{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,4]],"date-time":"2026-05-04T18:22:28Z","timestamp":1777918948898,"version":"3.51.4"},"reference-count":22,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2020,3,24]],"date-time":"2020-03-24T00:00:00Z","timestamp":1585008000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 \u00b0C to 220 \u00b0C with a TCF of \u221214.4 ppm\/\u00b0C. Such a TCF is only about half of that of previously reported works.<\/jats:p>","DOI":"10.3390\/s20061788","type":"journal-article","created":{"date-parts":[[2020,3,24]],"date-time":"2020-03-24T07:16:08Z","timestamp":1585034168000},"page":"1788","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":19,"title":["A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing"],"prefix":"10.3390","volume":"20","author":[{"given":"Tao","family":"Wang","sequence":"first","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"},{"name":"Shanghai Industrial \u03bcTechnology Research Institute, No. 235, Chengbei Road, Jiading District, Shanghai 201800, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhengjie","family":"Tang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"},{"name":"Shanghai Industrial \u03bcTechnology Research Institute, No. 235, Chengbei Road, Jiading District, Shanghai 201800, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Huamao","family":"Lin","sequence":"additional","affiliation":[{"name":"Shanghai Industrial \u03bcTechnology Research Institute, No. 235, Chengbei Road, Jiading District, Shanghai 201800, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kun","family":"Zhan","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiang","family":"Wan","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shihao","family":"Wu","sequence":"additional","affiliation":[{"name":"Shanghai Industrial \u03bcTechnology Research Institute, No. 235, Chengbei Road, Jiading District, Shanghai 201800, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuandong","family":"Gu","sequence":"additional","affiliation":[{"name":"Shanghai Industrial \u03bcTechnology Research Institute, No. 235, Chengbei Road, Jiading District, Shanghai 201800, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenbo","family":"Luo","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wanli","family":"Zhang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China, School of Electronic Science and Engineering, Xiyuan Avenue, Chengdu 611731, China"},{"name":"University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,3,24]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"921","DOI":"10.1121\/1.1910447","article-title":"Analysis of the Excitation and Detection of Piezoelectric Surface Waves in Quartz by Means of Surface Electrodes","volume":"41","author":"Coquin","year":"1967","journal-title":"J. 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