{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T02:49:38Z","timestamp":1760237378777,"version":"build-2065373602"},"reference-count":26,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2020,5,12]],"date-time":"2020-05-12T00:00:00Z","timestamp":1589241600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the Youth Innovation Promotion Association CAS","award":["2014101"],"award-info":[{"award-number":["2014101"]}]},{"name":"the Key R&amp;D Plan of Guangdong Province","award":["2019B010145001"],"award-info":[{"award-number":["2019B010145001"]}]},{"DOI":"10.13039\/501100001809","name":"the National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61634008","61704188"],"award-info":[{"award-number":["61634008","61704188"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport model, the performances of the Hall voltage, sensitivity, efficiency, offset voltage, and temperature characteristics are evaluated. The optimal structure of the sensor in the simulation has a sensitivity of 86.5 mV\/T and an efficiency of 218.9 V\/WT at the bias voltage of 5 V. In addition, the effects of bias, such as the gate voltage and substrate voltage, on performance are also simulated and analyzed. Optimal structure and bias design rules are proposed, as are some adjustable trade-offs that can be chosen by designers to meet their own Hall sensor requirements.<\/jats:p>","DOI":"10.3390\/s20102751","type":"journal-article","created":{"date-parts":[[2020,5,12]],"date-time":"2020-05-12T10:53:55Z","timestamp":1589280835000},"page":"2751","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations"],"prefix":"10.3390","volume":"20","author":[{"given":"Linjie","family":"Fan","sequence":"first","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinshun","family":"Bi","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai","family":"Xi","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sandip","family":"Majumdar","sequence":"additional","affiliation":[{"name":"Department of Physics, Serampore Girls\u2019 College, Hooghly 712201, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,5,12]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1207","DOI":"10.1038\/srep01207","article-title":"Batch-fabricated high-performance graphene Hall elements","volume":"3","author":"Xu","year":"2013","journal-title":"Sci. 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