{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,15]],"date-time":"2026-04-15T18:33:26Z","timestamp":1776278006645,"version":"3.50.1"},"reference-count":40,"publisher":"MDPI AG","issue":"21","license":[{"start":{"date-parts":[[2019,11,5]],"date-time":"2019-11-05T00:00:00Z","timestamp":1572912000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100011033","name":"Agencia Estatal de Investigaci\u00f3n","doi-asserted-by":"publisher","award":["TEC2016-75151-C3-2-R"],"award-info":[{"award-number":["TEC2016-75151-C3-2-R"]}],"id":[{"id":"10.13039\/501100011033","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Differential temperature sensors can be placed in integrated circuits to extract a signature of the power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper first discusses the singularity that differential temperature sensors provide with respect to other sensor topologies, with circuit monitoring being their main application. The paper focuses on the monitoring of radio-frequency analog circuits. The strategies to extract the power signature of the monitored circuit are reviewed, and a list of application examples in the domain of test and characterization is provided. As a practical example, we elaborate the design methodology to conceive, step by step, a differential temperature sensor to monitor the aging degradation in a class-A linear power amplifier working in the 2.4 GHz Industrial Scientific Medical\u2014ISM\u2014band. It is discussed how, for this particular application, a sensor with a temperature resolution of 0.02 K and a high dynamic range is required. A circuit solution for this objective is proposed, as well as recommendations for the dimensions and location of the devices that form the temperature sensor. The paper concludes with a description of a simple procedure to monitor time variability.<\/jats:p>","DOI":"10.3390\/s19214815","type":"journal-article","created":{"date-parts":[[2019,11,7]],"date-time":"2019-11-07T02:48:31Z","timestamp":1573094911000},"page":"4815","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["Differential Temperature Sensors: Review of Applications in the Test and Characterization of Circuits, Usage and Design Methodology"],"prefix":"10.3390","volume":"19","author":[{"given":"Enrique","family":"Barajas","sequence":"first","affiliation":[{"name":"Electronic Engineering Department, Universitat Polit\u00e8cnica de Catalunya\u2013BarcelonaTech, 08034 Barcelona, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1352-8675","authenticated-orcid":false,"given":"Xavier","family":"Aragones","sequence":"additional","affiliation":[{"name":"Electronic Engineering Department, Universitat Polit\u00e8cnica de Catalunya\u2013BarcelonaTech, 08034 Barcelona, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5996-9092","authenticated-orcid":false,"given":"Diego","family":"Mateo","sequence":"additional","affiliation":[{"name":"Electronic Engineering Department, Universitat Polit\u00e8cnica de Catalunya\u2013BarcelonaTech, 08034 Barcelona, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6939-6475","authenticated-orcid":false,"given":"Josep","family":"Altet","sequence":"additional","affiliation":[{"name":"Electronic Engineering Department, Universitat Polit\u00e8cnica de Catalunya\u2013BarcelonaTech, 08034 Barcelona, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,11,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1109\/JSSC.2005.859902","article-title":"Power and temperature control on a 90-nm Itanium family processor","volume":"71","author":"McGowen","year":"2006","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_2","unstructured":"Woo, K., Meninger, S., Xanthopoulos, T., Crain, E., Ha, D., and Han, D. (2009, January 8\u201312). Dual-DDL-based CMOS all-digital temperature sensor for microprocessor thermal monitoring. Proceedings of the 2009 IEEE ISSCC, San Francisco, CA, USA."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"2860","DOI":"10.1109\/JSSC.2013.2280039","article-title":"Miniaturized BJT-Based Thermal Sensor for Microprocessors in 32- and 22-nm Technologies","volume":"48","author":"Shor","year":"2013","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Duarte, D.E., Geannopoulos, G., Mughal, U., Wong, K.L., and Taylor, G. (2007, January 16\u201319). Temperature Sensor Design in a High Volume Manufacturing 65nm CMOS Digital Process. Proceedings of the 2007 IEEE Custom Integrated Circuits Conference, San Jose, CA, USA.","DOI":"10.1109\/CICC.2007.4405718"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"217","DOI":"10.1109\/TDSC.2009.16","article-title":"On the Thermal Attack in Instruction Caches","volume":"7","author":"Kong","year":"2010","journal-title":"IEEE Trans. Dependable Secure Comput."},{"key":"ref_6","doi-asserted-by":"crossref","unstructured":"Yan, M., Wei, H., and Onabajo, M. (2018, January 5\u20138). Modeling of Thermal Coupling and Temperature Sensor Circuit Design Considerations for Hardware Trojan Detection. Proceedings of the 2018 IEEE 61st MWSCAS, Windsor, ON, Canada.","DOI":"10.1109\/MWSCAS.2018.8623865"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"1301","DOI":"10.1109\/TMTT.2013.2243750","article-title":"Integrated Self-Healing for mm-Wave Power Amplifiers","volume":"61","author":"Bowers","year":"2013","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1342","DOI":"10.1109\/TMTT.2012.2189119","article-title":"Millimeter-Wave Self-healing Power Amplifier With Adaptative Amplitude and Phase Linearization in 65 nm CMOS","volume":"60","author":"Liu","year":"2012","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2243","DOI":"10.1109\/TCSI.2014.2333311","article-title":"Indirect Performance Sensing for On-Chip Self-Healing of Analog and RF Circuits","volume":"61","author":"Sun","year":"2014","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_10","first-page":"745","article-title":"DC Temperature measurements to characterize the central frequency and 3dB Bandwidth in mmW Power Amplifier","volume":"15","author":"Mateo","year":"2015","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Abdallah, L., Stratigopoulos, H.G., Mir, S., and Altet, J. (May, January 29). Defect-oriented non-intrusive RF test using on-chip temperature sensors. Proceedings of the 2013 IEEE 31st VLSI Test Symposium, Berkeley, CA, USA.","DOI":"10.1109\/VTS.2013.6548889"},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Onabajo, M., and Silva-Mart\u00ednez, J. (2012). Analog Circuit Design for Process Variation-Resilient Systems-on-a-Chip, Springer.","DOI":"10.1007\/978-1-4614-2296-9"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"164","DOI":"10.1109\/JSSC.2017.2746671","article-title":"A Resistor-Based Temperature Sensor With a 0.13 pJ\u00b7K2 Resolution FoM","volume":"53","author":"Pan","year":"2018","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1098","DOI":"10.1109\/JSEN.2010.2040730","article-title":"Low-cost calibration techniques for smart temperature sensors","volume":"10","author":"Pertijs","year":"2010","journal-title":"IEEE Sens. J."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"1840","DOI":"10.1109\/JSEN.2013.2244033","article-title":"Low-power CMOS smart temperature sensor with a batch-calibrated inaccuracy of \u00b10.25 \u00b0C (\u00b13\u03c3) from -70 \u00b0C to 130 \u00b0C","volume":"13","author":"Aita","year":"2013","journal-title":"IEEE Sens. J."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1016\/j.sna.2018.09.006","article-title":"Design of a temperature sensor with optimized noise-power performance","volume":"282","author":"Heidari","year":"2018","journal-title":"Sens. Actuators A Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"12648","DOI":"10.3390\/s130912648","article-title":"A 0.0016mm2 0.64nJ Leakage-Based Temperature Sensor","volume":"13","author":"Ituero","year":"2013","journal-title":"Sensors"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1109\/JSEN.2013.2280647","article-title":"An energy efficient time-domain temperature sensor for low-power on-chip thermal management","volume":"14","author":"An","year":"2014","journal-title":"IEEE Sens. J."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"4234","DOI":"10.1109\/JSEN.2015.2414667","article-title":"A low power temperature to frequency converter for the on-chip temperature measurement","volume":"15","author":"Chouhan","year":"2015","journal-title":"IEEE Sens. J."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"2633","DOI":"10.1109\/JSEN.2014.2314659","article-title":"A Primary-Auxiliary Temperature Sensing Scheme for Multiple Hotspots in System-on-a-Chips","volume":"14","author":"Chen","year":"2014","journal-title":"IEEE Sens. J."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"3343","DOI":"10.1109\/JSEN.2013.2273572","article-title":"On-Chip MOSFET Temperature Sensor for Electrical Characterization of RF Circuits","volume":"13","author":"Reverter","year":"2013","journal-title":"IEEE Sens. J."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"155508","DOI":"10.1088\/0022-3727\/41\/15\/155508","article-title":"Steady-state sinuso\u00efdal thermal characterization at chip level by internal infrared-laser deflection","volume":"41","author":"Vellvehi","year":"2008","journal-title":"J. Phys. D Appl. Phys."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"81","DOI":"10.1109\/4.896232","article-title":"Thermal coupling in integrated circuits: Applications to thermal testing","volume":"6","author":"Altet","year":"2001","journal-title":"J. Solid State Circuits"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"277","DOI":"10.1109\/JSSC.1980.1051383","article-title":"Three-dimensional transient thermal simulation: Application to delayed short circuit protection in power Ics","volume":"15","author":"Antognetti","year":"1980","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"314","DOI":"10.1109\/JSSC.1974.1050524","article-title":"The monolothic op amp: A tutorial study","volume":"9","author":"Solomon","year":"1974","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_26","unstructured":"Altet, J., and Rubio, A. (May, January 27). Differential sensing strategy for dynamic thermal testing of ICs. Proceedings of the 15th IEEE VLSI Test Symposium, Monterey, CA, USA."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"484","DOI":"10.1016\/j.mejo.2014.02.009","article-title":"Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers","volume":"45","author":"Altet","year":"2014","journal-title":"Microelectron. J."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"1519","DOI":"10.1109\/JPROC.2006.879793","article-title":"Dynamic Surface Temperature Measurements in ICs","volume":"94","author":"Altet","year":"2006","journal-title":"Proc. IEEE"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"225","DOI":"10.1007\/s10836-011-5199-6","article-title":"Survey of Robustness Enhancement Techniques for Wireless Systems-on-a-Chip and Study of Temperature as Observable for Process Variations","volume":"27","author":"Onabajo","year":"2011","journal-title":"J. Electron. Test."},{"key":"ref_30","doi-asserted-by":"crossref","unstructured":"Altet, J., Mateo, D., G\u00f3mez, D., Perpi\u00f1\u00e0, X., Vellvehi, M., and Jord\u00e0, X. (2012, January 5\u20138). DC temperatura measurements for power gain monitoring in RF power amplifiers, Proc. Proceedings of the 2012 IEEE International Test Conference, Anaheim, CA, USA.","DOI":"10.1109\/TEST.2012.6401589"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1016\/j.sna.2012.12.010","article-title":"Effiency determination of RF linear power amplifiers by steady-state temperature monitors using built-in sensors","volume":"192","author":"Altet","year":"2013","journal-title":"Sens. Actuators A Phys."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"272","DOI":"10.1109\/LMWC.2013.2293668","article-title":"Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers","volume":"24","author":"Altet","year":"2014","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"115704","DOI":"10.1088\/0957-0233\/19\/11\/115704","article-title":"A heterodyne method for the thermal observation of the electrical behavior of high-frequency integrated circuits","volume":"19","author":"Altet","year":"2008","journal-title":"Meas. Sci. Technol."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"458","DOI":"10.1109\/TCSI.2010.2072372","article-title":"Electrothermal design procedure to observe RF circuit power and linearity characteristics with a homodyne differential temperature sensor","volume":"58","author":"Onabajo","year":"2011","journal-title":"IEEE Trans. Circuits Syst. I Regul. Pap."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"618","DOI":"10.1109\/TCAPT.2007.906349","article-title":"Differential Temperature Sensors Fully Compatible with a 0.35 \u00b5m CMOS Process","volume":"30","author":"Mateo","year":"2007","journal-title":"IEEE Trans. Compon. Packag. Technol."},{"key":"ref_36","first-page":"07514","article-title":"Strategies for built-in characterization testing and performance monitoring of analog RF circuits with temperature measurements","volume":"21","author":"Mateo","year":"2010","journal-title":"Meas. Sci. Technol."},{"key":"ref_37","doi-asserted-by":"crossref","unstructured":"Barajas, E., Rungta, A., Mateo, D., Aragones, X., and Altet, J. (2019, January 20\u201322). On the Use of Built-in Temperature Sensors to Monitor Aging in RF Circuits. Proceedings of the XXXIV Conference on Design of Circuits and Integrated Systems, Bilbao, Spain.","DOI":"10.1109\/DCIS201949030.2019.8959904"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"373","DOI":"10.1016\/j.sna.2017.06.022","article-title":"Differential temperature sensor with high sensitivity, wide dynamic range and digital offset calibration","volume":"263","author":"Vidal","year":"2017","journal-title":"Sens. Actuators A Phys."},{"key":"ref_39","unstructured":"Carusone, T.C., Johns, D., and Martin, K. (2011). Analog Integrated Circuit Design, John Wiley & Sons. [2nd ed.]."},{"key":"ref_40","doi-asserted-by":"crossref","unstructured":"Sarkar, S., and Banerjee, S. (2009, January 13\u201315). An 8-bit 1.8 V 500 MSPS CMOS Segmented Current Steering DAC. Proceedings of the IEEE Computer Society Annual Symposium on VLSI, Tampa, FL, USA.","DOI":"10.1109\/ISVLSI.2009.12"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/21\/4815\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:32:05Z","timestamp":1760189525000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/21\/4815"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11,5]]},"references-count":40,"journal-issue":{"issue":"21","published-online":{"date-parts":[[2019,11]]}},"alternative-id":["s19214815"],"URL":"https:\/\/doi.org\/10.3390\/s19214815","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,11,5]]}}}