{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T00:41:39Z","timestamp":1760402499562,"version":"build-2065373602"},"reference-count":30,"publisher":"MDPI AG","issue":"1","license":[{"start":{"date-parts":[[2022,1,5]],"date-time":"2022-01-05T00:00:00Z","timestamp":1641340800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"publisher","award":["2021QN1107"],"award-info":[{"award-number":["2021QN1107"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.<\/jats:p>","DOI":"10.3390\/s22010399","type":"journal-article","created":{"date-parts":[[2022,1,9]],"date-time":"2022-01-09T23:08:26Z","timestamp":1641769706000},"page":"399","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Current-Induced Spin Photocurrent in GaAs at Room Temperature"],"prefix":"10.3390","volume":"22","author":[{"given":"Yang","family":"Zhang","sequence":"first","affiliation":[{"name":"School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China"},{"name":"Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China"}]},{"given":"Yu","family":"Liu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China"}]},{"given":"Xiao-Lan","family":"Xue","sequence":"additional","affiliation":[{"name":"School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China"}]},{"given":"Xiao-Lin","family":"Zeng","sequence":"additional","affiliation":[{"name":"Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China"}]},{"given":"Jing","family":"Wu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China"}]},{"given":"Li-Wei","family":"Shi","sequence":"additional","affiliation":[{"name":"School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China"}]},{"given":"Yong-Hai","family":"Chen","sequence":"additional","affiliation":[{"name":"Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China"}]}],"member":"1968","published-online":{"date-parts":[[2022,1,5]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"126603","DOI":"10.1103\/PhysRevLett.97.126603","article-title":"Current-induced polarization and the spin Hall effect at room temperature","volume":"97","author":"Stern","year":"2006","journal-title":"Phys. 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