{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T14:18:40Z","timestamp":1775485120095,"version":"3.50.1"},"reference-count":27,"publisher":"MDPI AG","issue":"4","license":[{"start":{"date-parts":[[2022,2,9]],"date-time":"2022-02-09T00:00:00Z","timestamp":1644364800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>The effect of an external electric field and dissipative tunneling on the spectral intensity of recombination radiation in a quantum dot with an A+ + e impurity complex (a hole localized on a neutral acceptor interacting with an electron localized in the ground state of the quantum dot) is studied in the zero-radius potential model in the adiabatic approximation. The probability of dissipative tunneling of a hole is calculated in the one-instanton approximation. A high sensitivity of the recombination radiation intensity to the strength of the external electric field and to such parameters of the surrounding matrix (dissipative tunneling parameters) as temperature, the constant of interaction with the contact medium (or the heat-bath), and the frequency of phonon modes, has been revealed. It is shown that an external electric field leads to a shift of the recombination radiation threshold by several tens of meV, and a change in the parameters of dissipative tunneling has a noticeable effect on the spectral intensity of recombination radiation. It is shown that the resonant tunneling effect manifests itself in the form of \u201cdips\u201d in the field dependence of the spectral intensity of recombination radiation, which occur at certain values of the external electric field strength and temperature. This opens up certain prospects for the use of the considered system \u201cquantum dot\u2014impurity complex A+ + e\u201d under conditions of dissipative tunneling for the study and diagnostics of biological objects.<\/jats:p>","DOI":"10.3390\/s22041300","type":"journal-article","created":{"date-parts":[[2022,2,8]],"date-time":"2022-02-08T23:42:20Z","timestamp":1644363740000},"page":"1300","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots"],"prefix":"10.3390","volume":"22","author":[{"given":"Vladimir D.","family":"Krevchik","sequence":"first","affiliation":[{"name":"Faculty of Information Technology and Electronics, Penza State University, 440026 Penza, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Aleksei V.","family":"Razumov","sequence":"additional","affiliation":[{"name":"Faculty of Information Technology and Electronics, Penza State University, 440026 Penza, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mikhail B.","family":"Semenov","sequence":"additional","affiliation":[{"name":"Faculty of Information Technology and Electronics, Penza State University, 440026 Penza, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Saygid U.","family":"Uvaysov","sequence":"additional","affiliation":[{"name":"MIREA\u2014Russian Technological University, 119454 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vladimir P.","family":"Kulagin","sequence":"additional","affiliation":[{"name":"MIREA\u2014Russian Technological University, 119454 Moscow, Russia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9032-9285","authenticated-orcid":false,"given":"Pawe\u0142","family":"Komada","sequence":"additional","affiliation":[{"name":"Department of Electronics and Information Technologies, Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Saule","family":"Smailova","sequence":"additional","affiliation":[{"name":"D. Serikbayev East Kazakhstan Technical University, 69 Protozanov Str., Ust-Kamenogorsk 070004, Kazakhstan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Aisha","family":"Mussabekova","sequence":"additional","affiliation":[{"name":"Academy of Logistics and Transport, 97 Shevchenko Str., Almaty 050012, Kazakhstan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,2,9]]},"reference":[{"key":"ref_1","unstructured":"Leggett, A.J. (2011\u20132012). Controllable Dissipative Tunneling, Fizmatlit. Tunnel Transport in Low-Dimensional Systems."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"392","DOI":"10.1134\/S0021364016180016","article-title":"Phonon assisted resonant tunnelling and its phonons control","volume":"104","author":"Filatov","year":"2016","journal-title":"JETP Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"1717","DOI":"10.1134\/S1063784220110249","article-title":"Features of Two-Dimensional Bifurcations during Dissipative Electron Tunneling in Arrays of Au Nanoparticles","volume":"65","author":"Semenov","year":"2020","journal-title":"Tech. Phys."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"012016","DOI":"10.1088\/1742-6596\/1851\/1\/012016","article-title":"Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer","volume":"1851","author":"Krevchik","year":"2021","journal-title":"J. Phys. Conf. Ser."},{"key":"ref_5","unstructured":"Smyntyna, V.A. (2015). Non-Equilibrium Processes in Sensor Nanostructures, CRC Press."},{"key":"ref_6","first-page":"1043","article-title":"Energy spectrum and lifetime of charge carriers in open quantum dots in an electric field","volume":"135","author":"Zegrya","year":"2009","journal-title":"J. Exp. Theor. Phys."},{"key":"ref_7","first-page":"75","article-title":"A new method for diagnosing amino acids using semiconductor quantum dots","volume":"32","author":"Zegrya","year":"2006","journal-title":"Lett. J. Tech. Phys."},{"key":"ref_8","unstructured":"Aryngazin, A.K., Pyataev, N.A., Sukhorukov, G., Krevchik, V.D., Semenov, M.B., Shorokhov, A.V., and Filatov, D.O. (2015). Patent for Invention Preparations for Photodynamic Therapy and Treatment of Tumors. (No. 1478.1), Republic of Kazakhstan."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"631","DOI":"10.7150\/thno.4308","article-title":"Quantum dot enabled molecular sensing and diagnostics","volume":"2","author":"Zhang","year":"2012","journal-title":"Theranostics"},{"key":"ref_10","unstructured":"Slyusarenko, N.V. (2018). Optical Properties of Submicron Composites Obtained by self-Assembly of Colloidal Quantum Dots and Differently Charged Biopolymers. [Ph.D. Thesis, Krasnoyarsk State University]."},{"key":"ref_11","first-page":"S222","article-title":"Energy structure of A+\u2014Centers in quantum wells","volume":"38","author":"Avirkiev","year":"2004","journal-title":"FTP"},{"key":"ref_12","first-page":"850","article-title":"Molecular state of the A+ center in GaAs\/ AlGaAs quantum wells","volume":"41","author":"Petrov","year":"2007","journal-title":"FTP"},{"key":"ref_13","first-page":"115","article-title":"Temperature dependence of the photoluminescence intensity of self-organized CdTe quantum dots in a ZnTe matrix under different excitation conditions","volume":"54","author":"Reznitsky","year":"2012","journal-title":"PSS"},{"key":"ref_14","first-page":"611","article-title":"Equation of temperature dependence for photoluminescence of semiconductor quantum dots","volume":"56","author":"Biryukov","year":"2014","journal-title":"PSS"},{"key":"ref_15","first-page":"1570","article-title":"Temperature dependence for photoluminescence of semiconductor quantum dots under indirect excitation in a SiO2 dielectric matrix","volume":"57","author":"Zatsepin","year":"2015","journal-title":"PSS"},{"key":"ref_16","first-page":"9","article-title":"Investigation of the temperature coefficient for energy of the forbidden zone of semiconductor nanostructures CdSe1-xSx","volume":"42","author":"Sedrakyan","year":"2007","journal-title":"Bull. Natl. Acad. Sci. Armen. Phys."},{"key":"ref_17","first-page":"40","article-title":"Influence of temperature on the semiconductor band gap","volume":"9","author":"Gulyamov","year":"2011","journal-title":"FIP PSE"},{"key":"ref_18","unstructured":"Ridley, B. (1986). Quantum Processes in Semiconductors, OUP Oxford."},{"key":"ref_19","first-page":"339","article-title":"Dimensional and temperature dependences of the band gap of cadmium selenide quantum dots in fluorophosphate glasses","volume":"51","author":"Lipatova","year":"2017","journal-title":"PTS"},{"key":"ref_20","unstructured":"Cardona, M., and Yu, P.Y. (2002). Fundamentals of Semiconductors Physics, Fizmatlit."},{"key":"ref_21","first-page":"994","article-title":"On the applicability of the empirical Varshni relation for the temperature dependence of the band gap","volume":"41","author":"Weinstein","year":"1999","journal-title":"PSS"},{"key":"ref_22","first-page":"292","article-title":"Quantization of the energy spectrum of holes in the electron adiabatic potential","volume":"43","author":"Ekimov","year":"1986","journal-title":"Lett. ZhETF"},{"key":"ref_23","first-page":"1225","article-title":"Anisotropy of magneto-optical absorption of complexes quantum dot-impurity center","volume":"36","author":"Krevchik","year":"2002","journal-title":"PTS"},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"375","DOI":"10.1088\/6102\/44\/2\/375","article-title":"Electronic and shallow impurity states in semiconductor heterostructures under an applied electric field","volume":"44","author":"Zhou","year":"2005","journal-title":"Commun. Theor. Phys."},{"key":"ref_25","first-page":"331","article-title":"Kinetics of diffusive decomposition of the supersaturated solid solutions","volume":"35","author":"Lifshitz","year":"1959","journal-title":"Sov. Phys. JETP"},{"key":"ref_26","first-page":"955","article-title":"Low-temperature chemical reactions as tunnel systems with dissipation","volume":"92","author":"Dakhnovsky","year":"1987","journal-title":"ZhETF"},{"key":"ref_27","first-page":"772","article-title":"Interband Absorption of Light in a Semiconductor Sphere, Soviet Physics","volume":"16","author":"Efros","year":"1982","journal-title":"Semiconductors"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/4\/1300\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T22:16:34Z","timestamp":1760134594000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/4\/1300"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,2,9]]},"references-count":27,"journal-issue":{"issue":"4","published-online":{"date-parts":[[2022,2]]}},"alternative-id":["s22041300"],"URL":"https:\/\/doi.org\/10.3390\/s22041300","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,2,9]]}}}