{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T06:10:13Z","timestamp":1760163013268,"version":"build-2065373602"},"reference-count":47,"publisher":"MDPI AG","issue":"6","license":[{"start":{"date-parts":[[2021,3,11]],"date-time":"2021-03-11T00:00:00Z","timestamp":1615420800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100013168","name":"Istituto Nazionale di Fisica Nucleare","doi-asserted-by":"publisher","award":["ARCADIA"],"award-info":[{"award-number":["ARCADIA"]}],"id":[{"id":"10.13039\/501100013168","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006692","name":"Universit\u00e0 degli Studi di Torino","doi-asserted-by":"publisher","award":["Dipartimento di Fisica - Dipartimento di Eccellenza"],"award-info":[{"award-number":["Dipartimento di Fisica - Dipartimento di Eccellenza"]}],"id":[{"id":"10.13039\/501100006692","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The paper presents the simulation studies of 10 \u03bc\u03bcm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 \u03bc\u03bcm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&amp;D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.<\/jats:p>","DOI":"10.3390\/s21061990","type":"journal-article","created":{"date-parts":[[2021,3,11]],"date-time":"2021-03-11T20:17:40Z","timestamp":1615493860000},"page":"1990","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept"],"prefix":"10.3390","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5986-3842","authenticated-orcid":false,"given":"Lorenzo","family":"De Cilladi","sequence":"first","affiliation":[{"name":"Dipartimento di Fisica, Universit\u00e0 degli Studi di Torino, 10125 Torino, Italy"},{"name":"Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Torino, 10125 Torino, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0236-6834","authenticated-orcid":false,"given":"Thomas","family":"Corradino","sequence":"additional","affiliation":[{"name":"Dipartimento di Ingegneria Industriale, Universit\u00e0 degli Studi di Trento, 38123 Trento, Italy"},{"name":"Trento Institute for Fundamental Physics and Applications\u2014Istituto Nazionale di Fisica Nucleare (TIFPA-INFN), 38123 Trento, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5516-9282","authenticated-orcid":false,"given":"Gian-Franco","family":"Dalla Betta","sequence":"additional","affiliation":[{"name":"Dipartimento di Ingegneria Industriale, Universit\u00e0 degli Studi di Trento, 38123 Trento, Italy"},{"name":"Trento Institute for Fundamental Physics and Applications\u2014Istituto Nazionale di Fisica Nucleare (TIFPA-INFN), 38123 Trento, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2008-8404","authenticated-orcid":false,"given":"Coralie","family":"Neub\u00fcser","sequence":"additional","affiliation":[{"name":"Trento Institute for Fundamental Physics and Applications\u2014Istituto Nazionale di Fisica Nucleare (TIFPA-INFN), 38123 Trento, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3954-7308","authenticated-orcid":false,"given":"Lucio","family":"Pancheri","sequence":"additional","affiliation":[{"name":"Dipartimento di Ingegneria Industriale, Universit\u00e0 degli Studi di Trento, 38123 Trento, Italy"},{"name":"Trento Institute for Fundamental Physics and Applications\u2014Istituto Nazionale di Fisica Nucleare (TIFPA-INFN), 38123 Trento, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,3,11]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"66101","DOI":"10.1088\/1361-6633\/aab064","article-title":"A review of advances in pixel detectors for experiments with high rate and radiation","volume":"81","author":"Wermes","year":"2018","journal-title":"Rep. Prog. Phys."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"370","DOI":"10.1016\/j.nima.2009.01.098","article-title":"Pixel detectors for charged particles","volume":"604","author":"Wermes","year":"2009","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"44","DOI":"10.1016\/j.nima.2018.07.003","article-title":"Pixel detectors... where do we stand?","volume":"924","author":"Wermes","year":"2019","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"434","DOI":"10.1016\/j.nima.2015.09.057","article-title":"ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade","volume":"824","author":"Mager","year":"2016","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"P06008","DOI":"10.1088\/1748-0221\/12\/06\/P06008","article-title":"First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors","volume":"12","author":"Pernegger","year":"2017","journal-title":"J. Instrum."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"C01039","DOI":"10.1088\/1748-0221\/12\/01\/C01039","article-title":"Development of a depleted monolithic CMOS sensor in a 150 nm CMOS technology for the ATLAS inner tracker upgrade","volume":"12","author":"Wang","year":"2017","journal-title":"J. Instrum."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"C03056","DOI":"10.1088\/1748-0221\/9\/03\/C03056","article-title":"The PERCIVAL soft X-ray imager","volume":"9","author":"Wunderer","year":"2014","journal-title":"J. Instrum."},{"key":"ref_8","unstructured":"Hatsui, T., Omodani, M., Kudo, T., Kobayashi, K., Imamura, T., Ohmoto, T., Iwata, A., Ono, S., Kirihara, Y., and Kameshima, T. (2013, January 12\u201316). A direct-detection X-ray CMOS image sensor with 500 \u03bcm thick high resistivity silicon. Proceedings of the 2013 International Image Sensor Workshop, Snowbird, UT, USA. Available online: http:\/\/www.imagesensors.org\/Past%20Workshops\/2013%20Workshop\/2013%20Papers\/03-5_058_hatsui_paper.pdf."},{"key":"ref_9","first-page":"345","article-title":"iMPACT: An innovative tracker and calorimeter for proton computed tomography","volume":"2","author":"Mattiazzo","year":"2017","journal-title":"IEEE Tran. Rad. Plasma Med. Sci."},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Scotti, V., Osteria, G., and The CSES-LIMADOU Collaboration (August, January 24). The High Energy Particle Detector onboard CSES-02 satellite. Proceedings of the 36th International Cosmic Ray Conference (ICRC), Madison, WI, USA. Available online: https:\/\/pos.sissa.it\/358\/135\/pdf.","DOI":"10.22323\/1.358.0135"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"P03003","DOI":"10.1088\/1748-0221\/4\/03\/P03003","article-title":"Intrinsic properties of DEPFET active pixel sensors","volume":"4","author":"Rummel","year":"2009","journal-title":"J. Instrum."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"59","DOI":"10.1016\/j.nima.2010.12.116","article-title":"The Belle-II DEPFET pixel detector: A step forward in vertexing in the superKEKB flavour factory","volume":"650","author":"Vos","year":"2011","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"540","DOI":"10.1016\/j.nima.2010.03.173","article-title":"MIXS on BepiColombo and its DEPFET based focal plane instrumentation","volume":"624","author":"Treis","year":"2010","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"528","DOI":"10.1016\/j.nima.2010.03.002","article-title":"DEPFET sensor with intrinsic signal compression developed for use at the XFEL free electron laser radiation source","volume":"624","author":"Lutz","year":"2010","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Lutz, G., Porro, M., Aschauer, S., W\u00f6lfel, S., and Str\u00fcder, L. (2016). The DEPFET sensor-amplifier structure: A method to beat 1\/f noise and reach sub-electron noise in pixel detectors. Sensors, 16.","DOI":"10.3390\/s16050608"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"172","DOI":"10.1016\/j.nima.2005.01.054","article-title":"Development of monolithic active pixel detector in SOI technology","volume":"541","author":"Kucewicz","year":"2005","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_17","first-page":"2732","article-title":"SoI Monolithic Active Pixel Sensors for Radiation Detection Applications: A Review","volume":"15","author":"Lan","year":"2015","journal-title":"IEEE Sens. J."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"164435","DOI":"10.1016\/j.nima.2020.164435","article-title":"Radiation damage effects on double-SOI pixel sensors for X-ray astronomy","volume":"978","author":"Hagino","year":"2020","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"315","DOI":"10.1016\/j.nima.2016.03.095","article-title":"Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor","volume":"831","author":"Asano","year":"2016","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"251","DOI":"10.1016\/S0168-9002(02)02043-0","article-title":"Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology","volume":"501","author":"Turchetta","year":"2003","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1016\/S0168-9002(00)00893-7","article-title":"A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology","volume":"458","author":"Turchetta","year":"2001","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"60","DOI":"10.1016\/j.nima.2018.03.003","article-title":"The STAR MAPS-based PiXeL detector","volume":"907","author":"Contin","year":"2018","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_23","doi-asserted-by":"crossref","unstructured":"Rossi, L., Fischer, P., Rohe, T., and Wermes, N. (2006). Pixel Detectors: From Fundamentals to Applications, Springer Science & Business Media.","DOI":"10.1007\/3-540-28333-1"},{"key":"ref_24","first-page":"1","article-title":"Silicon microstrip detectors. In: Instrumentation in High Energy Physics","volume":"9","author":"Peisert","year":"1992","journal-title":"World Sci. Adv. Ser. Direct. High Energy Phys."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"164432","DOI":"10.1016\/j.nima.2020.164432","article-title":"The Phase-2 Upgrade of the CMS Outer Tracker","volume":"979","author":"Chowdhury","year":"2020","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"C01003","DOI":"10.1088\/1748-0221\/13\/01\/C01003","article-title":"A new strips tracker for the upgraded ATLAS ITk detector","volume":"13","author":"David","year":"2018","journal-title":"J. Instrum."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"422","DOI":"10.1016\/j.astropartphys.2007.08.010","article-title":"Design and initial tests of the Tracker-converter of the Gamma-ray Large Area Space Telescope","volume":"28","author":"Atwood","year":"2007","journal-title":"Astropart. Phys."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"378","DOI":"10.1016\/j.nima.2016.02.077","article-title":"The DAMPE silicon\u2013tungsten tracker","volume":"831","author":"Azzarello","year":"2016","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"72","DOI":"10.1016\/S0168-9002(03)01754-6","article-title":"The magnetic spectrometer of the PAMELA satellite experiment","volume":"511","author":"Adriani","year":"2003","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"639","DOI":"10.1016\/j.nima.2011.06.051","article-title":"Upgrade of the Alpha Magnetic Spectrometer (AMS-02) for long term operation on the International Space Station (ISS)","volume":"654","author":"Wlochal","year":"2011","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_31","first-page":"6","article-title":"DECAL: A Reconfigurable Monolithic Active Pixel Sensor for use in Calorimetry and Tracking","volume":"Volume 2","author":"Benhammadi","year":"2019","journal-title":"Topical Workshop on Electronics for Particle Physics"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"164520","DOI":"10.1016\/j.nima.2020.164520","article-title":"Study of CMOS strip sensor for future silicon tracker","volume":"981","author":"Han","year":"2020","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"485","DOI":"10.1016\/0168-9002(94)90785-4","article-title":"One micron spatial resolution with silicon strip detectors","volume":"348","author":"Straver","year":"1994","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_34","doi-asserted-by":"crossref","unstructured":"Sekigawa, D., Endo, S., Aoyagi, W., Hara, K., Honda, S., Tsuboyama, T., Yamada, M., Ono, S., Togawa, M., and Ikegmi, Y. (2017, January 22\u201326). Fine-pixel detector FPIX realizing sub-micron spatial resolution developed based on FD-SOI technology. Proceedings of the International Conference on Technology and Instrumentation in Particle Physics, Beijing, China. Available online: https:\/\/link.springer.com\/chapter\/10.1007\/978-981-13-1316-5_62.","DOI":"10.1007\/978-981-13-1316-5_62"},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"44","DOI":"10.1016\/0168-9002(93)90255-G","article-title":"Spatial resolution of silicon microstrip detectors","volume":"335","author":"Turchetta","year":"1993","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"90","DOI":"10.1016\/j.nima.2017.07.046","article-title":"A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance","volume":"871","author":"Snoeys","year":"2017","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"C06016","DOI":"10.1088\/1748-0221\/14\/06\/C06016","article-title":"A 110 nm CMOS process for fully-depleted pixel sensors","volume":"14","author":"Pancheri","year":"2019","journal-title":"J. Instrum."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"2393","DOI":"10.1109\/TED.2020.2985639","article-title":"Fully Depleted MAPS in 110-nm CMOS Process with 100\u2013300 \u03bcm Active Substrate","volume":"67","author":"Pancheri","year":"2020","journal-title":"IEEE Trans. Electron. Devices"},{"key":"ref_39","doi-asserted-by":"crossref","unstructured":"Neub\u00fcser, C., Corradino, T., Dalla Betta, G.-F., De Cilladi, L., and Pancheri, L. (2020). Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science. arXiv.","DOI":"10.3389\/fphy.2021.625401"},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"3510","DOI":"10.1063\/1.1661745","article-title":"Thermionic injection and space-charge-limited current in reach-through p+np+ structures","volume":"43","author":"Chu","year":"1972","journal-title":"J. Appl. Phys."},{"key":"ref_41","unstructured":"Passeri, D., and Morozzi, A. (2020, November 21). TCAD Radiation Damage Model. Available online: http:\/\/cds.cern.ch\/search?p=AIDA-2020-D7.4."},{"key":"ref_42","unstructured":"(2018). Sentaurus Device User Guide, Version O-2018.06, Synopsys Inc."},{"key":"ref_43","unstructured":"Centis Vignali, M. (2020, July 10). Available online: https:\/\/github.com\/mcentis\/muonOnSilicon."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"090001","DOI":"10.1088\/1674-1137\/38\/9\/090001","article-title":"Particle Detectors at Accelerators","volume":"38","author":"Olive","year":"2014","journal-title":"Chin. Phys. C"},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"030001","DOI":"10.1103\/PhysRevD.98.030001","article-title":"Passage of Particles Through Matter","volume":"98","author":"Tanabashi","year":"2018","journal-title":"Phys. Rev. D"},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"154","DOI":"10.1016\/j.nima.2006.03.009","article-title":"A method to improve tracking and particle identification in TPCs and silicon detectors","volume":"562","author":"Bichsel","year":"2006","journal-title":"Nucl. Instrum. Methods Phys. Res. Sect. A"},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"1045","DOI":"10.1109\/T-ED.1975.18267","article-title":"Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature","volume":"22","author":"Canali","year":"1975","journal-title":"IEEE Trans. Electron. Devices"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/6\/1990\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T05:34:21Z","timestamp":1760160861000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/6\/1990"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3,11]]},"references-count":47,"journal-issue":{"issue":"6","published-online":{"date-parts":[[2021,3]]}},"alternative-id":["s21061990"],"URL":"https:\/\/doi.org\/10.3390\/s21061990","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2021,3,11]]}}}