{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T00:28:10Z","timestamp":1781742490441,"version":"3.54.5"},"reference-count":27,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2019,12,23]],"date-time":"2019-12-23T00:00:00Z","timestamp":1577059200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 \u00b5m silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 \u00b5m-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~\u22123.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.<\/jats:p>","DOI":"10.3390\/s20010116","type":"journal-article","created":{"date-parts":[[2019,12,24]],"date-time":"2019-12-24T05:56:15Z","timestamp":1577166975000},"page":"116","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":28,"title":["A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3693-473X","authenticated-orcid":false,"given":"Sanggwon","family":"Lee","sequence":"first","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Keita","family":"Yasutomi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Masato","family":"Morita","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hodaka","family":"Kawanishi","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shoji","family":"Kawahito","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"},{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,23]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Shcherbakova, O., Pancheri, L., Dalla Betta, G.-F., Massari, N., and Stoppa, D. 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