{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,2]],"date-time":"2026-06-02T23:46:36Z","timestamp":1780443996213,"version":"3.54.1"},"reference-count":12,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2019,12,17]],"date-time":"2019-12-17T00:00:00Z","timestamp":1576540800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with a 2.8-\u03bcm backside-illuminated (BSI) pixel with a lateral overflow integration capacitor (LOFIC) architecture is presented. The pixel was capable of a high conversion gain readout with 160 \u03bcV\/e\u2212 for low light signals while a large full-well capacity of 120 ke\u2212 was obtained for high light signals. The combination of LOFIC and the BSI technology allowed for high optical performance without degradation caused by extra devices for the LOFIC structure. The sensor realized a 70% peak quantum efficiency with a normal (no anti-reflection coating) cover glass and a 91% angular response at \u00b120\u00b0 incident light. This 2.8-\u03bcm pixel is potentially capable of higher than 100 dB dynamic range imaging in a pure single exposure operation.<\/jats:p>","DOI":"10.3390\/s19245572","type":"journal-article","created":{"date-parts":[[2019,12,20]],"date-time":"2019-12-20T03:19:36Z","timestamp":1576811976000},"page":"5572","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":26,"title":["A 120-ke\u2212 Full-Well Capacity 160-\u00b5V\/e\u2212 Conversion Gain 2.8-\u00b5m Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor"],"prefix":"10.3390","volume":"19","author":[{"given":"Isao","family":"Takayanagi","sequence":"first","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2732-7957","authenticated-orcid":false,"given":"Ken","family":"Miyauchi","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6422-3703","authenticated-orcid":false,"given":"Shunsuke","family":"Okura","sequence":"additional","affiliation":[{"name":"Department of Science and Engineering, Ritsumeikan University, 1-1-1, Nojihigashi, Kusatsu, Shiga 525-8577, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kazuya","family":"Mori","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junichi","family":"Nakamura","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shigetoshi","family":"Sugawa","sequence":"additional","affiliation":[{"name":"Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,17]]},"reference":[{"key":"ref_1","unstructured":"Takayanagi, I., Yoshimura, N., Mori, K., Tanaka, S., Matsuo, S., Abe, H., Yasuda, N., Ishikawa, K., Okura, S., and Ohsawa, S. (June, January 30). An 87 dB single exposure dynamic range CMOS image sensor with a 3.0 \u00b5m triple conversion gain pixel. Proceedings of the International Image Sensor Workshop, Hiroshima, Japan."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Takayanagi, I., Yoshimura, N., Mori, K., Matsuo, S., Tanaka, S., Abe, H., Yasuda, N., Ishikawa, K., Okura, S., and Ohsawa, S. (2018). An over 90 dB intra-scene single-exposure dynamic range CMOS image sensor using a 3.0 \u03bcm triple-gain pixel fabricated in a standard BSI process. Sensors, 18.","DOI":"10.3390\/s18010203"},{"key":"ref_3","unstructured":"Mori, K., Okura, S., Hasegawa, T., Tanaka, S., and Takayanagi, I. (2, January May). Back side illuminated high dynamic range 3.0 \u00b5m pixel featuring vertical p-n junction capacitance in a deep pinned photodiode. Proceedings of the International Image Sensor Workshop, Hiroshima, Japan."},{"key":"ref_4","first-page":"195","article-title":"Single exposure type wide dynamic range CMOS image sensor with enhanced NIR sensitivity","volume":"6","author":"Tanaka","year":"2018","journal-title":"ITE Trans. Media Technol. Appl."},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Sugawa, S., Akahane, N., Adachi, S., Mori, K., Ishiuchi, T., and Mizobuchi, K. (2005, January 10). A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor. Proceedings of the ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, San Francisco, CA, USA.","DOI":"10.1109\/JSSC.2006.870753"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"851","DOI":"10.1109\/JSSC.2006.870753","article-title":"A Sensitivity and Linearity Improvement of a 100 dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor","volume":"41","author":"Sugawa","year":"2006","journal-title":"IEEE J. Solid State Circuits"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"04DE03","DOI":"10.1143\/JJAP.49.04DE03","article-title":"Pixel scaling in complementary metal oxide silicon image sensor with lateral overflow integration capacitor","volume":"49","author":"Sakai","year":"2010","journal-title":"Jpn. J. Appl. Phys."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Sugo, H., Wakashima, S., Kuroda, R., Yamashita, Y., Sumi, H., Wang, T.J., Chou, P.S., Hsu, M.C., and Sugawa, S. (2016, January 15\u201317). A deadtime free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wise connections. Proceedings of the Symposium on VLSI Technology, Honolulu, HI, USA.","DOI":"10.1109\/VLSIC.2016.7573544"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Sakano, Y., Sakai, S., Tashiro, Y., Kato, Y., Akiyama, K., Honda, K., Sato, M., Sakakibara, M., Taura, T., and Azami, K. (2017, January 5\u20138). 224-ke saturation signal global shutter CMOS image sensor with In-pixel pinned storage and lateral overflow integration capacitor. Proceedings of the Symposium on VLSI Technology, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2017.8008498"},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Iida, S., Sakano, Y., Asatsuma, T., Takami, M., Yoshiba, I., Ohba, N., Mizuno, H., Oka, T., Yamaguchi, K., and Suzuki, A. (2018, January 1\u20135). A 0.68e-rms random-noise 121 dB dynamic-range sub-pixel architecture CMOS image sensor with LED flicker mitigation. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614565"},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Venezia, V.C., Hsiung, A.C.-W., Ai, K., Zhao, X., Lin, Z., Mao, D., Yazdani, A., Webster, E.A.G., and Grant, L.A. (2018, January 1\u20135). 1.5 \u00b5m dual conversion gain, backside illuminated image sensor using stacked pixel level connections with 13ke- full-well capacitance and 0.8e-noise. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614484"},{"key":"ref_12","unstructured":"Miyauchi, K., Okura, S., Mori, K., Takayanagi, I., Nakamura, J., and Sugawa, S. (2019, January 24\u201327). A high optical performance 2.8 \u00b5m BSI LOFIC pixel with 120ke\u2212 FWC and 160\u00b5V\/e\u2212 conversion gain. Proceedings of the International Image Sensor Workshop, Snowbird, UT, USA."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/24\/5572\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T13:42:58Z","timestamp":1760190178000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/19\/24\/5572"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,12,17]]},"references-count":12,"journal-issue":{"issue":"24","published-online":{"date-parts":[[2019,12]]}},"alternative-id":["s19245572"],"URL":"https:\/\/doi.org\/10.3390\/s19245572","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,12,17]]}}}