{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,30]],"date-time":"2026-04-30T15:08:05Z","timestamp":1777561685532,"version":"3.51.4"},"reference-count":43,"publisher":"MDPI AG","issue":"24","license":[{"start":{"date-parts":[[2020,12,21]],"date-time":"2020-12-21T00:00:00Z","timestamp":1608508800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["NRF-2018R1A2A3074921"],"award-info":[{"award-number":["NRF-2018R1A2A3074921"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS2\/p-Si heterojunction structure by sulfurization of MoOx film, which is thermally evaporated on p-type silicon substrate. The n-MoS2\/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 104. Photoresponsivity and detectivity of the diode showed up to 475 mA\/W and 6.5 \u00d7 1011 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS2 can be applicable to next-generation electronic and optoelectronic devices.<\/jats:p>","DOI":"10.3390\/s20247340","type":"journal-article","created":{"date-parts":[[2020,12,21]],"date-time":"2020-12-21T09:41:41Z","timestamp":1608543701000},"page":"7340","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":16,"title":["Photoelectric Characteristics of a Large-Area n-MoS2\/p-Si Heterojunction Structure Formed through Sulfurization Process"],"prefix":"10.3390","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4736-5758","authenticated-orcid":false,"given":"Yoonsok","family":"Kim","sequence":"first","affiliation":[{"name":"Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea"}]},{"given":"Taeyoung","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3373-963X","authenticated-orcid":false,"given":"Eun Kyu","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea"}]}],"member":"1968","published-online":{"date-parts":[[2020,12,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"183","DOI":"10.1038\/nmat1849","article-title":"The rise of graphene","volume":"6","author":"Geim","year":"2010","journal-title":"Nat. Mater."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"252104","DOI":"10.1063\/1.3276068","article-title":"Bandgap engineering of graphene: A density functional theory study","volume":"95","author":"Liu","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"654","DOI":"10.1038\/nnano.2008.268","article-title":"Current saturation in zero-bandgap, top-gated graphene field-effect transistors","volume":"3","author":"Meric","year":"2008","journal-title":"Nat. Nanotechnol."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"3301","DOI":"10.1063\/1.1723695","article-title":"High-mobility field-effect transistors based on transition metal dichalcogenides","volume":"84","author":"Podzorov","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"8146","DOI":"10.1021\/acsnano.9b03250","article-title":"End-bonded metal contacts on WSe2 field-effect transistors","volume":"13","author":"Chu","year":"2019","journal-title":"ACS Nano"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"01A118","DOI":"10.1116\/1.4974220","article-title":"Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric","volume":"35","author":"Zhao","year":"2017","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"223104","DOI":"10.1063\/1.4768218","article-title":"Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers","volume":"101","author":"Larentis","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"4928","DOI":"10.1021\/acs.nanolett.5b00668","article-title":"High-performance WSe2 complementary metal oxide semiconductor technology and integrated circuits","volume":"15","author":"Yu","year":"2015","journal-title":"Nano Lett."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"4948","DOI":"10.1021\/nn5009929","article-title":"High-gain inverters based on WSe2 complementary field-effect transistors","volume":"8","author":"Tosun","year":"2014","journal-title":"ACS Nano"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1701798","DOI":"10.1002\/adma.201701798","article-title":"Homogeneous 2D MoTe2 p\u2013n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping","volume":"29","author":"Lim","year":"2017","journal-title":"Adv. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"4674","DOI":"10.1021\/nl302015v","article-title":"Integrated circuits based on bilayer MoS2 transistors","volume":"12","author":"Wang","year":"2012","journal-title":"Nano Lett."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"5590","DOI":"10.1021\/nl502075n","article-title":"Electroluminescence and photocurrent generation from atomically sharp WSe2\/MoS2 heterojunction p\u2013n diodes","volume":"14","author":"Cheng","year":"2014","journal-title":"Nano Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"8292","DOI":"10.1021\/nn5027388","article-title":"Black phosphorus\u2013monolayer MoS2 van der Waals heterojunction p\u2013n diode","volume":"8","author":"Deng","year":"2014","journal-title":"ACS Nano"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1900349","DOI":"10.1002\/pssa.201900349","article-title":"Influence of MoS2-Silicon Interface States on Spectral Photoresponse Characteristics","volume":"216","author":"Desai","year":"2019","journal-title":"Phys. Status Solidi"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"1337","DOI":"10.1021\/nl4043505","article-title":"MoS2 p-type transistors and diodes enabled by high work function MoOx contacts","volume":"14","author":"Chuang","year":"2014","journal-title":"Nano Lett."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1703293","DOI":"10.1002\/smll.201703293","article-title":"High-performance photovoltaic detector based on MoTe2\/MoS2 van der Waals heterostructure","volume":"14","author":"Chen","year":"2018","journal-title":"Small"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"121101","DOI":"10.1063\/1.5085763","article-title":"Self-powered room temperature broadband infrared photodetector based on MoSe2\/germanium heterojunction with 35 A\/W responsivity at 1550 nm","volume":"114","author":"Dhyani","year":"2019","journal-title":"Appl. Phys. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"6575","DOI":"10.1002\/adma.201503340","article-title":"Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics","volume":"27","author":"Wang","year":"2015","journal-title":"Adv. Mater."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"3246","DOI":"10.1021\/nn3059136","article-title":"Nonvolatile memory cells based on MoS2\/graphene heterostructures","volume":"7","author":"Bertolazzi","year":"2013","journal-title":"ACS Nano"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"199","DOI":"10.1038\/nmat4135","article-title":"Layered memristive and memcapacitive switches for printable electronics","volume":"14","author":"Bessonov","year":"2015","journal-title":"Nat. Mater."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/ncomms12725","article-title":"Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on\/off ratio","volume":"7","author":"Vu","year":"2016","journal-title":"Nat. Commun."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"7931","DOI":"10.1021\/nn402954e","article-title":"Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures","volume":"7","author":"Lee","year":"2013","journal-title":"ACS Nano"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"225501","DOI":"10.1088\/0957-4484\/27\/22\/225501","article-title":"Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices","volume":"27","author":"Zheng","year":"2016","journal-title":"Nanotechnology"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"06FG01","DOI":"10.1116\/1.4930040","article-title":"Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors","volume":"33","author":"Nam","year":"2015","journal-title":"J. Vac. Sci. Technol."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"3196","DOI":"10.1021\/acsnano.8b08778","article-title":"MoS2-based optoelectronic gas sensor with sub-parts-per-billion limit of NO2 gas detection","volume":"13","author":"Pham","year":"2019","journal-title":"ACS Nano"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"1271","DOI":"10.1021\/nl903868w","article-title":"Emerging photoluminescence in monolayer MoS2","volume":"10","author":"Splendiani","year":"2010","journal-title":"Nano Lett."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"042104","DOI":"10.1063\/1.4789365","article-title":"High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects","volume":"102","author":"Bao","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"142106","DOI":"10.1063\/1.4801861","article-title":"High mobility and high on\/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains","volume":"102","author":"Wu","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"163102","DOI":"10.1063\/1.5042440","article-title":"2D WSe2\/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection","volume":"113","author":"Lee","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"9332","DOI":"10.1021\/nn503284n","article-title":"Lateral MoS2 p\u2013n junction formed by chemical doping for use in high-performance optoelectronics","volume":"8","author":"Choi","year":"2014","journal-title":"ACS Nano"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"5832","DOI":"10.1002\/adma.201201909","article-title":"High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared","volume":"24","author":"Choi","year":"2012","journal-title":"Adv. Mater."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"124505","DOI":"10.1063\/1.4994740","article-title":"High photoresponsivity from multilayer MoS2\/Si heterojunction diodes formed by vertically stacking","volume":"122","author":"Song","year":"2017","journal-title":"J. Appl. Phys."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"233106","DOI":"10.1063\/1.5030537","article-title":"Hybrid 2D\/3D MoS2\/GaN heterostructures for dual functional photoresponse","volume":"112","author":"Huang","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"7626","DOI":"10.1021\/acsami.8b21629","article-title":"Si\u2013MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power","volume":"11","author":"Shin","year":"2019","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"967","DOI":"10.1021\/nl404389u","article-title":"Hole selective MoOx contact for silicon solar cells","volume":"14","author":"Battaglia","year":"2014","journal-title":"Nano Lett."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"1385","DOI":"10.1002\/adfm.201102111","article-title":"From bulk to monolayer MoS2: Evolution of Raman scattering","volume":"22","author":"Li","year":"2012","journal-title":"Adv. Funct. Mater."},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"2910","DOI":"10.1002\/adfm.201500216","article-title":"MoS2\/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible\u2013near infrared photodetectors","volume":"25","author":"Wang","year":"2015","journal-title":"Adv. Funct. Mater."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"1062","DOI":"10.1002\/smll.201502923","article-title":"In Situ Fabrication of Vertical Multilayered MoS2\/Si Homotype Heterojunction for High-Speed Visible\u2013Near-Infrared Photodetectors","volume":"12","author":"Zhang","year":"2016","journal-title":"Small"},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"1314","DOI":"10.1021\/acsaelm.9b00247","article-title":"Amorphous MoS2 Photodetector with Ultra-Broadband Response","volume":"1","author":"Huang","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"9362","DOI":"10.1021\/am4026505","article-title":"Monolayer graphene\/germanium Schottky junction as high-performance self-driven infrared light photodetector","volume":"5","author":"Zeng","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/ncomms7293","article-title":"Exploring atomic defects in molybdenum disulphide monolayers","volume":"6","author":"Hong","year":"2015","journal-title":"Nat. Commun."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"3497","DOI":"10.1007\/s11664-018-6191-z","article-title":"Low-carrier-density sputtered MoS2 film by vapor-phase sulfurization","volume":"47","author":"Matsuura","year":"2018","journal-title":"J. Electron. Mater."},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/srep02657","article-title":"Defects activated photoluminescence in two-dimensional semiconductors: Interplay between bound, charged and free excitons","volume":"3","author":"Tongay","year":"2013","journal-title":"Sci. Rep."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/24\/7340\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T10:47:53Z","timestamp":1760179673000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/20\/24\/7340"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,12,21]]},"references-count":43,"journal-issue":{"issue":"24","published-online":{"date-parts":[[2020,12]]}},"alternative-id":["s20247340"],"URL":"https:\/\/doi.org\/10.3390\/s20247340","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,12,21]]}}}