{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,9]],"date-time":"2026-05-09T16:52:22Z","timestamp":1778345542402,"version":"3.51.4"},"reference-count":20,"publisher":"MDPI AG","issue":"9","license":[{"start":{"date-parts":[[2022,4,19]],"date-time":"2022-04-19T00:00:00Z","timestamp":1650326400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"This was supported by Institute of Information &amp; communications Technology Planning &amp; Evaluation (IITP) grant funded by Korea government (MSIT)(No.2021-0-00198, Development of key technologies for 6G RF front-end based on low-power MIMO and highly efficie","award":["No.2021-0-00198"],"award-info":[{"award-number":["No.2021-0-00198"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>We present a W-band 8-way wideband power amplifier (PA) for a high precision frequency modulated continuous wave (FMCW) radar in 65-nm CMOS technology. To achieve a broadband operation with an improved output power for a high range resolution and high distance coverage of FMCW radar sensors, a balanced architecture is employed with the Lange coupler which naturally combines the output powers from two 4-way push-pull PAs. By utilizing a transformer-based push-pull structure with a cross-coupled capacitive neutralization technique, the gate-drain capacitance of the 4-way PA is compensated for the stabilization with an improved power gain. Interstage matching was performed with transformers for a reduced loss from the matching network and minimal area occupation. The implemented balanced 8-way PA achieved a saturated output power (Psat) of 16.5 dBm, a 1-dB compressed output power (OP1dB) of 13.3 dBm, a power-added efficiency (PAE) of 9.9% at 90 GHz and 3-dB power bandwidth was 20.4 GHz (79.2\u201399.6 GHz).<\/jats:p>","DOI":"10.3390\/s22093114","type":"journal-article","created":{"date-parts":[[2022,4,20]],"date-time":"2022-04-20T00:22:43Z","timestamp":1650414163000},"page":"3114","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["A 90 GHz Broadband Balanced 8-Way Power Amplifier for High Precision FMCW Radar Sensors in 65-nm CMOS"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7884-5391","authenticated-orcid":false,"given":"Hyeonseok","family":"Lee","sequence":"first","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Van-Son","family":"Trinh","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4733-2160","authenticated-orcid":false,"given":"Jung-Dong","family":"Park","sequence":"additional","affiliation":[{"name":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,4,19]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"1195","DOI":"10.1109\/TMTT.2019.2955127","article-title":"Versatile Dual-Receiver 94-GHz FMCW Radar System with High Output Power and 26-GHz Tuning Range for High Distance Applications","volume":"68","author":"Welp","year":"2020","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1109\/LMWC.2019.2937986","article-title":"A 55-64-GHz Fully Integrated Miniaturized FMCW Radar Sensor Module for Short-Range Applications","volume":"29","author":"Milosavljevic","year":"2019","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_3","unstructured":"Asada, H., Matsushita, K., Bunsen, K., Okada, K., and Matsuzawa, A. (2011, January 10\u201313). A 60GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16 % PAE. Proceedings of the 2011 6th European Microwave Integrated Circuit Conference, Manchester, UK."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"57","DOI":"10.1109\/TMTT.2009.2036323","article-title":"A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS","volume":"58","author":"Pornpromlikit","year":"2010","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_5","doi-asserted-by":"crossref","first-page":"391","DOI":"10.1109\/TTHZ.2014.2315451","article-title":"77-110 GHz 65-nm CMOS Power Amplifier Design","volume":"4","author":"Wu","year":"2014","journal-title":"IEEE Trans. Terahertz Sci. Technol."},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"4520","DOI":"10.1109\/TMTT.2013.2288223","article-title":"Millimeter-Wave CMOS Power Amplifiers with High Output Power and Wideband Performances","volume":"61","author":"Hsiao","year":"2013","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"719","DOI":"10.1109\/TMTT.2014.2387286","article-title":"A W-Band Power Amplifier Utilizing a Miniaturized Marchand Balun Combiner","volume":"63","author":"Jia","year":"2015","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"78","DOI":"10.1109\/LMWC.2019.2952007","article-title":"A 26.4-dB Gain 15.82-dBm 77-GHz CMOS Power Amplifier with 15.9%; PAE Using Transformer-Based Quadrature Coupler Network","volume":"30","author":"Chen","year":"2020","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_9","doi-asserted-by":"crossref","unstructured":"Sandstrom, D., Martineau, B., Varonen, M., Karkkainen, M., Cathelin, A., and Halonen, K.A. (2011, January 5\u20137). 94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS. Proceedings of the 2011 IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, MD, USA.","DOI":"10.1109\/RFIC.2011.5940691"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"1365","DOI":"10.1109\/TMTT.2012.2187536","article-title":"Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS","volume":"60","author":"Gu","year":"2012","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"510","DOI":"10.1109\/LMWC.2016.2574834","article-title":"A 109 GHz CMOS Power Amplifier with 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology","volume":"26","author":"Son","year":"2016","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"193","DOI":"10.1109\/LMWC.2020.2965101","article-title":"A 16.3 dBm 14.1% PAE 28-dB Gain W-Band Power Amplifier with Inductive Feedback in 65-nm CMOS","volume":"30","author":"Trinh","year":"2020","journal-title":"IEEE Microw. Wirel. Compon. Lett."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"882","DOI":"10.1109\/JSSC.2021.3136390","article-title":"An 85-GHz Power Amplifier Utilizing a Transformer-Based Power Combiner Operating beyond the Self-Resonance Frequency","volume":"57","author":"Trinh","year":"2022","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"1368","DOI":"10.1109\/4.868049","article-title":"Monolithic transformers for silicon RF IC design","volume":"35","author":"Long","year":"2000","journal-title":"IEEE J. Solid-State Circuits"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"901","DOI":"10.1109\/TMTT.2014.2300033","article-title":"Theory of Image Impedance Matching for Inductively Coupled Power Transfer Systems","volume":"62","author":"Inagaki","year":"2014","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"140980","DOI":"10.1109\/ACCESS.2019.2943512","article-title":"Theory and Design of Impedance Matching Network Utilizing a Lossy On-Chip Transformer","volume":"7","author":"Trinh","year":"2019","journal-title":"IEEE Access"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"237","DOI":"10.1109\/PROC.1965.3681","article-title":"A Wide-Band Low Noise L-Band Balanced Transistor Amplifier","volume":"53","author":"Engelbrecht","year":"1965","journal-title":"Proc. IEEE"},{"key":"ref_18","doi-asserted-by":"crossref","unstructured":"Xue, Y., Shi, C., Chen, G., Chen, J., and Zhang, R. (2020, January 4\u20136). Two W-Band Wideband CMOS MMW PAs for Automotive Radar Transceivers. Proceedings of the 2020 IEEE\/MTT-S International Microwave Symposium (IMS), Los Angeles, CA, USA.","DOI":"10.1109\/IMS30576.2020.9223962"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"1870","DOI":"10.1109\/TMTT.2012.2193593","article-title":"Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI","volume":"60","author":"Kim","year":"2012","journal-title":"IEEE Trans. Microw. Theory Tech."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1109\/LMWC.2010.2056675","article-title":"A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique","volume":"20","author":"Lin","year":"2010","journal-title":"IEEE Microw. Wirel. Compon. Lett."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/9\/3114\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T22:56:36Z","timestamp":1760136996000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/9\/3114"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,4,19]]},"references-count":20,"journal-issue":{"issue":"9","published-online":{"date-parts":[[2022,5]]}},"alternative-id":["s22093114"],"URL":"https:\/\/doi.org\/10.3390\/s22093114","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,4,19]]}}}