{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,30]],"date-time":"2025-12-30T11:17:57Z","timestamp":1767093477343,"version":"build-2065373602"},"reference-count":30,"publisher":"MDPI AG","issue":"2","license":[{"start":{"date-parts":[[2022,1,10]],"date-time":"2022-01-10T00:00:00Z","timestamp":1641772800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>This paper presents a fast-switching Transmit\/Receive (T\/R) Single-Pole-Double-Throw (SPDT) Radio Frequency (RF) switch. Thorough analyses have been conducted to choose the optimum number of stacks, transistor sizes, gate and body voltages, to satisfy the required specifications. This switch applies six stacks of series and shunt transistors as big as 3.9 mm\/160 nm and 0.75 mm\/160 nm, respectively. A negative charge pump and a voltage booster generate the negative and boosted control voltages to improve the harmonics and to keep Inter-Modulation Distortion (IMD) performance of the switch over 100 dBc. A Low Drop-Out (LDO) regulator limits the boosted voltage in Absolute Maximum Rating (AMR) conditions and improves the switch performance for Process, Voltage and Temperature (PVT) variations. To reduce the size, a dense custom-made capacitor consisting of different types of capacitors has been presented where they have been placed over each other in layout considering the Design Rule Checks (DRC) and applied in negative charge pump, voltage booster and LDO. This switch has been fabricated and tested in a 90 nm Silicon-on-Insulator (SOI) process. The second and third IMD for all specified blockers remain over 100 dBc and the switching time as fast as 150 ns has been achieved. The Insertion Loss (IL) and isolation at 2.7 GHz are \u22120.17 dB and \u221233 dB, respectively. This design consumes 145 uA from supply voltage range of 1.65 V to 1.95 V and occupies 440 \u00d7 472 \u00b5m2 of die area.<\/jats:p>","DOI":"10.3390\/s22020507","type":"journal-article","created":{"date-parts":[[2022,1,10]],"date-time":"2022-01-10T22:03:13Z","timestamp":1641852193000},"page":"507","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["T\/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9230-3062","authenticated-orcid":false,"given":"Behnam S.","family":"Rikan","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"David","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Kyung-Duk","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5852-5761","authenticated-orcid":false,"given":"Arash","family":"Hejazi","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Joon-Mo","family":"Yoo","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"YoungGun","family":"Pu","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Seokkee","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Hyungki","family":"Huh","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Yeonjae","family":"Jung","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]},{"given":"Kang-Yoon","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea"},{"name":"SKAIChips Co., Ltd., Suwon 16419, Korea"}]}],"member":"1968","published-online":{"date-parts":[[2022,1,10]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1049\/iet-map.2015.0487","article-title":"Effects and contrasts of silicon-on-insulator floating-body and body-contacted field-effect transistors to the design of high-performance antenna switches","volume":"10","author":"Zhang","year":"2016","journal-title":"IET Microw. Antennas Propag."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Chaudhry, Q., Bayruns, R., Arnold, B., and Sheehy, P. (2012, January 17\u201319). A linear CMOS SOI SP14T antenna switch for cellular applications. Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium, Montreal, QC, Canada.","DOI":"10.1109\/RFIC.2012.6242253"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"3639","DOI":"10.1109\/TMTT.2013.2277989","article-title":"Design of high-order switches for multimode applications on a silicon-on-insulator technology","volume":"61","author":"Tombak","year":"2013","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_4","unstructured":"Ahn, M., Cha, J., Cho, C., Lee, C., and Laskar, J. (2010, January 28\u201330). Ultra low loss and high linearity SPMT antenna switch using SOI CMOS process. Proceedings of the 40th European Microwave Conference, Paris, France."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1964","DOI":"10.1109\/TMTT.2015.2427801","article-title":"A Stacked-FET Linear SOI CMOS Cellular Antenna Switch With an Extremely Low-Power Biasing Strategy","volume":"63","author":"Im","year":"2015","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"2638","DOI":"10.1109\/TED.2009.2030444","article-title":"A symmetrical model for microwave power AlGaAs\/InGaAs pHEMTs for switch circuit applications","volume":"56","year":"2009","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_7","unstructured":"Yore, M.D., Nevers, C.A., and Cortese, P. (2010, January 27\u201328). High-isolation low-loss SP7T pHEMT switch suitable for antenna switch modules. Proceedings of the 5th European Microwave Integrated Circuits Conference, Paris, France."},{"key":"ref_8","unstructured":"Shin, O.C., Kim, Y.S., and Jeong, I.H. (2010, January 7\u201310). Implementation of new SP6T switch achieving high quality and small size at same time. Proceedings of the 2010 Asia-Pacific Microwave Conference, Yokohama, Japan."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Rao, C.V.N., Ghodgaonkar, D.K., Sinha, P., and Jyoti, R. (2018, January 28\u201330). MMIC High Power Transmit\/Receive Switches with integrated Low Noise Amplifiers using GaAs and GaN Processes. Proceedings of the 2018 IEEE MTT-S International Microwave and RF Conference (IMaRC), Kolkata, India.","DOI":"10.1109\/IMaRC.2018.8877153"},{"key":"ref_10","doi-asserted-by":"crossref","unstructured":"Shi, L., Li, Q., Dai, H., Wang, Z., and Jing, H. (2019, January 2\u20135). GaAs pHEMT Single Pole Double Throw(SPDT) RF Switch Failure Analysis. Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China.","DOI":"10.1109\/IPFA47161.2019.8984831"},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Sari, S., Tulasi, S.D., Nagaveni, H., and Karthik, S. (2020, January 6\u20138). DC\u20136 GHz GaAs MMIC Compact SPDT Switch. Proceedings of the IEEE International Conference for Innovation in Technology (INOCON), Bangluru, India.","DOI":"10.1109\/INOCON50539.2020.9298270"},{"key":"ref_12","doi-asserted-by":"crossref","unstructured":"Tombak, A., Iversen, C., Pierres, J.B., Kerr, D., Carroll, M., Mason, P., Spears, E., and Gillenwater, T. (2010, January 23\u201325). Cellular antenna switches for multimode applications based on a Silicon-on-Insulator technology. Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, Anaheim, CA, USA.","DOI":"10.1109\/RFIC.2010.5477354"},{"key":"ref_13","unstructured":"Bonkowski, J., and Kelly, D. (2004, January 6\u20138). Integration of triple-band GSM antenna switch module using SOI CMOS. Proceedings of the 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems, Forth Worth, TX, USA."},{"key":"ref_14","unstructured":"Tombak, A. (2012, January 17\u201319). Silicon-on-insulator (SOI) switches for cellular and WLAN front-end applications. Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium Workshop, Montreal, QC, Canada."},{"key":"ref_15","doi-asserted-by":"crossref","unstructured":"Malladi, V.N.K., and Miller, M. (2019, January 20\u201323). A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications. Proceedings of the IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA.","DOI":"10.1109\/SIRF.2019.8709096"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"543","DOI":"10.1109\/JEDS.2018.2805780","article-title":"A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates","volume":"6","author":"Esfeh","year":"2018","journal-title":"IEEE J. Electron. Devices Soc."},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Jaffe, M., Abou-Khalil, M., Botula, A., Ellis-Monaghan, J., Gambino, J., Gross, J., He, Z., Joseph, A., Phelps, R., and Shank, S. (2015, January 26\u201328). Improvements in SOI Technology for RF Switches. Proceedings of the IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, USA.","DOI":"10.1109\/SIRF.2015.7119865"},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Joshi, A., Lee, S., Chen, Y.Y., and Lee, T.Y. (2012, January 1\u20134). Optimized CMOS-SOI process for high performance RF switches. Proceedings of the IEEE International SOI Conference (SOI), Napa, CA, USA.","DOI":"10.1109\/SOI.2012.6404385"},{"key":"ref_19","unstructured":"Drillet, F., Loraine, J., Saleh, H., Lahbib, I., Grandchamp, B., Iogna-Prat, L., Lahbib, I., Sow, O., and Uren, G. (2021, January 10\u201315). RF SPST Switch Based on Innovative Heterogeneous GaN\/SOI Integration Technique. Proceedings of the 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, The Netherlands."},{"key":"ref_20","doi-asserted-by":"crossref","unstructured":"Emam, M., Raskin, J.P., and Janvier, D.V. (2011, January 17\u201319). RF antenna switch using dynamic threshold SOI MOSFET. Proceedings of the IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Glendale, AZ, USA.","DOI":"10.1109\/SIRF.2011.5719333"},{"key":"ref_21","doi-asserted-by":"crossref","unstructured":"Rikan, B.S., Kim, D., Choi, K.D., Asl, S.A.H., Yoo, J.M., Pu, Y., Kim, S., Huh, H., Jung, Y., and Lee, K.-Y. (2021). A Low-Band Multi-Gain LNA Design for Diversity Receive Module with 1.2 dB NF. Sensors, 21.","DOI":"10.3390\/s21248340"},{"key":"ref_22","doi-asserted-by":"crossref","unstructured":"Rikan, B.S., Abbasizadeh, H., Nga, T.T.K., Kim, S.J., and Lee, K. (2017, January 5\u20138). A low leakage retention LDO and leakage-based BGR with 120nA quiescent current. Proceedings of the International SoC Design Conference (ISOCC), Seoul, Korea.","DOI":"10.1109\/ISOCC.2017.8368851"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"37","DOI":"10.7471\/ikeee.2014.18.1.037","article-title":"A High Current Efficiency CMOS LDO Regulator with Low Power Consumption and Small Output Voltage Variation","volume":"18","author":"Rikan","year":"2014","journal-title":"J. IKEEE"},{"key":"ref_24","doi-asserted-by":"crossref","unstructured":"Rikan, B.S., Kim, S.-Y., Ahmad, N., Abbasizadeh, H., Rahman, M.R.U., Shahzad, K., Hejazi, A., Rad, R.E., Verma, D., and Lee, K.-Y. (2018). A Sigma-Delta ADC for Signal Conditioning IC of Automotive Piezo-Resistive Pressure Sensors with over 80 dB SNR. Sensors, 18.","DOI":"10.3390\/s18124199"},{"key":"ref_25","first-page":"229","article-title":"Design Considerations of Charge Pump for Antenna Switch Controller With SOI CMOS Technology","volume":"64","author":"Yu","year":"2017","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"371","DOI":"10.1049\/el.2010.7555","article-title":"Negative charge-pump based antenna switch controller using 0.18 mm SOI CMOS technology","volume":"647","author":"Cho","year":"2011","journal-title":"Electron. Lett."},{"key":"ref_27","doi-asserted-by":"crossref","unstructured":"Liu, P., Wang, X., Wu, D., Zhang, Z., and Pan, L. (June, January 30). A Novel High-Speed and Low-Power Negative Voltage Level Shifter for Low Voltage Applications. Proceedings of the 2010 IEEE International Symposium on Circuits and Systems, Paris, France.","DOI":"10.1109\/ISCAS.2010.5537521"},{"key":"ref_28","unstructured":"Michal, V. (2012, January 17\u201318). On the low-power design, stability improvement and frequency estimation of the CMOS ring oscillator. Proceedings of the 22nd International Conference Radioelektronika, Brno, Czech Republic."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"849","DOI":"10.1109\/TMTT.2008.919047","article-title":"A high-power CMOS switch using a novel adaptive voltage swing distribution method in multistack FETs","volume":"56","author":"Ahn","year":"2008","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_30","unstructured":"Infineon Technologies AG (2016). Wideband RF SPDT Switch in Small Package with 0.77mm2 Footprint, Infineon Technologies AG."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/2\/507\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T14:14:46Z","timestamp":1760364886000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/2\/507"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,1,10]]},"references-count":30,"journal-issue":{"issue":"2","published-online":{"date-parts":[[2022,1]]}},"alternative-id":["s22020507"],"URL":"https:\/\/doi.org\/10.3390\/s22020507","relation":{},"ISSN":["1424-8220"],"issn-type":[{"type":"electronic","value":"1424-8220"}],"subject":[],"published":{"date-parts":[[2022,1,10]]}}}