{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,15]],"date-time":"2025-12-15T14:09:51Z","timestamp":1765807791655,"version":"build-2065373602"},"reference-count":38,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2020,6,11]],"date-time":"2020-06-11T00:00:00Z","timestamp":1591833600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000780","name":"European Commission","doi-asserted-by":"publisher","award":["857558"],"award-info":[{"award-number":["857558"]}],"id":[{"id":"10.13039\/501100000780","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.<\/jats:p>","DOI":"10.3390\/s20113329","type":"journal-article","created":{"date-parts":[[2020,6,15]],"date-time":"2020-06-15T05:56:27Z","timestamp":1592200587000},"page":"3329","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-1721-9039","authenticated-orcid":false,"given":"Stefan","family":"Ili\u0107","sequence":"first","affiliation":[{"name":"Applied Physics Laboratory, Faculty of Electronic Engineering, University of Ni\u0161, 18000 Ni\u0161, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7122-0324","authenticated-orcid":false,"given":"Aleksandar","family":"Jevti\u0107","sequence":"additional","affiliation":[{"name":"Applied Physics Laboratory, Faculty of Electronic Engineering, University of Ni\u0161, 18000 Ni\u0161, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Srboljub","family":"Stankovi\u0107","sequence":"additional","affiliation":[{"name":"Department of Radiation and Environmental Protection, \u201cVin\u010da\u201d Institute of Nuclear Sciences, 11351 Belgrade, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Goran","family":"Risti\u0107","sequence":"additional","affiliation":[{"name":"Applied Physics Laboratory, Faculty of Electronic Engineering, University of Ni\u0161, 18000 Ni\u0161, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2020,6,11]]},"reference":[{"key":"ref_1","first-page":"580","article-title":"Silicon PIN diode array hybrids for charged particle detection","volume":"A275","author":"Shapiro","year":"1988","journal-title":"Nucl. 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