{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,18]],"date-time":"2026-03-18T14:12:35Z","timestamp":1773843155115,"version":"3.50.1"},"reference-count":56,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2021,1,31]],"date-time":"2021-01-31T00:00:00Z","timestamp":1612051200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100006595","name":"Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii","doi-asserted-by":"publisher","award":["PN-III-P2-2.1-PED-2019 Romanian Project under Contract SiC-HITs 275PED\/2020"],"award-info":[{"award-number":["PN-III-P2-2.1-PED-2019 Romanian Project under Contract SiC-HITs 275PED\/2020"]}],"id":[{"id":"10.13039\/501100006595","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006595","name":"Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii","doi-asserted-by":"publisher","award":["Project PN-III-P1-1.1-PD-2019-0924 - SiC MOS"],"award-info":[{"award-number":["Project PN-III-P1-1.1-PD-2019-0924 - SiC MOS"]}],"id":[{"id":"10.13039\/501100006595","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Operational Programme Human Capital of the Ministry of European Funds.","award":["51675\/09.07.2019, SMIS Code 125125"],"award-info":[{"award-number":["51675\/09.07.2019, SMIS Code 125125"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60\u2013700 K, currently the widest range reported. The structure\u2019s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 \u00b0C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60\u2013700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV\/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV\/K, without influencing linearity.<\/jats:p>","DOI":"10.3390\/s21030942","type":"journal-article","created":{"date-parts":[[2021,1,31]],"date-time":"2021-01-31T21:31:56Z","timestamp":1612128716000},"page":"942","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["60\u2013700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes"],"prefix":"10.3390","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3170-9752","authenticated-orcid":false,"given":"Razvan","family":"Pascu","sequence":"first","affiliation":[{"name":"National Institute for Research and Development in Microtechnologies\u2014IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, Romania"},{"name":"Faculty of Electronics, Telecommunications and Information Technology, University \u201cPolitehnica\u201d of Bucharest, 060042 Bucharest, Romania"},{"name":"Romanian Young Academy, Research Institute of the University of Bucharest, University of Bucharest, 030018 Bucharest, Romania"}]},{"given":"Gheorghe","family":"Pristavu","sequence":"additional","affiliation":[{"name":"Faculty of Electronics, Telecommunications and Information Technology, University \u201cPolitehnica\u201d of Bucharest, 060042 Bucharest, Romania"}]},{"given":"Gheorghe","family":"Brezeanu","sequence":"additional","affiliation":[{"name":"Faculty of Electronics, Telecommunications and Information Technology, University \u201cPolitehnica\u201d of Bucharest, 060042 Bucharest, Romania"}]},{"given":"Florin","family":"Draghici","sequence":"additional","affiliation":[{"name":"Faculty of Electronics, Telecommunications and Information Technology, University \u201cPolitehnica\u201d of Bucharest, 060042 Bucharest, Romania"}]},{"given":"Philippe","family":"Godignon","sequence":"additional","affiliation":[{"name":"Centre Nacional de Microelectr\u00f2nica, CNM-CSIC, 08193 Barcelona, Spain"}]},{"given":"Cosmin","family":"Romanitan","sequence":"additional","affiliation":[{"name":"National Institute for Research and Development in Microtechnologies\u2014IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, Romania"}]},{"given":"Matei","family":"Serbanescu","sequence":"additional","affiliation":[{"name":"Faculty of Electronics, Telecommunications and Information Technology, University \u201cPolitehnica\u201d of Bucharest, 060042 Bucharest, Romania"}]},{"given":"Adrian","family":"Tulbure","sequence":"additional","affiliation":[{"name":"Department of Informatics, Mathematics and Electronics, Faculty of Exact Sciences and Engineering, University \u201c1 Decembrie 1918\u201d of Alba Iulia, No. 5, Gabriel Bethlen Street, 510009 Alba Iulia, Romania"}]}],"member":"1968","published-online":{"date-parts":[[2021,1,31]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Madhusoodhanan, S., Koukourinkova, S., White, T., Chen, Z., Zhao, Y., and Ware, M.E. 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