a spatial tungsten grid (S-WG). The optical performance of the suggested pixel was analyzed by performing 3D optical simulations at 1.0, 0.9, and 0.8 \u03bcm pixel pitches as small-sized pixels. The quad-WRGB CFA is compared with the quad-Bayer CFA, and the S-DTI and S-WG are compared with the conventional DTI and WG. We confirmed an improvement in the sensitivity of the suggested pixel using the quad-WRGB CFA with S-DTI and S-WG to a maximum of 58.2%, 67.0%, and 66.3% for 1.0, 0.9, and 0.8 \u03bcm pixels, respectively.<\/jats:p>","DOI":"10.3390\/s19214653","type":"journal-article","created":{"date-parts":[[2019,10,28]],"date-time":"2019-10-28T04:44:31Z","timestamp":1572237871000},"page":"4653","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":14,"title":["High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation"],"prefix":"10.3390","volume":"19","author":[{"given":"Yongnam","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Electronics Engineering, Dong-A University, Busan 49315, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4338-7642","authenticated-orcid":false,"given":"Yunkyung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electronics Engineering, Dong-A University, Busan 49315, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,10,26]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"JungChak, A., Chang-Rok, M., Bumsuk, K., Kyungho, L., Yitae, K., Moosup, L., Wook, L., Heemin, P., Kyoungsik, M., and Jaeryung, Y. (2008, January 15\u201317). Advanced image sensor technology for pixel scaling down toward 1.0 \u03bcm. Proceedings of the IEEE International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2008.4796671"},{"key":"ref_2","unstructured":"Hseih, B.-C., Siddiqui, H., Luo, J., Georgiev, T., Atanassov, K., Goma, S., Cheng, H.Y., Sze, J.J., Lin, R.J., and Chou, K.Y. (2015, January 8\u201311). New color filter patterns and demosaic for sub-micron pixel arrays. Proceedings of the International Image Sensor Workshop, Vaals, The Netherlands."},{"key":"ref_3","unstructured":"Yonemoto, K. (2003). Principles and Applications of CCD\/CMOS Image Sensors, CQ Publishing Co. Ltd."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Cheng, Y.W., Tsai, T.H., Chou, C.H., Lee, K.C., Chen, H.C., and Hsu, Y.L. (2015, January 7\u20139). Optical performance study of BSI image sensor with stacked grid structure. 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Proceedings of the 2017 IEEE Symposium on VLSI Technology, Kyoto, Japan.","DOI":"10.23919\/VLSIT.2017.7998212"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/21\/4653\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:29:34Z","timestamp":1760189374000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/21\/4653"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10,26]]},"references-count":17,"journal-issue":{"issue":"21","published-online":{"date-parts":[[2019,11]]}},"alternative-id":["s19214653"],"URL":"https:\/\/doi.org\/10.3390\/s19214653","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,10,26]]}}}