{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T00:31:58Z","timestamp":1760401918809,"version":"build-2065373602"},"reference-count":18,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2020,1,4]],"date-time":"2020-01-04T00:00:00Z","timestamp":1578096000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.<\/jats:p>","DOI":"10.3390\/s20010287","type":"journal-article","created":{"date-parts":[[2020,1,6]],"date-time":"2020-01-06T03:48:48Z","timestamp":1578282528000},"page":"287","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8219-1450","authenticated-orcid":false,"given":"C\u00e9lestin","family":"Doyen","sequence":"first","affiliation":[{"name":"STMicroelectonics, 850 rue Jean Monnet, 38920 Crolles, France"},{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, 10 Avenue Edouard Belin, 31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"St\u00e9phane","family":"Ricq","sequence":"additional","affiliation":[{"name":"STMicroelectonics, 850 rue Jean Monnet, 38920 Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pierre","family":"Magnan","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, 10 Avenue Edouard Belin, 31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Olivier","family":"Marcelot","sequence":"additional","affiliation":[{"name":"ISAE-SUPAERO, Universit\u00e9 de Toulouse, 10 Avenue Edouard Belin, 31055 Toulouse, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Marios","family":"Barlas","sequence":"additional","affiliation":[{"name":"STMicroelectonics, 850 rue Jean Monnet, 38920 Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S\u00e9bastien","family":"Place","sequence":"additional","affiliation":[{"name":"STMicroelectonics, 850 rue Jean Monnet, 38920 Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,1,4]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"040802","DOI":"10.1116\/1.4728205","article-title":"Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells","volume":"30","author":"Dingemans","year":"2012","journal-title":"J. Vac. Sci. Technol. A"},{"unstructured":"Oudot, E. (2018). Oxydes m\u00e9talliques pour la passivation de l\u2019interface Si\/SiO2 des capteurs d\u2019images CMOS. [Ph.D. Thesis, Universit\u00e9 Grenoble Alpes].","key":"ref_2"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"113703","DOI":"10.1063\/1.3021091","article-title":"On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3","volume":"104","author":"Hoex","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"29","DOI":"10.1016\/j.solmat.2015.05.027","article-title":"Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon","volume":"142","author":"Alcubilla","year":"2015","journal-title":"Sol. Energy Mater. Sol. Cells"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"093715","DOI":"10.1063\/1.3658246","article-title":"Controlling the fixed charge and passivation proporties of Si(100)\/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition","volume":"110","author":"Dingemans","year":"2011","journal-title":"J. Appl. Phys."},{"doi-asserted-by":"crossref","unstructured":"Wilson, M., Lagowski, J., Jastrzebski, L., Savtchouk, A., and Faifer, V. (2000, January 26\u201329). COCOS (corona oxide characterization of semiconductor) non-contact metrology for gate dielectrics. Proceedings of the AIP Conference Proceedings, Gaithersburg, MD, USA.","key":"ref_6","DOI":"10.1063\/1.1354401"},{"unstructured":"Tournier, A., Roy, F., Cazaux, Y., Lalanne, F., Malinge, P., Mcdonald, M., Monnot, G., and Roux, N. (2018, January 1\u20135). A HDR 98dB 3.2\u00b5m charge domain global shutter CMOS image sensor. Proceedings of the Electron Devices Meeting (IEDM), San Francisco, CA, USA.","key":"ref_7"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"297","DOI":"10.1109\/T-ED.1969.16744","article-title":"Charge pumping in MOS devices","volume":"16","author":"Brugler","year":"1969","journal-title":"IEEE Trans. Electron Devices"},{"doi-asserted-by":"crossref","unstructured":"Schroder, D.K. (2006). Semiconductor Material and Device Characterization, John Wiley & Sons. [3rd ed.].","key":"ref_9","DOI":"10.1002\/0471749095"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"241","DOI":"10.1016\/0038-1101(76)90169-6","article-title":"The use of charge pumping currents to measure surface state densities in MOS transistors","volume":"19","author":"Elliot","year":"1976","journal-title":"Solid-State Electron."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"42","DOI":"10.1109\/T-ED.1984.21472","article-title":"A reliable approach to charge-pumping measurements in MOS transistors","volume":"31","author":"Groeseneken","year":"1984","journal-title":"IEEE Trans. Electron Devices"},{"unstructured":"Masson, P. (1999). Etude par Pompage de Charge et par Mesures de Bruit Basse Fr\u00e9quence de Transistors MOS \u00e0 Oxynitrures de Grille Ultra-Minces. [Ph.D. Thesis, Institut National des Sciences Appliqu\u00e9es de Lyon].","key":"ref_12"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"517","DOI":"10.1109\/LED.2009.2017037","article-title":"Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors","volume":"30","author":"Lu","year":"2009","journal-title":"IEEE Electron Device Lett."},{"unstructured":"Degraeve, R., Kerber, A., Roussel, P., Cartier, E., Kauerauf, T., Pantisano, L., and Groeseneken, G. (2003, January 8\u201310). Effect of bulk trap density on HFO2 reliability and yield. Proceedings of the International Electron Devices Meeting, Washington, DC, USA.","key":"ref_14"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"335","DOI":"10.1016\/0038-1101(74)90125-7","article-title":"Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon","volume":"17","author":"Maserjian","year":"1974","journal-title":"Solid-State Electron."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"152","DOI":"10.1109\/66.843630","article-title":"Improved method fot the oxide thickness extraction in MOS structures with ultrathin gate dielectrics","volume":"Volume 13","author":"Ghibaudo","year":"2000","journal-title":"IEEE Transactions on Semiconductor Manufacturing"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"728","DOI":"10.1109\/LED.2002.805753","article-title":"Interfacial Defect States in HfO2 and ZrO2 nMOS Capacitors","volume":"Volume 23","author":"Mudanai","year":"2002","journal-title":"IEEE Electron Device Letters"},{"unstructured":"Soussou, A. (2014). Modeling and Characterization of Electrical Effects of Ge Integration in Metal\/High-k\/SiGe MOS Structures. [Ph.D. Thesis, Universit\u00e9 Grenoble Alpes].","key":"ref_18"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/1\/287\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T13:18:51Z","timestamp":1760361531000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/1\/287"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,1,4]]},"references-count":18,"journal-issue":{"issue":"1","published-online":{"date-parts":[[2020,1]]}},"alternative-id":["s20010287"],"URL":"https:\/\/doi.org\/10.3390\/s20010287","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2020,1,4]]}}}