{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,24]],"date-time":"2026-06-24T11:38:57Z","timestamp":1782301137315,"version":"3.54.5"},"reference-count":36,"publisher":"MDPI AG","issue":"16","license":[{"start":{"date-parts":[[2021,8,18]],"date-time":"2021-08-18T00:00:00Z","timestamp":1629244800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"the Industry and Education Combination Innovation Platform of Intelligent  Manufactur-ing  and  Graduate  Joint  Training  Base  at  Guizhou  University","award":["No: 2020-520000-83-01-324061"],"award-info":[{"award-number":["No: 2020-520000-83-01-324061"]}]},{"name":"the Science and Technology Department of Guizhou Province, China","award":["No. QKHJC [2020]1Y272"],"award-info":[{"award-number":["No. QKHJC [2020]1Y272"]}]},{"name":"the Growth Foundation for Young Scientists of Education Department of Guizhou Province, China","award":["QJHKY[2018]256"],"award-info":[{"award-number":["QJHKY[2018]256"]}]},{"name":"the Science and Technology Top Talent support Project of the Department of Education of Gui-zhou Province, China","award":["QJHKY[2018]058"],"award-info":[{"award-number":["QJHKY[2018]058"]}]},{"name":"the growth Project of Young Scientific and technological talents in ordinary Colleges and Uni-versities in Guizhou Province, China","award":["QJHKY[2021]234"],"award-info":[{"award-number":["QJHKY[2021]234"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic and harmful substances which are not conducive to the sustainable development of infrared detectors and are not eco-friendly. Mg2Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. In this work, we report on the results of our simulation studies on the PN junction Mg2Si\/Si heterojunction PD. A model structure of Mg2Si\/Si heterojunction PD has been built. The effects of Mg2Si and Si layer thickness on the optical and electrical performance of Mg2Si\/Si heterojunction PD are discussed. For the purpose of this analysis, we consider electrical performance parameters such as I\u2013V curve, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on-off ratio, response time, and recovery time. The simulation results show that the Mg2Si\/Si heterojunction PD shows optimum performance when the thickness of Si and Mg2Si layers are 300 nm and 280 nm, respectively. For the optimized structure, the reverse breakdown voltage was found to be \u221223.61 V, the forward conduction voltage was 0.51 V, the dark current was 5.58 \u00d7 10\u221213 A, and the EQE was 88.98%. The responsivity was found to be 0.437 A\/W, the NEP was 6.38 \u00d7 10\u221212 WHz1\/2, and the detectivity was 1.567 \u00d7 1011 Jones. With the on-off ratio of 1566, the response time was found to be 0.76 ns and the recovery time was 5.75 ns. The EQE and responsivity peak wavelength of PD show a redshift as the thickness of Mg2Si increases. The Mg2Si heterojunction PD can effectively detect infrared light in the wavelength range of 400 to 1400 nm. The simulation results can be utilized to drive the development of green Mg2Si\/Si heterojunction PD in the future.<\/jats:p>","DOI":"10.3390\/s21165559","type":"journal-article","created":{"date-parts":[[2021,8,18]],"date-time":"2021-08-18T22:51:00Z","timestamp":1629327060000},"page":"5559","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["Technology CAD (TCAD) Simulations of Mg2Si\/Si Heterojunction Photodetector Based on the Thickness Effect"],"prefix":"10.3390","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5439-8574","authenticated-orcid":false,"given":"Hong","family":"Yu","sequence":"first","affiliation":[{"name":"The College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China"},{"name":"The College of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shentong","family":"Ji","sequence":"additional","affiliation":[{"name":"The College of Physics and Electronic Science, Guizhou Education University, Guiyang 550018, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiangyan","family":"Luo","sequence":"additional","affiliation":[{"name":"The College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Quan","family":"Xie","sequence":"additional","affiliation":[{"name":"The College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2021,8,18]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"311","DOI":"10.1016\/j.jpcs.2012.10.005","article-title":"Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion","volume":"74","author":"Udono","year":"2013","journal-title":"J. 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