{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,13]],"date-time":"2026-02-13T18:38:43Z","timestamp":1771007923397,"version":"3.50.1"},"reference-count":33,"publisher":"MDPI AG","issue":"3","license":[{"start":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T00:00:00Z","timestamp":1643155200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["60908012"],"award-info":[{"award-number":["60908012"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61575008"],"award-info":[{"award-number":["61575008"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61775007"],"award-info":[{"award-number":["61775007"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Natural Science Foundation of Beijing City","award":["4172011"],"award-info":[{"award-number":["4172011"]}]},{"name":"The Beijing Municipal Commission of Education of China","award":["040000546319525"],"award-info":[{"award-number":["040000546319525"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG\/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A\/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG\/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.<\/jats:p>","DOI":"10.3390\/s22030959","type":"journal-article","created":{"date-parts":[[2022,1,27]],"date-time":"2022-01-27T04:49:51Z","timestamp":1643258991000},"page":"959","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel"],"prefix":"10.3390","volume":"22","author":[{"given":"Jiawei","family":"Yang","sequence":"first","affiliation":[{"name":"Key Laboratory of Opto-Electronics Technology, Faculty of Information Technology, College of Electronic Science and Technology, Beijing University of Technology, Ministry of Education, Beijing 100024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yudong","family":"Liu","sequence":"additional","affiliation":[{"name":"Key Laboratory of Opto-Electronics Technology, Faculty of Information Technology, College of Electronic Science and Technology, Beijing University of Technology, Ministry of Education, Beijing 100024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haina","family":"Ci","sequence":"additional","affiliation":[{"name":"Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Energy, Soochow University, Suzhou 215006, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Feng","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Opto-Electronics Technology, Faculty of Information Technology, College of Electronic Science and Technology, Beijing University of Technology, Ministry of Education, Beijing 100024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianbo","family":"Yin","sequence":"additional","affiliation":[{"name":"Beijing Graphene Institute (BGI), Beijing 100095, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Baolu","family":"Guan","sequence":"additional","affiliation":[{"name":"Key Laboratory of Opto-Electronics Technology, Faculty of Information Technology, College of Electronic Science and Technology, Beijing University of Technology, Ministry of Education, Beijing 100024, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hailin","family":"Peng","sequence":"additional","affiliation":[{"name":"Beijing Graphene Institute (BGI), Beijing 100095, China"},{"name":"Center for Nano Chemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5554-1902","authenticated-orcid":false,"given":"Zhongfan","family":"Liu","sequence":"additional","affiliation":[{"name":"Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Energy, Soochow University, Suzhou 215006, China"},{"name":"Beijing Graphene Institute (BGI), Beijing 100095, China"},{"name":"Center for Nano Chemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,1,26]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"839","DOI":"10.1038\/nnano.2009.292","article-title":"Ultrafast graphene photodetector","volume":"4","author":"Xia","year":"2009","journal-title":"Nat. Nanotechnol."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"021113","DOI":"10.1063\/1.4813621","article-title":"Ultrafast graphene-based broadband THz detector","volume":"103","author":"Mittendorff","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"865","DOI":"10.1038\/nmat3417","article-title":"Graphene field-effect transistors as room-temperature terahertz detectors","volume":"11","author":"Vicarelli","year":"2012","journal-title":"Nat. Mater."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"273","DOI":"10.1038\/nnano.2014.31","article-title":"Graphene photodetectors with ultra-broadband and high responsivity at room temperature","volume":"9","author":"Liu","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"1308","DOI":"10.1126\/science.1156965","article-title":"Fine structure constant defines visual transparency of graphene","volume":"320","author":"Nair","year":"2008","journal-title":"Science"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"1801182","DOI":"10.1002\/smll.201801182","article-title":"Gate-Controlled Graphene\u2013Silicon Schottky Junction Photodetector","volume":"14","author":"Chang","year":"2018","journal-title":"Small"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"906","DOI":"10.1038\/ncomms1911","article-title":"Light\u2013matter interaction in a microcavity-controlled graphene transistor","volume":"3","author":"Engel","year":"2012","journal-title":"Nat. Commun."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"1814","DOI":"10.1021\/nl200522t","article-title":"Plasmon resonance in individual nanogap electrodes studied using graphene nanoconstrictions as photodetectors","volume":"11","author":"Shi","year":"2011","journal-title":"Nano Lett."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"5202","DOI":"10.1021\/nl302322t","article-title":"Electrically tunable damping of plasmonic resonances with graphene","volume":"12","author":"Emani","year":"2012","journal-title":"Nano Lett."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"892","DOI":"10.1038\/nphoton.2013.240","article-title":"CMOS-compatible graphene photodetector covering all optical communication bands","volume":"7","author":"Pospischil","year":"2013","journal-title":"Nat. Photonics"},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"888","DOI":"10.1038\/nphoton.2013.241","article-title":"Bin High-responsivity graphene\/silicon-heterostructure waveguide photodetectors","volume":"7","author":"Wang","year":"2013","journal-title":"Nat. Photonics"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"363","DOI":"10.1038\/nnano.2012.60","article-title":"Hybrid graphene\u2013quantum dot phototransistors with ultrahigh gain","volume":"7","author":"Konstantatos","year":"2012","journal-title":"Nat. Nanotechnol."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"8372","DOI":"10.1039\/c2jm16565a","article-title":"Graphene\u2013nanowire hybrid structures for high-performance photoconductive devices","volume":"22","author":"Lee","year":"2012","journal-title":"J. Mater. Chem."},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"201103","DOI":"10.1063\/1.4829756","article-title":"GaN nanowire ultraviolet photodetector with a graphene transparent contact","volume":"103","author":"Babichev","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"952","DOI":"10.1038\/nnano.2013.219","article-title":"Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials","volume":"8","author":"Yu","year":"2013","journal-title":"Nat. Nanotechnol."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"6288","DOI":"10.1038\/srep06288","article-title":"Sulfurization induced surface constitution and its correlation to the performance of solution-processed Cu2ZnSn(S,Se)4 solar cells","volume":"4","author":"Zhong","year":"2014","journal-title":"Sci. Rep."},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"780","DOI":"10.1038\/nnano.2014.215","article-title":"Photodetectors based on graphene, other two-dimensional materials and hybrid systems","volume":"9","author":"Koppens","year":"2014","journal-title":"Nat. Nanotechnol."},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"6020","DOI":"10.1039\/C7NR00573C","article-title":"High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes","volume":"9","author":"Shen","year":"2017","journal-title":"Nanoscale"},{"key":"ref_19","doi-asserted-by":"crossref","unstructured":"Chen, J., Bo, Z., and Lu, G. (2015). The Properties of Vertically-Oriented Graphene BT\u2014Vertically-Oriented Graphene: PECVD Synthesis and Applications, Springer International Publishing.","DOI":"10.1007\/978-3-319-15302-5"},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"2108","DOI":"10.1039\/C4CS00352G","article-title":"Emerging energy and environmental applications of vertically-oriented graphenes","volume":"44","author":"Bo","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"6915","DOI":"10.1021\/acsanm.0c01258","article-title":"Graphene Quantum Dot-Decorated Vertically Oriented Graphene\/Germanium Heterojunctions for Near-Infrared Photodetectors","volume":"3","author":"Zhu","year":"2020","journal-title":"ACS Appl. Nano Mater."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"110574","DOI":"10.1016\/j.chemphys.2019.110574","article-title":"Silicon carbide nanowire covered by vertically oriented graphene for enhanced electromagnetic wave absorption performance","volume":"529","author":"Zhao","year":"2020","journal-title":"Chem. Phys."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"35328","DOI":"10.1021\/acsami.0c08036","article-title":"Vertically aligned graphene prepared by photonic annealing for ultrasensitive biosensors","volume":"12","author":"Wang","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"1696","DOI":"10.1038\/srep01696","article-title":"Direct growth of vertically-oriented graphene for field-effect transistor biosensor","volume":"3","author":"Mao","year":"2013","journal-title":"Sci. Rep."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"2904","DOI":"10.1021\/nn300261t","article-title":"Toward single-DNA electrochemical biosensing by graphene nanowalls","volume":"6","author":"Akhavan","year":"2012","journal-title":"ACS Nano"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"537","DOI":"10.1021\/jz200087w","article-title":"Patterning vertically oriented graphene sheets for nanodevice applications","volume":"2","author":"Yu","year":"2011","journal-title":"J. Phys. Chem. Lett."},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"15606","DOI":"10.1021\/acsami.0c02485","article-title":"Interface Engineering-Assisted 3D-Graphene\/Germanium Heterojunction for High-Performance Photodetectors","volume":"12","author":"Zhao","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"770","DOI":"10.1039\/C2TA00234E","article-title":"Direct PECVD growth of vertically erected graphene walls on dielectric substrates as excellent multifunctional electrodes","volume":"1","author":"Yang","year":"2013","journal-title":"J. Mater. Chem. A"},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"1900098","DOI":"10.1002\/lpor.201900098","article-title":"Mid-Infrared Photonics Using 2D Materials: Status and Challenges","volume":"14","author":"Fang","year":"2020","journal-title":"Laser Photonics Rev."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"3106","DOI":"10.1007\/s12274-017-1839-1","article-title":"6-inch uniform vertically-oriented graphene on soda-lime glass for photothermal applications","volume":"11","author":"Ci","year":"2018","journal-title":"Nano Res."},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"549","DOI":"10.1002\/smll.201670021","article-title":"Graphene: High Detectivity Graphene-Silicon Heterojunction Photodetector (Small 5\/2016)","volume":"12","author":"Li","year":"2016","journal-title":"Small"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"40904","DOI":"10.1038\/srep40904","article-title":"Silicon-graphene conductive photodetector with ultra-high responsivity","volume":"7","author":"Liu","year":"2017","journal-title":"Sci. Rep."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"011905","DOI":"10.1063\/1.3536531","article-title":"Structure and characteristics of ultrathin indium tin oxide films","volume":"98","author":"Guo","year":"2011","journal-title":"Appl. Phys. Lett."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/3\/959\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T22:08:15Z","timestamp":1760134095000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/3\/959"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,1,26]]},"references-count":33,"journal-issue":{"issue":"3","published-online":{"date-parts":[[2022,2]]}},"alternative-id":["s22030959"],"URL":"https:\/\/doi.org\/10.3390\/s22030959","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,1,26]]}}}