{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,2]],"date-time":"2026-04-02T15:31:04Z","timestamp":1775143864239,"version":"3.50.1"},"reference-count":22,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2020,2,14]],"date-time":"2020-02-14T00:00:00Z","timestamp":1581638400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>An 8-tap CMOS lock-in pixel image sensor that has seven carrier-capturing and a draining time window was developed for short-pulse time-of-flight (TOF) measurements. The proposed pixel for the short-pulse TOF measurements has seven consecutive time-gating windows, each of which has the width of 6 ns, which is advantageous for high-resolution range imaging, particularly for relatively longer distances (&gt;5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depth-adaptive time-gating-number assignment (DATA) for the short-pulse TOF measurement is proposed. A prototype of the 8-tap CMOS lock-in pixel image sensor is implemented with a 1POLY 4METAL 0.11-\u03bcm CIS process. The maximum non-linearity error of 1.56%FS for the range of 1\u20136.4 m and the depth resolution of 6.4 mm was obtained at 6.2 m using the DATA technique.<\/jats:p>","DOI":"10.3390\/s20041040","type":"journal-article","created":{"date-parts":[[2020,2,20]],"date-time":"2020-02-20T03:20:03Z","timestamp":1582168803000},"page":"1040","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":38,"title":["An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4587-0005","authenticated-orcid":false,"given":"Yuya","family":"Shirakawa","sequence":"first","affiliation":[{"name":"Graduate School of Medical Photonics, Shizuoka University, Hamamatsu 432-8011, Japan"}]},{"given":"Keita","family":"Yasutomi","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan"}]},{"given":"Keiichiro","family":"Kagawa","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan"}]},{"given":"Satoshi","family":"Aoyama","sequence":"additional","affiliation":[{"name":"Brookman Technology, Inc., Hamamatsu 430-0936, Japan"}]},{"given":"Shoji","family":"Kawahito","sequence":"additional","affiliation":[{"name":"Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan"},{"name":"Brookman Technology, Inc., Hamamatsu 430-0936, Japan"}]}],"member":"1968","published-online":{"date-parts":[[2020,2,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1705","DOI":"10.1109\/3.406386","article-title":"The Lock-In CCD-Two-Dimensional Synchronous Detection of Light","volume":"31","author":"Spirig","year":"1995","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1643","DOI":"10.1109\/16.628816","article-title":"The multitap lock-In CCD with offset subtraction","volume":"44","author":"Spirig","year":"1997","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"390","DOI":"10.1109\/3.910448","article-title":"Solid-state time-of-flight range camera","volume":"37","author":"Lange","year":"2001","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"303","DOI":"10.1109\/JSSC.2014.2364270","article-title":"A 0.13 \u03bcm CMOS System-on-Chip for a 512 \u00d7 424 Time-of-Flight Image Sensor with Multi-Frequency Photo-Demodulation up to130 MHz and 2GS\/s ADC","volume":"50","author":"Bamji","year":"2015","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"248","DOI":"10.1109\/JSSC.2010.2085870","article-title":"A Range Image Sensor Based on 10-\u03bcm Lock-In Pixels in 0.18-\u03bcm CMOS Imaging Technology","volume":"46","author":"Stoppa","year":"2011","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_6","first-page":"248","article-title":"A CMOS Image Sensor Based on Unified Pixel Architecture with Time-Division Multiplexing Scheme for Color and Depth Image Acquisition","volume":"46","author":"Kim","year":"2011","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Bamji, C.S., Mehta, S., Thompson, B., Elkhatib, T., Wurster, S., Akkaya, O., Payne, A., Godbaz, J., Fenton, M., and Rajasekaran, V. (2018, January 11\u201315). IMpixel 65nm BSI 320MHz demodulated TOF image sensor with 3um global shutter pixels and analog binning. Proceedings of the 2018 IEEE International Solid\u2014State Circuits Conference\u2014(ISSCC), San Francisco, CA, USA.","DOI":"10.1109\/ISSCC.2018.8310200"},{"key":"ref_8","doi-asserted-by":"crossref","unstructured":"Kato, Y., Sano, T., Moriyama, Y., Maeda, S., Yamazaki, T., Nose, A., Shina, K., Yasu, Y., Tempel, W., and Ercan, A. (2017, January 5\u20138). 320 \u00d7 240 back-illuminated 10um CAPD pixels for high speed modulation Time-of-Flight CMOS image sensor. Proceedings of the 2017 Symposium on VLSI Circuits, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2017.8008511"},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Keel, M., Jin, Y., Kim, Y., Kim, D., Kim, Y., Bae, M., Chung, B., Son, S., Kim, H., and An, T. (2019, January 9\u201314). A 640 \u00d7 480 indirect time-of-flight CMOS image sensor with 4-tap 7\u03bcm global-shutter pixel and fixed-pattern phase noise self-compensation scheme. Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan.","DOI":"10.23919\/VLSIC.2019.8778090"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1578","DOI":"10.1109\/JSEN.2007.907561","article-title":"A CMOS Time-of-Flight Range Image Sensor with Gates-on-Field-Oxide Structure","volume":"7","author":"Kawahito","year":"2007","journal-title":"IEEE Sens. J."},{"key":"ref_11","unstructured":"Sawada, T., Kawahito, S., Nakayama, M., Ito, K., Halin, I.A., Homma, M., Ushinaga, T., and Maeda, Y. (2007, January 6\u201310). A TOF range image sensor with an ambient light charge drain and small duty-cycle light pulse. Proceedings of the 2007 International Image Sensor Workshop, Ogunquit, ME, USA."},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Spickermann, A., Durini, D., Suss, A., Ulfig, W., Brockherde, W., Hosticka, B.J., Schwope, S., and Grabmaier, A. (2011, January 12\u201316). CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixel. Proceedings of the 2011 Proceedings of the ESSCIRC (ESSCIRC), Helsinki, Finland.","DOI":"10.1109\/ESSCIRC.2011.6044927"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"267","DOI":"10.1109\/JEDS.2014.2382689","article-title":"A time-of-flight range image sensor with background cancelling lock-in pixel based on lateral electric field charge modulation","volume":"3","author":"Han","year":"2015","journal-title":"IEEE J. Electron Devices Soc."},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Lee, S., Yasutomi, K., Morita, M., Kawanishi, H., and Kawahito, S. (2020). A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Application. Sensors, 20.","DOI":"10.3390\/s20010116"},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Kondo, K., Yasutomi, K., Yamada, K., Komazawa, A., Handa, Y., Okura, Y., Michiba, T., Aoyama, S., and Kawahito, S. (2018, January 9\u201313). A Built-in Drift-field PD Based 4-tap Lock-in Pixel for Time-of-Flight CMOS Range Image Sensors. Proceedings of the Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan.","DOI":"10.7567\/SSDM.2018.J-7-03"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"421","DOI":"10.1541\/ieejsmas.129.421","article-title":"A range-shift technique for TOF range image sensor","volume":"129","author":"Sawada","year":"2009","journal-title":"IEEJ Trans. Sens. Micromachines"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Shirakawa, Y., Seo, M.W., Yasutomi, K., Kagawa, K., Teranishi, N., and Kawahito, S. (2017). Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging. Silicon Photonics XII, SPIE.","DOI":"10.1117\/12.2251788"},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Shirakawa, Y., Yasutomi, K., Kagawa, K., Aoyama, S., and Kawahito, S. (2019, January 23\u201327). An 8-tap CMOS Lock-in Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements. Proceedings of the International Image Sensor Workshop (IISW2019), Snowbird, UT, USA.","DOI":"10.3390\/s20041040"},{"key":"ref_19","unstructured":"Kawahito, S., Baek, G., Li, Z., Han, S.M., Seo, M.W., Yasutomi, K., and Kagawa, K. (2013, January 12\u201316). CMOS lock-in pixel image sensors with lateral electric field control for time-resolved imaging. Proceedings of the International Image Sensor Workshop (IISW), Snowbird, UT, USA."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1109\/JSSC.2015.2496788","article-title":"A 10 ps Time-resolution CMOS image sensor with two-tap true-CDS lock-in pixels for fluorescence lifetime imaging","volume":"51","author":"Seo","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2319","DOI":"10.1109\/JSSC.2018.2827918","article-title":"A time-resolved four-tap lock-in pixel CMOS image sensor for real-time fluorescence lifetime imaging microscopy","volume":"53","author":"Seo","year":"2018","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"272","DOI":"10.1109\/JSSC.2011.2164298","article-title":"A low-noise high intrascene dynamic range CMOS image sensor with a 13 to 19b variable-resolution column-parallel folding-integration\/cyclic ADC","volume":"47","author":"Seo","year":"2012","journal-title":"IEEE J. Solid-State Circuits"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/4\/1040\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T08:57:59Z","timestamp":1760173079000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/4\/1040"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,2,14]]},"references-count":22,"journal-issue":{"issue":"4","published-online":{"date-parts":[[2020,2]]}},"alternative-id":["s20041040"],"URL":"https:\/\/doi.org\/10.3390\/s20041040","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,2,14]]}}}