{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,28]],"date-time":"2026-03-28T16:45:10Z","timestamp":1774716310369,"version":"3.50.1"},"reference-count":14,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2020,1,15]],"date-time":"2020-01-15T00:00:00Z","timestamp":1579046400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 \u03bcm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm\/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on the top substrate (the first layer). Each voltage signal from the first layer pixel is stored in the sample-and-hold capacitors on the bottom substrate (the second layer) via micro-bump interconnection to achieve a voltage domain GS function. The two sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation. As a result, an 80dB SEHDR GS operation without rolling shutter distortions and motion artifacts has been achieved. Additionally, less than \u2212140dB parasitic light sensitivity, small noise floor, high sensitivity and good angular response have been achieved.<\/jats:p>","DOI":"10.3390\/s20020486","type":"journal-article","created":{"date-parts":[[2020,1,17]],"date-time":"2020-01-17T04:14:41Z","timestamp":1579234481000},"page":"486","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 \u03bcm Multiple Gain Readout Pixel"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2732-7957","authenticated-orcid":false,"given":"Ken","family":"Miyauchi","sequence":"first","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Kazuya","family":"Mori","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Toshinori","family":"Otaka","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Toshiyuki","family":"Isozaki","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Naoto","family":"Yasuda","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Alex","family":"Tsai","sequence":"additional","affiliation":[{"name":"Brillnics Inc., Guangming 6th Rd., Zhubei City, Hsinchu County 302, Taiwan"}]},{"given":"Yusuke","family":"Sawai","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Hideki","family":"Owada","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Isao","family":"Takayanagi","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]},{"given":"Junichi","family":"Nakamura","sequence":"additional","affiliation":[{"name":"Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan"}]}],"member":"1968","published-online":{"date-parts":[[2020,1,15]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"740","DOI":"10.1109\/TED.2010.2095856","article-title":"A two-stage charge transfer active pixel CMOS image sensor with low-noise global shuttering and a dual-shuttering mode","volume":"58","author":"Yasutomi","year":"2011","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Sakakibara, M., Oike, Y., Takatsuka, T., Kato, A., Honda, K., Taura, T., Okuno, J., Machida, T., and Ando, A. (2012, January 19\u201323). An 83 dB-Dynamic-Range Single-Exposure Global-Shutter CMOS Image Sensor with in-Pixel Dual Storage. Proceedings of the 2012 IEEE International Solid-State Circuits Conference, San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2012.6177058"},{"key":"ref_3","unstructured":"Tournier, A., Roy, F., Cazaux, Y., Lalanne, F., Malinge, P., Mcdonald, M., Monnot, G., and Roux, N. (2018, January 1\u20135). A HDR 98 dB 3.2 \u03bcm Charge Domain Global Shutter CMOS Image Sensor. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Kumagai, Y., Yoshita, R., Osawa, N., Ikeda, H., Yamashita, K., Abe, T., Kudo, S., Yamane, J., and Idekoba, T. (2018, January 1\u20135). Back-Illuminated-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e-Saturation Signal. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614676"},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Yokoyama, T., Tsutsui, M., Nishi, Y., Mizuno, I., Dmitry, V., and Lahav, A. (2018, January 1\u20135). High Performance 2.5 \u00b5m Global Shutter Pixel with New Designed Light-Pipe Structure. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2018.8614569"},{"key":"ref_6","doi-asserted-by":"crossref","unstructured":"Kobayashi, M., Onuki, Y., Kawabata, K., Sekine, H., Tsuboi, T., Matsuno, Y., Takahashi, H., Koizumi, T., Sakurai, K., and Yuzurihara, H. (2017, January 5\u20139). 4.5A 1.8e-rms Temporal Noise Over 110 dB Dynamic Range 3.4 \u03bcm Pixel Pitch Global Shutter CMOS Image Sensor with Dual-Gain Amplifiers, SS-ADC and Multiple-Accumulation Shutter. Proceedings of the 2017 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2017.7870267"},{"key":"ref_7","unstructured":"Meynants, G., Beeckman, G., Ogiers, W., van Wichelen, K., and Bogaerts, J. (2013, January 7\u201311). Backside illuminated CMOS active pixel sensor with global shutter and 84 dB dynamic range. Proceedings of the Scientific Detector Workshop, Antwerp, Belgium."},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Kondo, T., Takemoto, Y., Kobayashi, K., Tsukimura, M., Takazawa, N., Kato, H., Suzuki, S., Aoki, J., Saito, H., and Gomi, Y. (2015, January 17\u201319). A 3D Stacked 16Mpixel Global-Shutter CMOS Image Sensor Using 4 Million Interconnections. Proceedings of the 2015 Symposium on VLSI Circuits (VLSI Circuits), Kyoto, Japan.","DOI":"10.3169\/mta.4.129"},{"key":"ref_9","first-page":"10","article-title":"A back-illuminated voltage-domain global shutter pixel with dual in-pixel storage","volume":"65","author":"Stark","year":"2017","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Sukegawa, S., Umebayashi, T., Nakajima, T., Kawanobe, H., Koseki, K., Hirota, I., Haruta, T., Kasai, M., Fukumoto, K., and Wakano, T. (2013, January 17\u201321). A 1\/4-inch 8Mpixel Back-Illuminated Stacked CMOS Image Sensor. Proceedings of the 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2013.6487825"},{"key":"ref_11","unstructured":"Mori, K., Otaka, T., Isozaki, T., Yasuda, N., Akutsu, T., Miyauchi, K., Tsai, A., Sawai, Y., Tanaka, S., and Takayanagi, I. (2019, January 23\u201327). Back Side Illuminated High Dynamic Range 4.0 \u03bcm Voltage Domain Global Shutter Pixel with Multiple Gain Readout. Proceedings of the 2019 International Image Sensor Workshop, Snowbird, UT, USA."},{"key":"ref_12","unstructured":"Solhusvik, J., Hu, S., Johansson, R., Lin, Z., Ma, S., Mabuchi, K., Manabe, S., Mao, D., Phan, B., and Rhodes, H. (June, January 30). A 1392 \u00d7 976 2.8 \u03bcm 120 dB CIS with per-pixel Controlled Conversion Gain. Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan."},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Takayanagi, I., Yoshimura, N., Mori, K., Matsuo, S., Tanaka, S., Abe, H., Yasuda, N., Ishikawa, K., Okura, S., and Ohsawa, S. (2018). An over 90 dB intra-scene single-exposure dynamic range CMOS image sensor using a 3.0 \u03bcm triple-gain pixel fabricated in a standard BSI process. Sensors, 18.","DOI":"10.3390\/s18010203"},{"key":"ref_14","unstructured":"Mori, K., Okura, S., Hasegawa, T., Tanaka, S., and Takayanagi, I. (June, January 30). Back Side Illuminated High Dynamic Range 3.0 \u03bcm Pixel Featuring Vertical p-n Junction Capacitance in a Deep Pinned Photodiode. Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/2\/486\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T13:19:47Z","timestamp":1760361587000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/2\/486"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,1,15]]},"references-count":14,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2020,1]]}},"alternative-id":["s20020486"],"URL":"https:\/\/doi.org\/10.3390\/s20020486","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,1,15]]}}}