{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,12]],"date-time":"2026-08-12T15:48:43Z","timestamp":1786549723951,"version":"3.56.0"},"reference-count":15,"publisher":"MDPI AG","issue":"7","license":[{"start":{"date-parts":[[2022,3,25]],"date-time":"2022-03-25T00:00:00Z","timestamp":1648166400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>Laser-induced camera damage thresholds were measured for several sensors of three different sensor architectures using a Q-switched Nd:YAG laser in order to determine their pulsed laser-induced damage thresholds. Charge coupled device (CCD), front-side illuminated complimentary metal-oxide semiconductor (FSI CMOS), and back-side illuminated (BSI) CMOS sensors were assessed under laboratory and outdoor environments by increasing the focused laser intensity onto the sensors and recording the sensor output. The damage sites were classified qualitatively into damage types, and pixel counting methods were applied to quantitatively plot damage scale against laser intensity. Probit-fits were applied to find the intensity values where a 95% probability of damage would occur (FD95) and showed that FD95 was approximately the same under laboratory conditions for CCD, FSI CMOS, and BSI CMOS sensors (mean 532 nm FD95 of 0.077 \u00b1 0.01 Jcm\u22122). BSI CMOS sensors were the most robust to large-scale damage effects\u2014BSI sensor kill was found at approximately 103 Jcm\u22122, compared to 10 Jcm\u22122 for FSI CMOS, and between ~1.6 and 2.7 Jcm\u22122 for CCDs.<\/jats:p>","DOI":"10.3390\/s22072526","type":"journal-article","created":{"date-parts":[[2022,3,27]],"date-time":"2022-03-27T21:31:25Z","timestamp":1648416685000},"page":"2526","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":22,"title":["Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays"],"prefix":"10.3390","volume":"22","author":[{"given":"Christopher","family":"Westgate","sequence":"first","affiliation":[{"name":"Defence Science and Technology Laboratory, Porton Down, Salisbury SP4 0JQ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"David","family":"James","sequence":"additional","affiliation":[{"name":"Defence Academy of the United Kingdom, Cranfield University, Swindon SN6 8LA, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,3,25]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"F39","DOI":"10.1364\/AO.423791","article-title":"Impact of threshold assessment methods in laser-induced damage measurements using the examples of CCD, CMOS, and DMD","volume":"60","author":"Schwarz","year":"2021","journal-title":"Appl. Opt."},{"key":"ref_2","doi-asserted-by":"crossref","unstructured":"Schwarz, B., Ritt, G., K\u00f6rber, M., and Eberle, B. (2016, January 28\u201329). Laser-induced damage threshold of camera sensors and micro-opto-electro-mechanical systems. Proceedings of the SPIE 9987, Electro-Optical and Infrared Systems: Technology and Applications XIII, Edinburgh, UK.","DOI":"10.1117\/12.2241057"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"034108","DOI":"10.1117\/1.OE.56.3.034108","article-title":"Laser-induced damage threshold of camera sensors and micro-optoelectromechanical systems","volume":"56","author":"Schwarz","year":"2017","journal-title":"Opt. Eng."},{"key":"ref_4","doi-asserted-by":"crossref","unstructured":"Schwarz, B., K\u00f6rber, M., Ritt, G., and Eberle, B. (2019, January 10\u201311). Further investigation on laser-induced damage thresholds of camera sensors and micro-optomechanical systems. 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