{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,16]],"date-time":"2026-04-16T09:38:04Z","timestamp":1776332284430,"version":"3.50.1"},"reference-count":35,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2019,12,24]],"date-time":"2019-12-24T00:00:00Z","timestamp":1577145600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61704111, 51872187, 11774241, 21805194 and 51371120"],"award-info":[{"award-number":["61704111, 51872187, 11774241, 21805194 and 51371120"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003453","name":"Natural Science Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2017A030310524"],"award-info":[{"award-number":["2017A030310524"]}],"id":[{"id":"10.13039\/501100003453","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology Foundation of Shenzhen","award":["JCYJ20170818143417082, JCYJ20170817100611468"],"award-info":[{"award-number":["JCYJ20170818143417082, JCYJ20170817100611468"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A high-performance solar-blind photodetector with a metal\u2013semiconductor\u2013metal structure was fabricated based on amorphous In-doped Ga2O3 thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A\/W) at 235 nm with a fast rise time (4.9 \u03bcs) and a rapid decay time (230 \u03bcs). The detection range was broadened compared with an individual Ga2O3 photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.<\/jats:p>","DOI":"10.3390\/s20010129","type":"journal-article","created":{"date-parts":[[2019,12,24]],"date-time":"2019-12-24T10:28:43Z","timestamp":1577183323000},"page":"129","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films"],"prefix":"10.3390","volume":"20","author":[{"given":"Mingzhi","family":"Fang","sequence":"first","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weiguo","family":"Zhao","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Feifei","family":"Li","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deliang","family":"Zhu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shun","family":"Han","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wangying","family":"Xu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenjun","family":"Liu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peijiang","family":"Cao","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ming","family":"Fang","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Youming","family":"Lu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2019,12,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1701687","DOI":"10.1002\/smll.201701687","article-title":"Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field","volume":"13","author":"Su","year":"2017","journal-title":"Small"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"10982","DOI":"10.1039\/C8TC04258F","article-title":"A self-powered solar-blind photodetector based on a MoS2\/\u03b2-Ga2O3 heterojunction","volume":"6","author":"Zhuo","year":"2018","journal-title":"J. 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