{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T03:06:50Z","timestamp":1760238410868,"version":"build-2065373602"},"reference-count":25,"publisher":"MDPI AG","issue":"16","license":[{"start":{"date-parts":[[2020,8,6]],"date-time":"2020-08-06T00:00:00Z","timestamp":1596672000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>High detection efficiency appears to be associated with a high afterpulse probability for InP-based single-photon avalanche diodes. In this paper, we present a new hybrid quenching technique that combines the advantages of both fast active quenching and high-frequency gated-passive quenching, with the aim of suppressing higher-order afterpulsing effects. Our results showed that the hybrid quenching method contributed to a 10% to 85% reduction of afterpulses with a gate-free detection efficiency of 4% to 10% at 1.06 \u03bcm, with 40 ns dead time, compared with the counter-based hold-off method. With the improvement of the afterpulsing performance of high-frequency gated single-photon detectors, especially at relatively high average detection efficiencies with wide gate widths, the proposed method enables their use as high-performance free-running detectors.<\/jats:p>","DOI":"10.3390\/s20164384","type":"journal-article","created":{"date-parts":[[2020,8,6]],"date-time":"2020-08-06T09:41:21Z","timestamp":1596706881000},"page":"4384","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7204-3646","authenticated-orcid":false,"given":"Junliang","family":"Liu","sequence":"first","affiliation":[{"name":"School of Information Science and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China"},{"name":"Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]},{"given":"Yining","family":"Xu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]},{"given":"Zheng","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Information Science and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5164-4055","authenticated-orcid":false,"given":"Yongfu","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China"},{"name":"Center for Optics Research and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]},{"given":"Yi","family":"Gu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Infrared Detection and Imaging Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China"}]},{"given":"Zhaojun","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Information Science and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China"},{"name":"Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]},{"given":"Xian","family":"Zhao","sequence":"additional","affiliation":[{"name":"Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology, Shandong University, 72 Binhai Road, Qingdao 266237, China"},{"name":"Center for Optics Research and Engineering, Shandong University, 72 Binhai Road, Qingdao 266237, China"}]}],"member":"1968","published-online":{"date-parts":[[2020,8,6]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"201104","DOI":"10.1063\/1.2931070","article-title":"Gigahertz quantum key distribution with InGaAs avalanche photodiodes","volume":"92","author":"Yuan","year":"2008","journal-title":"Appl. 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