{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,11]],"date-time":"2025-11-11T21:32:27Z","timestamp":1762896747722,"version":"build-2065373602"},"reference-count":15,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2019,12,16]],"date-time":"2019-12-16T00:00:00Z","timestamp":1576454400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The leakage current non-uniformity, as well as the leakage current random and discrete fluctuations sources, are investigated in pinned photodiode CMOS image sensor floating diffusions. Different bias configurations are studied to evaluate the electric field impacts on the FD leakage current. This study points out that high magnitude electric field regions could explain the high floating diffusion leakage current non-uniformity and its fluctuation with time called random telegraph signal. Experimental results are completed with TCAD simulations allowing us to further understand the role of the electric field in the FD leakage current and to locate a high magnitude electric field region in the overlap region between the floating diffusion implantation and the transfer gate spacer.<\/jats:p>","DOI":"10.3390\/s19245550","type":"journal-article","created":{"date-parts":[[2019,12,17]],"date-time":"2019-12-17T02:59:01Z","timestamp":1576551541000},"page":"5550","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage"],"prefix":"10.3390","volume":"19","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2579-800X","authenticated-orcid":false,"given":"Alexandre","family":"Le Roch","sequence":"first","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5024-0115","authenticated-orcid":false,"given":"Vincent","family":"Goiffon","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1829-3465","authenticated-orcid":false,"given":"Olivier","family":"Marcelot","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8701-7283","authenticated-orcid":false,"given":"Philippe","family":"Paillet","sequence":"additional","affiliation":[{"name":"CEA, DAM, DIF, F-91297 Arpajon, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9538-4232","authenticated-orcid":false,"given":"Federico","family":"Pace","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7323-456X","authenticated-orcid":false,"given":"Jean-Marc","family":"Belloir","sequence":"additional","affiliation":[{"name":"Centre Nationale d\u2019Etudes Spatiales (CNES), F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3122-7163","authenticated-orcid":false,"given":"Pierre","family":"Magnan","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9348-1565","authenticated-orcid":false,"given":"C\u00e9dric","family":"Virmontois","sequence":"additional","affiliation":[{"name":"Centre Nationale d\u2019Etudes Spatiales (CNES), F-31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,16]]},"reference":[{"key":"ref_1","unstructured":"Pain, B., Hancock, B., Sun, C., and Wrigley, C. 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Proceedings of the Image Sensor Workshop (IISW), Ogunquit, ME, USA."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"227","DOI":"10.1109\/JEDS.2019.2893299","article-title":"Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage due to X-ray Irradiation","volume":"7","author":"Chao","year":"2019","journal-title":"IEEE J. Electron Devices Soc."},{"key":"ref_6","first-page":"94","article-title":"Accurate estimation of conversion gain and quantum efficiency in CMOS imagers","volume":"Volume 5017","author":"Sampat","year":"2003","journal-title":"Sensors and Camera Systems for Scientific, Industrial and Digital Photography Applications: IV (Proceedings of SPIE)"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2132","DOI":"10.1109\/TNS.2009.2014759","article-title":"Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology","volume":"56","author":"Goiffon","year":"2009","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1109\/TNS.2016.2633333","article-title":"In-depth analysis on radiation induced multi-level dark current random telegraph signal in silicon solid state image sensors","volume":"64","author":"Durnez","year":"2017","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"1567","DOI":"10.1109\/23.273552","article-title":"Random telegraph signals from proton-irradiated CCDs","volume":"40","author":"Hopkins","year":"1993","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_10","unstructured":"Goiffon, V. (2015). Radiation effects on CMOS active pixel image sensors. Ionizing Radiation Effects in Electronics: From Memories to Imagers, CRC Press."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"616","DOI":"10.1109\/TNS.2019.2892645","article-title":"Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions","volume":"66","author":"Virmontois","year":"2019","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_12","unstructured":"Yamashita, H., Maeda, M., Furuya, S., and Yagami, T. (2009, January 26\u201328). Analysis of dark current in 4-transistor CMOS imager pixel with negative transfer-gate bias operation. Proceedings of the Image Sensor Workshop (IISW) 2009, Bergen, Norway."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"720","DOI":"10.1109\/16.22477","article-title":"The effects of gate field on the leakage characteristics of heavily doped junctions","volume":"36","author":"Noble","year":"1989","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"7409","DOI":"10.1063\/1.328731","article-title":"Electric field enhanced emission from non-Coulombic traps in semiconductors","volume":"52","author":"Martin","year":"1981","journal-title":"J. Appl. Phys."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"1513","DOI":"10.1109\/TNS.2002.1039695","article-title":"Enhanced dark current generation in proton-irradiated CMOS active pixel sensors","volume":"49","author":"Bogaerts","year":"2002","journal-title":"IEEE Trans. Nucl. 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