{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T03:53:10Z","timestamp":1760241190819,"version":"build-2065373602"},"reference-count":12,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2019,12,17]],"date-time":"2019-12-17T00:00:00Z","timestamp":1576540800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Silicon shows very high detection efficiency for low-energy photons, and the silicon pixel sensor provides high spatial resolution. Pixelated silicon sensors facilitate the direct detection of low-energy X-ray radiation. In this study, we developed junction field effect transistors (JFETs) that can be integrated into a pixelated silicon sensor to effectively handle many signal readout channels due to the pixelated structure without any change in the sensor resolution; this capability of the integrated system arises from the pixelated structure of the sensor. We focused on optimizing the JFET\u2019s switching function, and simulated JFETs with different fabrication parameters. Furthermore, prototype JFET switches were designed and fabricated on the basis of the simulated results. It is important not only to keep the low leakage currents in the JFET but also reduce the current flow as much as possible by providing a high resistance when the JFET switch is off. We determined the optimal fabrication conditions for the effective switching of the JFETs. In this paper, we present the results of the measurement of the switching capability of the fabricated JFETs for various design variables and fabrication conditions.<\/jats:p>","DOI":"10.3390\/s19245580","type":"journal-article","created":{"date-parts":[[2019,12,20]],"date-time":"2019-12-20T03:19:36Z","timestamp":1576811976000},"page":"5580","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Measurement of Switching Performance of Pixelated Silicon Sensor Integrated with Field Effect Transistor"],"prefix":"10.3390","volume":"19","author":[{"given":"Hyeyoung","family":"Lee","sequence":"first","affiliation":[{"name":"Center for Underground Physics (CUP), Institute for Basic Science (IBS), Daejeon 34126, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin-A","family":"Jeon","sequence":"additional","affiliation":[{"name":"Center for Underground Physics (CUP), Institute for Basic Science (IBS), Daejeon 34126, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinyong","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Physics, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hyunsu","family":"Lee","sequence":"additional","affiliation":[{"name":"Center for Underground Physics (CUP), Institute for Basic Science (IBS), Daejeon 34126, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4082-1677","authenticated-orcid":false,"given":"Moo Hyun","family":"Lee","sequence":"additional","affiliation":[{"name":"Center for Underground Physics (CUP), Institute for Basic Science (IBS), Daejeon 34126, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Manwoo","family":"Lee","sequence":"additional","affiliation":[{"name":"Dongnam Inst. of Radiological and Medical Sciences, Jwadong-gil 40, Jangan-eup, Gijang-gun, Busan 40633, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seungcheol","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Physics, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hwanbae","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Physics, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sukjune","family":"Song","sequence":"additional","affiliation":[{"name":"Department of Physics, Kyungpook National University, Daegu 41566, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,17]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Berger, M.J., and Hubbell, J.H. (1987). XCOM: Photon Cross Sections on a Personal Computer, Center for Radiation Research. NBSIR 87-3597.","DOI":"10.2172\/6016002"},{"key":"ref_2","unstructured":"(2018, July 11). X-Ray Mass Attenuation Coefficients, Available online: https:\/\/physics.nist.gov\/PhysRefData\/XrayMassCoef\/ElemTab\/z14.html."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1006","DOI":"10.1109\/TNS.2002.1039605","article-title":"Active pixel sensors on high-resistivity silicon and their readout","volume":"49","author":"Chen","year":"2002","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"85","DOI":"10.1049\/ip-cds:20020350","article-title":"Direct-conversion flat-panel X-ray image detectors","volume":"149","author":"Kasap","year":"2002","journal-title":"IEEE Proc. 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