{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T13:59:11Z","timestamp":1780322351277,"version":"3.54.1"},"reference-count":25,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2020,1,7]],"date-time":"2020-01-07T00:00:00Z","timestamp":1578355200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the National Key Research and Development Program of China","award":["No.2018YFF01012705 and No.2018YFF01010504"],"award-info":[{"award-number":["No.2018YFF01012705 and No.2018YFF01010504"]}]},{"name":"Project of Key Technology Research Group in Chinese Academy of Sciences","award":["No. GJJSTD20180004"],"award-info":[{"award-number":["No. GJJSTD20180004"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["No.61704165;No. 5172015004"],"award-info":[{"award-number":["No.61704165;No. 5172015004"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"the Science and Technology on Analog Integrated Circuit Laboratory Stability support project","award":["No.6142802WD201806"],"award-info":[{"award-number":["No.6142802WD201806"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 \u03bcm \u00d7 650 \u03bcm \u00d7 104 \u03bcm, and the size of a sensing membrane was of 100 \u03bcm \u00d7 100 \u03bcm \u00d7 2 \u03bcm. A higher sensitivity of 36 \u03bcV\/(V\u2219kPa) in the range of 0\u2013180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.<\/jats:p>","DOI":"10.3390\/s20020337","type":"journal-article","created":{"date-parts":[[2020,1,8]],"date-time":"2020-01-08T03:59:57Z","timestamp":1578455997000},"page":"337","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":42,"title":["A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology"],"prefix":"10.3390","volume":"20","author":[{"given":"Peishuai","family":"Song","sequence":"first","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chaowei","family":"Si","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingliang","family":"Zhang","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yongmei","family":"Zhao","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yurong","family":"He","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wen","family":"Liu","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0426-1358","authenticated-orcid":false,"given":"Xiaodong","family":"Wang","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"The School of Microelectronics &amp; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Beijing Academy of Quantum Information Science, Beijing 100193, China"},{"name":"Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2020,1,7]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1213","DOI":"10.1007\/s00542-014-2215-7","article-title":"Design principles and considerations for the \u2018ideal\u2019 silicon piezoresistive pressure sensor: A focused review","volume":"20","author":"Kumar","year":"2014","journal-title":"Microsyst. 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