{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,3]],"date-time":"2026-02-03T17:52:16Z","timestamp":1770141136807,"version":"3.49.0"},"reference-count":25,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2022,1,25]],"date-time":"2022-01-25T00:00:00Z","timestamp":1643068800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61971395"],"award-info":[{"award-number":["61971395"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Key R\\&amp;D Program of China","award":["2018YFE0204000"],"award-info":[{"award-number":["2018YFE0204000"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this study, we fabricated three kinds of terahertz detectors with different leakage currents to analyze the plateau-like effect. The results indicate that the platform becomes increasingly apparent with the decrease in the leakage current. The fabricated device with the lowest leakage current shows a responsivity of 4.9 kV\/W and noise equivalent power (NEP) of 72 pW\/Hz. Further, it can be used for broadband detection between 215 GHz and 232 GHz with a voltage responsivity of more than 3.4 kV\/W, and the response time can be up to 8 ns. Overall, the proposed device exhibits high sensitivity, large modulation frequency, and fast response, which indicates its excellent potential for detection and imaging applications in the THz range, including the detection of the 220 GHz atmospheric window.<\/jats:p>","DOI":"10.3390\/s22030933","type":"journal-article","created":{"date-parts":[[2022,1,25]],"date-time":"2022-01-25T21:07:11Z","timestamp":1643144831000},"page":"933","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4581-1547","authenticated-orcid":false,"given":"Zhen","family":"Huang","sequence":"first","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"College of Materials Science and Opto-Electronics Technology, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wei","family":"Yan","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5986-6456","authenticated-orcid":false,"given":"Zhaofeng","family":"Li","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hui","family":"Dong","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230026, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fuhua","family":"Yang","sequence":"additional","affiliation":[{"name":"Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0426-1358","authenticated-orcid":false,"given":"Xiaodong","family":"Wang","sequence":"additional","affiliation":[{"name":"Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"},{"name":"Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China"},{"name":"Beijing Academy of Quantum Information Science, Beijing 100193, China"},{"name":"Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,1,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"13","DOI":"10.17858\/jmisci.58124","article-title":"Terahertz technology for military applications","volume":"3","author":"Ergun","year":"2015","journal-title":"J. Manag. Inf. Sci."},{"key":"ref_2","first-page":"11","article-title":"Towards future THz communications systems","volume":"5","year":"2012","journal-title":"Terahertz Sci. Technol."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"380","DOI":"10.1109\/16.485650","article-title":"Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid","volume":"43","author":"Dyakonov","year":"1996","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"675","DOI":"10.1063\/1.1775034","article-title":"Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors","volume":"85","author":"Knap","year":"2004","journal-title":"Appl. Phys. Lett."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"021102","DOI":"10.1063\/1.4993434","article-title":"A flexible graphene terahertz detector","volume":"111","author":"Yang","year":"2017","journal-title":"Appl. Phys. Lett."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"153504","DOI":"10.1063\/1.3573825","article-title":"High-responsivity terahertz detection by on-chip InGaAs\/GaAs field-effect-transistor array","volume":"98","author":"Popov","year":"2011","journal-title":"Appl. Phys. Lett."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"251114","DOI":"10.1063\/1.4885499","article-title":"Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics","volume":"104","author":"Kurita","year":"2014","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"173513","DOI":"10.1063\/1.4705306","article-title":"Probing and modelling the localized self-mixing in a GaN\/AlGaN field-effect terahertz detector","volume":"100","author":"Sun","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Tanigawa, T., Onishi, T., Takigawa, S., and Otsuji, T. (2010, January 21\u201323). Enhanced responsivity in a novel AlGaN\/GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements. Proceedings of the IEEE 68th Device Research Conference, Notre Dame, IN, USA.","DOI":"10.1109\/DRC.2010.5551895"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"116","DOI":"10.1016\/j.optmat.2018.05.050","article-title":"Performances enhancement of metamaterial loop antenna for terahertz applications","volume":"82","author":"Labidi","year":"2018","journal-title":"Opt. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","unstructured":"Huang, Z., Li, Z., Dong, H., Yang, F., Yan, W., and Wang, X. (2021). Novel Broadband Slot-Spiral Antenna for Terahertz Applications. Photonics, 8.","DOI":"10.3390\/photonics8040123"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"1413","DOI":"10.1109\/LED.2018.2859300","article-title":"Broadband terahertz power detectors based on 90-nm silicon CMOS transistors with flat responsivity up to 2.2 THz","volume":"39","author":"Ikamas","year":"2018","journal-title":"IEEE Electron Device Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"013506","DOI":"10.1063\/1.3673617","article-title":"High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor","volume":"100","author":"Sun","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"9346","DOI":"10.1063\/1.1468257","article-title":"Nonresonant detection of terahertz radiation in field effect transistors","volume":"91","author":"Knap","year":"2002","journal-title":"J. Appl. Phys."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"014101","DOI":"10.7567\/APEX.10.014101","article-title":"A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas","volume":"10","author":"Hou","year":"2016","journal-title":"Appl. Phys. Express"},{"key":"ref_16","first-page":"1","article-title":"Analysis of substrate effect in field effect transistor terahertz detectors","volume":"23","author":"Zhang","year":"2016","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"1647","DOI":"10.1364\/OL.43.001647","article-title":"Graphene-based broadband terahertz detector integrated with a square-spiral antenna","volume":"43","author":"Guo","year":"2018","journal-title":"Opt. Lett."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"182","DOI":"10.1016\/j.sse.2007.08.002","article-title":"Field effect transistor as ultrafast detector of modulated terahertz radiation","volume":"52","author":"Kachorovskii","year":"2008","journal-title":"Solid-State Electron."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"114","DOI":"10.1038\/nnano.2011.243","article-title":"Ultrafast hot-carrier-dominated photocurrent in graphene","volume":"7","author":"Sun","year":"2012","journal-title":"Nat. Nanotechnol."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"4305","DOI":"10.1021\/nl4020777","article-title":"Fast energy relaxation of hot carriers near the dirac point of graphene","volume":"13","author":"Somphonsane","year":"2013","journal-title":"Nano Lett."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"203503","DOI":"10.1063\/1.2204842","article-title":"Terahertz imaging with a direct detector based on superconducting tunnel junctions","volume":"88","author":"Ariyoshi","year":"2006","journal-title":"Appl. Phys. Lett."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"430","DOI":"10.1109\/TTHZ.2019.2917782","article-title":"A high-sensitivity AlGaN\/GaN HEMT terahertz detector with integrated broadband bow-tie antenna","volume":"9","author":"Bauer","year":"2019","journal-title":"IEEE Trans. Terahertz Sci. Technol."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"051705","DOI":"10.1063\/1.5011392","article-title":"Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses","volume":"3","author":"Lisauskas","year":"2018","journal-title":"APL Photonics"},{"key":"ref_24","doi-asserted-by":"crossref","unstructured":"Wu, K., Ducournau, G., and Hella, M.M. (2019, January 1\u20136). A 240 GHz receiver with 6 Gb\/s data rate based on plasma wave detection in SiGe technology. Proceedings of the 2019 IEEE 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France.","DOI":"10.1109\/IRMMW-THz.2019.8873996"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"164503","DOI":"10.1063\/1.4826364","article-title":"Uncooled detector challenges: Millimeter-wave and terahertzong channel field effect transistor and Schottky barrier diode detectors","volume":"114","author":"Sakhno","year":"2013","journal-title":"J. Appl. Phys."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/3\/933\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T22:07:37Z","timestamp":1760134057000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/3\/933"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,1,25]]},"references-count":25,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2022,2]]}},"alternative-id":["s22030933"],"URL":"https:\/\/doi.org\/10.3390\/s22030933","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,1,25]]}}}