{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,10]],"date-time":"2026-06-10T12:51:54Z","timestamp":1781095914035,"version":"3.54.1"},"reference-count":34,"publisher":"MDPI AG","issue":"18","license":[{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["2018R1D1A1B07048382 and MSIT-2021R1A4A10520850"],"award-info":[{"award-number":["2018R1D1A1B07048382 and MSIT-2021R1A4A10520850"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO2 (a-SnO2) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO\/a-SnO2 NRs core\u2013shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO\/SnO2 NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO2 shell layer. With a wide bandgap (~4.5 eV), the a-SnO2 shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO2-coated ZnO core\u2013shell structure qualifies as a candidate for ZnO-based PDs.<\/jats:p>","DOI":"10.3390\/s21186124","type":"journal-article","created":{"date-parts":[[2021,9,14]],"date-time":"2021-09-14T03:46:14Z","timestamp":1631591174000},"page":"6124","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["Improved Photoresponse Characteristics of a ZnO-Based UV Photodetector by the Formation of an Amorphous SnO2 Shell Layer"],"prefix":"10.3390","volume":"21","author":[{"given":"Junhyuk","family":"Yoo","sequence":"first","affiliation":[{"name":"Department of Electronics & Computer Engineering, Hanyang University, Seoul 04763, Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Uijin","family":"Jung","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bomseumin","family":"Jung","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenhu","family":"Shen","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1079-5532","authenticated-orcid":false,"given":"Jinsub","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Electronics & Computer Engineering, Hanyang University, Seoul 04763, Korea"},{"name":"Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2021,9,13]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"R33","DOI":"10.1088\/0268-1242\/18\/4\/201","article-title":"Wide-bandgap semiconductor ultraviolet photodetectors","volume":"18","author":"Monroy","year":"2003","journal-title":"Semicond. 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