{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,26]],"date-time":"2025-12-26T22:24:48Z","timestamp":1766787888766,"version":"build-2065373602"},"reference-count":28,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2020,5,25]],"date-time":"2020-05-25T00:00:00Z","timestamp":1590364800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We present an analysis of carrier dynamics of the single-photon detection process, i.e., from Geiger mode pulse generation to its quenching, in a single-photon avalanche diode (SPAD). The device is modeled by a parallel circuit of a SPAD and a capacitance representing both space charge accumulation inside the SPAD and parasitic components. The carrier dynamics inside the SPAD is described by time-dependent bipolar-coupled continuity equations (BCE). Numerical solutions of BCE show that the entire process completes within a few hundreds of picoseconds. More importantly, we find that the total amount of charges stored on the series capacitance gives rise to a voltage swing of the internal bias of SPAD twice of the excess bias voltage with respect to the breakdown voltage. This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. Such operation is demonstrated by experiments with a 6 \u00b5m size 400 \u00d7 400 pixels SPAD-based CIS designed with this methodology.<\/jats:p>","DOI":"10.3390\/s20103007","type":"journal-article","created":{"date-parts":[[2020,5,26]],"date-time":"2020-05-26T03:29:10Z","timestamp":1590463750000},"page":"3007","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":13,"title":["Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor"],"prefix":"10.3390","volume":"20","author":[{"given":"Akito","family":"Inoue","sequence":"first","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Toru","family":"Okino","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shinzo","family":"Koyama","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yutaka","family":"Hirose","sequence":"additional","affiliation":[{"name":"Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,5,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"408","DOI":"10.1063\/1.1136594","article-title":"Toward picosecond resolution with single-photon avalanche diodes","volume":"52","author":"Cova","year":"1981","journal-title":"Rev. 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