{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T14:06:44Z","timestamp":1778249204430,"version":"3.51.4"},"reference-count":29,"publisher":"MDPI AG","issue":"16","license":[{"start":{"date-parts":[[2021,8,8]],"date-time":"2021-08-08T00:00:00Z","timestamp":1628380800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012659","name":"Foundation for Innovative Research Groups of the National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["Nos. 91860117"],"award-info":[{"award-number":["Nos. 91860117"]}],"id":[{"id":"10.13039\/501100012659","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2\u03b8), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.<\/jats:p>","DOI":"10.3390\/s21165345","type":"journal-article","created":{"date-parts":[[2021,8,8]],"date-time":"2021-08-08T21:35:40Z","timestamp":1628458540000},"page":"5345","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement"],"prefix":"10.3390","volume":"21","author":[{"given":"Ling","family":"Dong","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electronic Thin Coating and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yang","family":"Li","sequence":"additional","affiliation":[{"name":"School of Power and Energy, Northwestern Polytechnical University, Xi\u2019an 710129, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jingwen","family":"Lv","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Coating and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongchuan","family":"Jiang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Coating and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wanli","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Coating and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2021,8,8]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Tillmann, W., Kokalj, D., Stangier, D., Schoppner, V., and Malatyali, H. (2019). Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni\/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3. Sensors, 19.","DOI":"10.3390\/s19153414"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1105","DOI":"10.1021\/acsaelm.9b00103","article-title":"Structural and Electrical Properties of Flexible ITO\/In2O3 Thermocouples on PI Substrates under Tensile Stretching","volume":"1","author":"Shi","year":"2019","journal-title":"ACS Appl. Electron. Mater."},{"key":"ref_3","doi-asserted-by":"crossref","unstructured":"Zhao, X., Liang, X., Jiang, S., Zhang, W., and Jiang, H. (2017). Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples. Crystals, 7.","DOI":"10.3390\/cryst7040096"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"1152","DOI":"10.1016\/j.proeng.2014.12.697","article-title":"The Research of Temperature Indicating Paints and its Application in Aero-engine Temperature Measurement","volume":"99","author":"Yang","year":"2015","journal-title":"Procedia Eng."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"12305","DOI":"10.3390\/s140712305","article-title":"Infrared thermography for temperature measurement and non-destructive testing","volume":"14","author":"Usamentiaga","year":"2014","journal-title":"Sensors"},{"key":"ref_6","doi-asserted-by":"crossref","unstructured":"Castro, P., Lecuna, R., Manana, M., Martin, M.J., and Campo, D.D. (2020). Infrared Temperature Measurement Sensors of Overhead Power Conductors. Sensors, 20.","DOI":"10.3390\/s20247126"},{"key":"ref_7","doi-asserted-by":"crossref","unstructured":"Piccinini, F., Martinelli, G., and Carbonaro, A. (2021). Reliability of Body Temperature Measurements Obtained with Contactless Infrared Point Thermometers Commonly Used during the COVID-19 Pandemic. Sensors, 21.","DOI":"10.3390\/s21113794"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"7766","DOI":"10.1021\/jp201367b","article-title":"Identification of sublattice damages in swift heavy ion irradiated N-doped 6H-SiC polytype studied by solid state NMR","volume":"115","author":"Viswanathan","year":"2011","journal-title":"J. Phys. Chem. B"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"2303","DOI":"10.1063\/1.4723648","article-title":"Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC","volume":"111","author":"Jin","year":"2012","journal-title":"J. Appl. Phys."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"335","DOI":"10.4028\/www.scientific.net\/KEM.495.335","article-title":"High-Temperature Sensor Based on Neutron-Irradiated 6H-SiC","volume":"495","author":"Ruan","year":"2011","journal-title":"Key Eng. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"118032","DOI":"10.1016\/j.jlumin.2021.118032","article-title":"Origination and evolution of point defects in AlN film annealed at high temperature","volume":"235","author":"Kai","year":"2021","journal-title":"J. Lumin."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"41","DOI":"10.1016\/j.jcrysgro.2018.09.002","article-title":"Improvement mechanism of sputtered AlN films by high-temperature annealing","volume":"502","author":"Xiao","year":"2018","journal-title":"J. Cryst. Growth"},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"142","DOI":"10.1016\/j.jcrysgro.2019.02.024","article-title":"Stabilization of sputtered AlN\/sapphire templates during high temperature annealing","volume":"512","author":"Hagedorn","year":"2019","journal-title":"J. Cryst. Growth"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"156128","DOI":"10.1016\/j.jallcom.2020.156128","article-title":"Effects of N2-content on formation behavior in AlN thin films studied by NEXAFS: Theory and experiment","volume":"844","author":"Supruangnet","year":"2020","journal-title":"J. Alloy. Compd."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"59","DOI":"10.1016\/j.apsusc.2012.06.086","article-title":"c-axis orientation and piezoelectric coefficients of AlN thin films sputter-deposited on titanium bottom electrodes","volume":"259","author":"Ababneh","year":"2012","journal-title":"Appl. Surf. Sci."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"025503","DOI":"10.1088\/1361-6455\/aa9737","article-title":"Radiation damage free ghost diffraction with atomic resolution","volume":"51","author":"Li","year":"2018","journal-title":"J. Phys. B At. Mol. Opt. Phys."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"163105","DOI":"10.1063\/1.4919419","article-title":"Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN","volume":"117","author":"Kita","year":"2015","journal-title":"J. Appl. Phys."},{"key":"ref_18","first-page":"5","article-title":"The Limits of the Post-Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering","volume":"257","author":"Solonenko","year":"2019","journal-title":"Phys. Status Solidi (B)"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"16","DOI":"10.1016\/j.jcrysgro.2019.02.001","article-title":"Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film","volume":"512","author":"Tanaka","year":"2019","journal-title":"J. Cryst. Growth"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1016\/j.spmi.2019.03.014","article-title":"Effects of Eu ions dose and annealing temperature on the structural and optical properties of Eu-implanted AlN thin films","volume":"129","author":"Chen","year":"2019","journal-title":"Superlattices Microstruct."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"972","DOI":"10.1016\/j.apsusc.2018.07.138","article-title":"Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition","volume":"458","author":"Li","year":"2018","journal-title":"Appl. Surf. Sci."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"1254","DOI":"10.1002\/sia.2874","article-title":"XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy","volume":"40","author":"Rosenberger","year":"2008","journal-title":"Surf. Interface Anal."},{"key":"ref_23","unstructured":"Yan, S. (2019). Interpretation Technology of Crystal temperature Measurement for Aero-engine Turbine Blades. [Master\u2019s Thesis, University of Electronic Science and Technology of China]."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"292","DOI":"10.1016\/j.spl.2018.02.004","article-title":"Objective Bayesian inference for the intraclass correlation coefficient in linear models","volume":"137","author":"Zhang","year":"2018","journal-title":"Stat. Probab. Lett."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"20170213","DOI":"10.1098\/rsif.2017.0213","article-title":"The coefficient of determination R(2) and intra-class correlation coefficient from generalized linear mixed-effects models revisited and expanded","volume":"14","author":"Nakagawa","year":"2017","journal-title":"J. R. Soc. Interface"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1186\/1471-2288-14-135","article-title":"Estimating the sample mean and standard deviation from the sample size, median, range and\/or interquartile range","volume":"14","author":"Wan","year":"2014","journal-title":"BMC Med. Res. Methodol."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"764","DOI":"10.1016\/j.jesp.2013.03.013","article-title":"Detecting outliers: Do not use standard deviation around the mean, use absolute deviation around the median","volume":"49","author":"Leys","year":"2013","journal-title":"J. Exp. Soc. Psychol."},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"895","DOI":"10.1534\/g3.116.038059","article-title":"Predicted Residual Error Sum of Squares of Mixed Models: An Application for Genomic Prediction","volume":"7","author":"Xu","year":"2017","journal-title":"G3 Genes Genomes Genet."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"1841","DOI":"10.1364\/JOSAA.28.001841","article-title":"Performance measures of color-difference equations: Correlation coefficient versus standardized residual sum of squares","volume":"28","author":"Kirchner","year":"2011","journal-title":"J. Opt. Soc. Am. A"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/16\/5345\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,11]],"date-time":"2025-10-11T06:42:24Z","timestamp":1760164944000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/21\/16\/5345"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,8,8]]},"references-count":29,"journal-issue":{"issue":"16","published-online":{"date-parts":[[2021,8]]}},"alternative-id":["s21165345"],"URL":"https:\/\/doi.org\/10.3390\/s21165345","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,8,8]]}}}