{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,28]],"date-time":"2026-02-28T04:29:51Z","timestamp":1772252991640,"version":"3.50.1"},"reference-count":20,"publisher":"MDPI AG","issue":"19","license":[{"start":{"date-parts":[[2021,9,26]],"date-time":"2021-09-26T00:00:00Z","timestamp":1632614400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Tuning fork gyroscopes (TFGs) are promising for potential high-precision applications. This work proposes and experimentally demonstrates a novel high-Q dual-mass tuning fork microelectromechanical system (MEMS) gyroscope utilizing three-dimensional (3D) packaging techniques. Except for two symmetrically decoupled proof masses (PM) with synchronization structures, a symmetrically decoupled lever structure is designed to force the antiparallel, antiphase drive mode motion and eliminate low frequency spurious modes. Thermoelastic damping (TED) and anchor loss are greatly reduced by the linearly coupled, momentum- and torque-balanced antiphase sense mode. Moreover, a novel 3D packaging technique is used to realize high Q-factors. A composite substrate encapsulation cap, fabricated by through-silicon-via (TSV) and glass-in-silicon (GIS) reflow processes, is anodically bonded to the wafer-scale sensing structures. A self-developed control circuit is adopted to realize loop control and characterize gyroscope performances. It is shown that a high-reliability electrical connection, together with a high air impermeability package, can be fulfilled with this 3D packaging technique. Furthermore, the Q-factors of the drive and sense modes reach up to 51,947 and 49,249, respectively. This TFG realizes a wide measurement range of \u00b11800 \u00b0\/s and a high resolution of 0.1\u00b0\/s with a scale factor nonlinearity of 720 ppm after automatic mode matching. In addition, long-term zero-rate output (ZRO) drift can be effectively suppressed by temperature compensation, inducing a small angle random walk (ARW) of 0.923\u00b0\/\u221ah and a low bias instability (BI) of 9.270\u00b0\/h.<\/jats:p>","DOI":"10.3390\/s21196428","type":"journal-article","created":{"date-parts":[[2021,9,27]],"date-time":"2021-09-27T22:16:38Z","timestamp":1632780998000},"page":"6428","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["A Novel High-Q Dual-Mass MEMS Tuning Fork Gyroscope Based on 3D Wafer-Level Packaging"],"prefix":"10.3390","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3738-3925","authenticated-orcid":false,"given":"Pengfei","family":"Xu","sequence":"first","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}]},{"given":"Chaowei","family":"Si","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}]},{"given":"Yurong","family":"He","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}]},{"given":"Zhenyu","family":"Wei","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}]},{"given":"Lu","family":"Jia","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}]},{"given":"Guowei","family":"Han","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}]},{"given":"Jin","family":"Ning","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China"}]},{"given":"Fuhua","family":"Yang","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}]}],"member":"1968","published-online":{"date-parts":[[2021,9,26]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"11222","DOI":"10.3390\/s150511222","article-title":"An Adaptive Compensation Algorithm for Temperature Drift of Micro-Electro-Mechanical Systems Gyroscopes Using a Strong Tracking Kalman Filter","volume":"15","author":"Feng","year":"2015","journal-title":"Sensors"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"2053","DOI":"10.1007\/s00542-015-2645-x","article-title":"Research development of silicon MEMS gyroscopes: A review","volume":"21","author":"Zhanshe","year":"2015","journal-title":"Microsyst. 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