{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T23:09:02Z","timestamp":1772665742188,"version":"3.50.1"},"reference-count":26,"publisher":"MDPI AG","issue":"12","license":[{"start":{"date-parts":[[2021,6,19]],"date-time":"2021-06-19T00:00:00Z","timestamp":1624060800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["2020R1A2C1007586"],"award-info":[{"award-number":["2020R1A2C1007586"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["P0002397"],"award-info":[{"award-number":["P0002397"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV\/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.<\/jats:p>","DOI":"10.3390\/s21124213","type":"journal-article","created":{"date-parts":[[2021,6,20]],"date-time":"2021-06-20T21:50:15Z","timestamp":1624225815000},"page":"4213","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":19,"title":["Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor"],"prefix":"10.3390","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4248-558X","authenticated-orcid":false,"given":"Seong-Kun","family":"Cho","sequence":"first","affiliation":[{"name":"Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3932-4892","authenticated-orcid":false,"given":"Won-Ju","family":"Cho","sequence":"additional","affiliation":[{"name":"Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, Korea"}]}],"member":"1968","published-online":{"date-parts":[[2021,6,19]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"441","DOI":"10.4015\/S1016237209001593","article-title":"Sodium and potassium sensors based on separated extended gate field effect transistor","volume":"21","author":"Hsu","year":"2009","journal-title":"Biomed. Eng. Appl. Basis Commun."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"4947","DOI":"10.1039\/C4AN00714J","article-title":"Selective ion-sensing with membrane-functionalized electrolyte-gated carbon nanotube field-effect transistors","volume":"139","author":"Melzer","year":"2014","journal-title":"Analyst"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"10715","DOI":"10.1021\/am402857w","article-title":"Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors","volume":"5","author":"Kim","year":"2013","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"10702","DOI":"10.1039\/c3nr02703a","article-title":"Current and emerging challenges of field effect transistor based bio-sensing","volume":"5","author":"Matsumoto","year":"2013","journal-title":"Nanoscale"},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"3992","DOI":"10.1021\/nn5009148","article-title":"MoS2 field-effect transistor for next-generation label-free biosensors","volume":"8","author":"Sarkar","year":"2014","journal-title":"ACS Nano"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"344","DOI":"10.1016\/j.snb.2018.02.148","article-title":"Label-free detection of Cordyceps sinensis using dual-gate nanoribbon-based ion-sensitive field-effect transistor biosensor","volume":"264","author":"Ma","year":"2018","journal-title":"Sens. Actuators B Chem."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"2268","DOI":"10.1021\/nl100892y","article-title":"Nernst limit in dual-gated Si-nanowire FET sensors","volume":"10","author":"Knopfmacher","year":"2010","journal-title":"Nano Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"043502","DOI":"10.1063\/1.3546169","article-title":"Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors","volume":"98","author":"Spijkman","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"3231","DOI":"10.1002\/adma.201101493","article-title":"Dual-gate thin-film transistors, integrated circuits and sensors","volume":"23","author":"Spijkman","year":"2011","journal-title":"Adv. Mater."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1244","DOI":"10.1109\/T-ED.1983.21282","article-title":"Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET\u2019s","volume":"30","author":"Lim","year":"1983","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"5284","DOI":"10.1038\/srep05284","article-title":"Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin-body","volume":"4","author":"Jang","year":"2014","journal-title":"Sci. Rep."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"22680","DOI":"10.1021\/am506805a","article-title":"Microwave annealing effect for highly reliable biosensor: Dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor","volume":"6","author":"Lee","year":"2014","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"16789","DOI":"10.1039\/C5NR03146J","article-title":"A self-amplified transistor immunosensor under dual gate operation: Highly sensitive detection of hepatitis B surface antigen","volume":"7","author":"Lee","year":"2015","journal-title":"Nanoscale"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"880","DOI":"10.1016\/j.snb.2013.02.056","article-title":"Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation","volume":"181","author":"Jang","year":"2013","journal-title":"Sens. Actuators B Chem."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"128835","DOI":"10.1016\/j.snb.2020.128835","article-title":"Ultra-high sensitivity pH-sensors using silicon nanowire channel dual-gate field-effect transistors fabricated by electrospun polyvinylpyrrolidone nanofibers pattern template transfer","volume":"326","author":"Cho","year":"2021","journal-title":"Sens. Actuators B Chem."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"1965","DOI":"10.1016\/S0008-6223(99)00071-8","article-title":"Change of chemical bonding of nitrogen of polymeric N-heterocyclic compounds during pyrolysis","volume":"37","author":"Schmiers","year":"1999","journal-title":"Carbon"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"2334","DOI":"10.1021\/nl200623n","article-title":"Al2O3\/silicon nanoISFET with near ideal Nernstian response","volume":"11","author":"Chen","year":"2011","journal-title":"Nano Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"035003","DOI":"10.1088\/1361-6641\/aa5138","article-title":"Highly sensitive ion-sensitive field-effect transistor sensor using fully transparent amorphous In\u2013Ga\u2013Zn\u2013O thin-film transistors","volume":"32","author":"Ahn","year":"2017","journal-title":"Semicond. Sci. Technol."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"2046","DOI":"10.1109\/TED.2005.855063","article-title":"Demonstration, analysis, and device design considerations for independent DG MOSFETs","volume":"52","author":"Masahara","year":"2005","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"12646","DOI":"10.1021\/acsnano.8b07413","article-title":"Three-dimensional integrated ultra-low-volume passive microfluidics with ion-sensitive field-effect transistors for multiparameter wearable sweat analyzers","volume":"12","author":"Bellando","year":"2018","journal-title":"ACS Nano"},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2039","DOI":"10.1021\/acssensors.9b00597","article-title":"Sweat biomarker sensor incorporating picowatt, three-dimensional extended metal gate ion sensitive field effect transistors","volume":"4","author":"Zhang","year":"2019","journal-title":"ACS Sens."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"5020","DOI":"10.1016\/S1452-3981(23)19600-3","article-title":"Sensing performance of EGFET pH sensors with CuO nanowires fabricated on glass substrate","volume":"7","author":"Chang","year":"2012","journal-title":"Int. J. Electrochem. Sci."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"8","DOI":"10.1109\/T-ED.1986.22429","article-title":"A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor","volume":"33","author":"Fung","year":"1986","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"157","DOI":"10.1016\/0925-4005(94)87044-6","article-title":"Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulators","volume":"17","author":"Bousse","year":"1994","journal-title":"Sens. Actuators B Chem."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"624","DOI":"10.1016\/S0925-4005(01)00657-8","article-title":"Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide","volume":"76","author":"Chiang","year":"2001","journal-title":"Sens. Actuators B Chem."},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"619","DOI":"10.1016\/j.snb.2009.01.051","article-title":"Study of high-k Er2O3 thin layers as ISFET sensitive insulator surface for pH detection","volume":"138","author":"Pan","year":"2009","journal-title":"Sens. Actuators B Chem."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/12\/4213\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T06:19:16Z","timestamp":1760163556000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/12\/4213"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,6,19]]},"references-count":26,"journal-issue":{"issue":"12","published-online":{"date-parts":[[2021,6]]}},"alternative-id":["s21124213"],"URL":"https:\/\/doi.org\/10.3390\/s21124213","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,6,19]]}}}