{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,30]],"date-time":"2026-03-30T12:34:52Z","timestamp":1774874092432,"version":"3.50.1"},"reference-count":54,"publisher":"MDPI AG","issue":"10","license":[{"start":{"date-parts":[[2022,5,21]],"date-time":"2022-05-21T00:00:00Z","timestamp":1653091200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"name":"CONACyT-CB-255062"},{"name":"VIEP-LULJ-EXC-2021"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of \u22124 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 \u03bcA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-\u03bb) measurements, exhibited a maximum responsivity value at 254 mA\/W, specific detectivity (D*) at 2.21 \u00d7 1011 cm\u2009Hz1\/2\u2009W\u22121, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.<\/jats:p>","DOI":"10.3390\/s22103904","type":"journal-article","created":{"date-parts":[[2022,5,21]],"date-time":"2022-05-21T09:18:08Z","timestamp":1653124688000},"page":"3904","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":10,"title":["MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5451-9770","authenticated-orcid":false,"given":"Gabriel Omar","family":"Mendoza Conde","sequence":"first","affiliation":[{"name":"Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7647-3184","authenticated-orcid":false,"given":"Jos\u00e9 Alberto","family":"Luna L\u00f3pez","sequence":"additional","affiliation":[{"name":"Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4185-4101","authenticated-orcid":false,"given":"Zaira Jocelyn","family":"Hern\u00e1ndez Sim\u00f3n","sequence":"additional","affiliation":[{"name":"Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7913-0240","authenticated-orcid":false,"given":"Jos\u00e9 \u00c1lvaro David","family":"Hern\u00e1ndez de la Luz","sequence":"additional","affiliation":[{"name":"Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico"}]},{"given":"Godofredo","family":"Garc\u00eda Salgado","sequence":"additional","affiliation":[{"name":"Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico"}]},{"given":"Erick","family":"Gastellou Hern\u00e1ndez","sequence":"additional","affiliation":[{"name":"Divisi\u00f3n de Sistemas Automotrices, Universidad Tecnol\u00f3gica de Puebla (UTP), Puebla 72300, Mexico"}]},{"given":"Haydee Patricia","family":"Mart\u00ednez Hern\u00e1ndez","sequence":"additional","affiliation":[{"name":"Departamento de Ingenier\u00eda El\u00e9ctrica y Electr\u00f3nica, Instituto Tecnol\u00f3gico de Apizaco (ITA), Fco I Madero s\/n, Barrio de San Jos\u00e9, Apizaco 90300, Mexico"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8815-7015","authenticated-orcid":false,"given":"Javier","family":"Flores M\u00e9ndez","sequence":"additional","affiliation":[{"name":"Facultad de Ciencias de la Electr\u00f3nica (FCE), Benem\u00e9rita Universidad Aut\u00f3noma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 18 Sur, Edificio FCE1, Puebla 72570, Mexico"}]}],"member":"1968","published-online":{"date-parts":[[2022,5,21]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","unstructured":"Hern\u00e1ndez Sim\u00f3n, Z.J., Luna L\u00f3pez, J.A., Hern\u00e1ndez De la Luz, J.A.D., P\u00e9rez Garc\u00eda, S., Ben\u00edtez Lara, A., Garc\u00eda Salgado, G., Carrillo L\u00f3pez, J., Mendoza Conde, G.O., and Mart\u00ednez Hern\u00e1ndez, H.P. (2020). Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD. Nanomaterials, 10.","DOI":"10.3390\/nano10071415"},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"604","DOI":"10.1186\/1556-276X-7-604","article-title":"Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films","volume":"7","year":"2012","journal-title":"Nanoscale Res. Lett."},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"2309","DOI":"10.1007\/s11664-016-5271-1","article-title":"Optical and Compositional Properties of SiOx Films Deposited by HFCVD: Effect of the Hydrogen Flow","volume":"46","year":"2017","journal-title":"J. Electron. Mater."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"43","DOI":"10.1016\/j.jnoncrysol.2019.05.015","article-title":"Determination of the oxygen content in amorphous SiOx thin films","volume":"518","author":"Zamchiy","year":"2019","journal-title":"J. Non-Cryst. Solids"},{"key":"ref_5","first-page":"382","article-title":"High Sensitivity Ultraviolet Light Off-Stoichiometric Silicon Oxide-Based Sensors","volume":"1","year":"2017","journal-title":"Proceedings"},{"key":"ref_6","first-page":"2087","article-title":"Down-Conversion Effect Created by SiOx Films Obtained by HFCVD and Applied over Pn-Junctions","volume":"11","year":"2018","journal-title":"Silicon"},{"key":"ref_7","doi-asserted-by":"crossref","first-page":"231105","DOI":"10.1063\/5.0001840","article-title":"Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix","volume":"116","author":"Sarkar","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"e20190401","DOI":"10.1590\/1980-5373-mr-2019-0401","article-title":"Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing","volume":"23","author":"Pang","year":"2020","journal-title":"Mater. Res."},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"40","DOI":"10.1016\/j.jlumin.2016.02.033","article-title":"Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered SRO films","volume":"176","author":"Coyopol","year":"2016","journal-title":"J. Lumin."},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"319","DOI":"10.3389\/fmats.2019.00319","article-title":"The Influence of Microstructure on Nanomechanical and Diffusion Barrier Properties of Thin PECVD SiOx Films Deposited on Parylene C Substrates","volume":"6","author":"Framil","year":"2019","journal-title":"Front. Mater."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"119796","DOI":"10.1016\/j.jnoncrysol.2019.119796","article-title":"Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx","volume":"529","author":"Perevalov","year":"2020","journal-title":"J. Non-Cryst. Solids"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"116709","DOI":"10.1016\/j.jlumin.2019.116709","article-title":"Photoluminescence comparison of SRO-LPCVD films deposited on quartz, polysilicon and silicon substrates","volume":"216","year":"2019","journal-title":"J. Lumin."},{"key":"ref_13","doi-asserted-by":"crossref","first-page":"215101","DOI":"10.1063\/1.4952730","article-title":"Electrical and electroluminescent characterization of nanometric multilayers of SiOX\/SiOY obtained by LPCVD including non-normal emisi\u00f3n","volume":"119","year":"2016","journal-title":"J. Appl. Phys."},{"key":"ref_14","doi-asserted-by":"crossref","unstructured":"Mart\u00ednez Hern\u00e1ndez, H.P., Luna L\u00f3pez, J.A., Hern\u00e1ndez De la Luz, J.A.D., Luna Flores, A., Monfil Leyva, K., Garc\u00eda Salgado, G., Carrillo L\u00f3pez, J., Ordo\u00f1ez Flores, R., P\u00e9rez Garc\u00eda, S., and Hern\u00e1ndez Sim\u00f3n, Z.J. (2020). Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon. Crystals, 10.","DOI":"10.3390\/cryst10020127"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"101411","DOI":"10.1016\/j.surfin.2021.101411","article-title":"SiOx films deposited by HFCVD: Their conduction response to light and intrinsic photovoltaic effect","volume":"26","year":"2021","journal-title":"Surf. Interfaces"},{"key":"ref_16","doi-asserted-by":"crossref","unstructured":"Curiel, M., Nedev, N., Paz, J., Perez, O., Valdez, B., and Mateos, D. (2019). UV Sensitivity of MOS Structures with Silicon Nanoclusters. Sensors, 19.","DOI":"10.3390\/s19102277"},{"key":"ref_17","doi-asserted-by":"crossref","unstructured":"Gateva, S. (2012). UV-Vis photodetector with silicon nanoparticles. Photodetectors, IntechOpen.","DOI":"10.5772\/2033"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"1296","DOI":"10.1016\/j.proeng.2016.11.349","article-title":"UV-Vis Photocurrent in SiOx Films with Silicon Nanocrystals Obtained by HFCVD","volume":"168","author":"Valerdi","year":"2016","journal-title":"Procedia Eng."},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"17412","DOI":"10.1007\/s10854-020-04297-4","article-title":"Selective photosensitivity of metal\u2013oxide\u2013semiconductor structures with SiOx layer annealed at high temperature","volume":"31","author":"Paz","year":"2020","journal-title":"J. Mater. Sci. Mater. Electron."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"333","DOI":"10.1021\/ed039p333","article-title":"The Beer-Lambert Law","volume":"39","author":"Swinehart","year":"1962","journal-title":"J. Chem. Educ."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"627","DOI":"10.1002\/pssb.19660150224","article-title":"Optical properties and electronic structure of amorphous germanium","volume":"15","author":"Tauc","year":"1966","journal-title":"Phys. Status Solidi B"},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"7934","DOI":"10.1063\/1.367973","article-title":"Annealing behaviors of photoluminescence from SiOx:H","volume":"83","author":"Ma","year":"1998","journal-title":"J. Appl. Phys."},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"2922","DOI":"10.1063\/1.1616646","article-title":"Formation of luminescent Si nanocrystals by high-temperature rapid thermal chemical vapor deposition","volume":"83","author":"Cheong","year":"2003","journal-title":"Appl. Phys. Lett."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"023501","DOI":"10.1063\/1.3169513","article-title":"Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures","volume":"106","author":"Rinnert","year":"2009","journal-title":"J. Appl. Phys."},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"4498","DOI":"10.1016\/j.tsf.2011.01.325","article-title":"Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD","volume":"519","author":"Matsumoto","year":"2011","journal-title":"Thin Solid Film."},{"key":"ref_26","first-page":"204","article-title":"Si nanocrystals deposited by HFCVD","volume":"194","year":"2013","journal-title":"Solid State Phenom."},{"key":"ref_27","first-page":"147","article-title":"Propiedades fotoluminiscentes de pel\u00edculas de SiOx crecidas por la t\u00e9cnica de HFCVD","volume":"23","author":"Coyopol","year":"2010","journal-title":"Superf. Vac\u00edo"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"578168","DOI":"10.1155\/2014\/578168","article-title":"A Review on Conduction Mechanisms in Dielectric Films","volume":"2014","author":"Chiu","year":"2014","journal-title":"Adv. Mater. Sci. Eng."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"043501","DOI":"10.1063\/1.1856144","article-title":"High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer","volume":"86","author":"Noh","year":"2005","journal-title":"Appl. Phys. Lett."},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"7231","DOI":"10.1021\/acsami.7b17935","article-title":"All-Inorganic Perovskite Nanowires\u2013InGaZnO Heterojunction for High-Performance Ultraviolet\u2013Visible Photodetectors","volume":"10","author":"Sun","year":"2018","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"106333","DOI":"10.1016\/j.spmi.2019.106333","article-title":"Enhancing responsivity and detectivity in broadband UV\u2013VIS photodetector by ex-situ UV\u2013ozone annealing technique","volume":"137","author":"Alam","year":"2020","journal-title":"Superlattices Microstruct."},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1016\/j.jallcom.2017.04.068","article-title":"Fabrication of novel transparent Co 3 O 4 -TiO 2 nanowires p-n heterojunction diodes for multiband photodetection applications","volume":"712","author":"Choudhuri","year":"2017","journal-title":"J. Alloy. Compd."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"1927","DOI":"10.1109\/LPT.2004.831271","article-title":"Thin Film Silicon Nanoparticle UV Photodetector","volume":"16","author":"Nayfeh","year":"2004","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"10286","DOI":"10.1038\/s41598-019-46711-w","article-title":"Ge nanoparticles in SiO2 for near infrared photodetectors with high performance","volume":"9","author":"Stavarache","year":"2019","journal-title":"Sci. Rep."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"5404","DOI":"10.1038\/ncomms6404","article-title":"Solution-processed hybrid perovskite photodetectors with high detectivity","volume":"5","author":"Dou","year":"2014","journal-title":"Nat. Commun."},{"key":"ref_36","doi-asserted-by":"crossref","first-page":"1023","DOI":"10.1023\/A:1023714130391","article-title":"Effects of Background Plasma on Free Electron Laser with Planar Wiggler","volume":"24","author":"Wang","year":"2003","journal-title":"Int. J. Infrared Millim. Waves"},{"key":"ref_37","doi-asserted-by":"crossref","first-page":"063706","DOI":"10.1063\/1.2875397","article-title":"Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films","volume":"103","author":"Yu","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"170","DOI":"10.1116\/1.3276781","article-title":"Photoconduction in silicon rich oxide films obtained by low pressure chemical vapor deposition","volume":"28","year":"2010","journal-title":"J. Vac. Sci. Technol. A Vac. Surf. Film."},{"key":"ref_39","unstructured":"Kiebach, R., Yu, Z., Monfil, K., Carrillo, J., and Aceves-Mijares, M. (2011). Photosensitivity and Shift of Current Oscillations at Room Temperature in Silicon Rich Oxides Under Uv\/Vis Light. Smart Nanocomposites, Nova Science Publishers, Inc."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"145","DOI":"10.1016\/j.tsf.2004.08.012","article-title":"Study of the conduction properties of silicon-rich oxide under illumination","volume":"473","author":"Yu","year":"2005","journal-title":"Thin Solid Film."},{"key":"ref_41","doi-asserted-by":"crossref","first-page":"2","DOI":"10.1007\/BF03215148","article-title":"The optical properties of gold","volume":"5","author":"Loebich","year":"1972","journal-title":"Gold Bull."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"1305","DOI":"10.1016\/j.solmat.2008.06.009","article-title":"Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients","volume":"92","author":"Green","year":"2008","journal-title":"Sol Energy Mater. Sol. Cells"},{"key":"ref_43","unstructured":"Jarrod Katz, E. (2013). Spectroscopic and Electrical Characterization of SiOx and GaN Device Structures as a Function of Irradiation. [Ph.D. Thesis, Ohio State University]."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"422","DOI":"10.1186\/1556-276X-9-422","article-title":"Compositional and optical properties of SiOx films and (SiOx\/SiOy) junctions deposited by HFCVD","volume":"9","year":"2014","journal-title":"Nanoscale Res. Lett."},{"key":"ref_45","doi-asserted-by":"crossref","first-page":"094306","DOI":"10.1063\/1.1886274","article-title":"Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2","volume":"97","author":"Lin","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"698","DOI":"10.1063\/1.119833","article-title":"Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films","volume":"71","author":"Tong","year":"1997","journal-title":"Appl. Phys. Lett."},{"key":"ref_47","first-page":"293","article-title":"Compositional and structural characterization of silicon nanoparticles embedded in silicon rich oxide","volume":"53","author":"Malik","year":"2007","journal-title":"Rev. Mex. Fis."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"83","DOI":"10.1016\/j.sna.2015.06.021","article-title":"Influence of trapping and de-trapping charge in MOS-like structures with single and twofold SiOx films as active layers","volume":"233","year":"2015","journal-title":"Sens. Actuators A"},{"key":"ref_49","doi-asserted-by":"crossref","first-page":"1583","DOI":"10.1021\/acs.nanolett.5b04256","article-title":"Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk","volume":"16","author":"Lee","year":"2016","journal-title":"Nano Lett."},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"555","DOI":"10.1109\/50.838130","article-title":"Characterization of defects in waveguides formed by electron irradiation of silica-on-silicon","volume":"18","author":"Spaargaren","year":"2000","journal-title":"J. Lightwave Technol."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"558","DOI":"10.1109\/TED.2019.2961738","article-title":"Size-Dependent Photoresponse of Germanium Nanocrystals-Metal Oxide Semiconductor Photodetector","volume":"67","author":"Dhyani","year":"2020","journal-title":"IEEE Trans. Electron Devices"},{"key":"ref_52","doi-asserted-by":"crossref","first-page":"2887","DOI":"10.1088\/0953-8984\/15\/39\/012","article-title":"Phase separation of thin SiO layers in amorphous SiO\/SiO2 superlattice during annealing","volume":"15","author":"Yi","year":"2003","journal-title":"J. Phys. Condens. Matter"},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"961","DOI":"10.1063\/1.123423","article-title":"Enhancing defect-related photoluminescence by hot implantation into SiO2 layers","volume":"74","author":"Im","year":"1999","journal-title":"Appl. Phys. Lett."},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"1727","DOI":"10.1016\/j.jnoncrysol.2005.04.005","article-title":"Effects of B and N implantation on optical absorption and photoluminescence and comparison to the effects of implanting Si, Ge, O, and Ar in silica","volume":"351","author":"Weeks","year":"2005","journal-title":"J. Non-Cryst. Solids"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/10\/3904\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T23:16:00Z","timestamp":1760138160000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/10\/3904"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5,21]]},"references-count":54,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2022,5]]}},"alternative-id":["s22103904"],"URL":"https:\/\/doi.org\/10.3390\/s22103904","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,5,21]]}}}