{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T08:00:48Z","timestamp":1768723248878,"version":"3.49.0"},"reference-count":29,"publisher":"MDPI AG","issue":"5","license":[{"start":{"date-parts":[[2022,2,25]],"date-time":"2022-02-25T00:00:00Z","timestamp":1645747200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical\u2013physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 \u00b0C. At 80 \u00b0C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV\/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at \u221254.6 mV\/pH at 80 \u00b0C by combining it with a highly pH sensitive stainless-steel vessel.<\/jats:p>","DOI":"10.3390\/s22051807","type":"journal-article","created":{"date-parts":[[2022,2,27]],"date-time":"2022-02-27T20:48:33Z","timestamp":1645994913000},"page":"1807","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors"],"prefix":"10.3390","volume":"22","author":[{"given":"Shuto","family":"Kawaguchi","sequence":"first","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Reona","family":"Nomoto","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hirotaka","family":"Sato","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Teruaki","family":"Takarada","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu Hao","family":"Chang","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hiroshi","family":"Kawarada","sequence":"additional","affiliation":[{"name":"Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan"},{"name":"The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,2,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"70","DOI":"10.1109\/TBME.1970.4502688","article-title":"Development of an ion-sensitive solid-state device for neurophysiological measurements","volume":"1","author":"Bergveld","year":"1970","journal-title":"IEEE Trans. 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