{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,9]],"date-time":"2026-06-09T21:08:28Z","timestamp":1781039308721,"version":"3.54.1"},"reference-count":298,"publisher":"MDPI AG","issue":"11","license":[{"start":{"date-parts":[[2022,6,1]],"date-time":"2022-06-01T00:00:00Z","timestamp":1654041600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000266","name":"Silicon-rich silicon nitride Nonlinear Integrated Photonic ciRcuits &amp; Systems (juNIPeRS)","doi-asserted-by":"publisher","award":["EP\/T007303\/1"],"award-info":[{"award-number":["EP\/T007303\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Silicon-rich silicon nitride Nonlinear Integrated Photonic ciRcuits &amp; Systems (juNIPeRS)","doi-asserted-by":"publisher","award":["EP\/T028475\/1"],"award-info":[{"award-number":["EP\/T028475\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Silicon-rich silicon nitride Nonlinear Integrated Photonic ciRcuits &amp; Systems (juNIPeRS)","doi-asserted-by":"publisher","award":["EP\/R003076\/1"],"award-info":[{"award-number":["EP\/R003076\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Silicon-rich silicon nitride Nonlinear Integrated Photonic ciRcuits &amp; Systems (juNIPeRS)","doi-asserted-by":"publisher","award":["871391"],"award-info":[{"award-number":["871391"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Silicon-rich silicon nitride Nonlinear Integrated Photonic ciRcuits &amp; Systems (juNIPeRS)","doi-asserted-by":"publisher","award":["FJC2020-042823-I"],"award-info":[{"award-number":["FJC2020-042823-I"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)","doi-asserted-by":"publisher","award":["EP\/T007303\/1"],"award-info":[{"award-number":["EP\/T007303\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)","doi-asserted-by":"publisher","award":["EP\/T028475\/1"],"award-info":[{"award-number":["EP\/T028475\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)","doi-asserted-by":"publisher","award":["EP\/R003076\/1"],"award-info":[{"award-number":["EP\/R003076\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)","doi-asserted-by":"publisher","award":["871391"],"award-info":[{"award-number":["871391"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)","doi-asserted-by":"publisher","award":["FJC2020-042823-I"],"award-info":[{"award-number":["FJC2020-042823-I"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Rockley Photonics and the University of Southampton: A Prosperity Partnership","doi-asserted-by":"publisher","award":["EP\/T007303\/1"],"award-info":[{"award-number":["EP\/T007303\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Rockley Photonics and the University of Southampton: A Prosperity Partnership","doi-asserted-by":"publisher","award":["EP\/T028475\/1"],"award-info":[{"award-number":["EP\/T028475\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Rockley Photonics and the University of Southampton: A Prosperity Partnership","doi-asserted-by":"publisher","award":["EP\/R003076\/1"],"award-info":[{"award-number":["EP\/R003076\/1"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Rockley Photonics and the University of Southampton: A Prosperity Partnership","doi-asserted-by":"publisher","award":["871391"],"award-info":[{"award-number":["871391"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100000266","name":"Rockley Photonics and the University of Southampton: A Prosperity Partnership","doi-asserted-by":"publisher","award":["FJC2020-042823-I"],"award-info":[{"award-number":["FJC2020-042823-I"]}],"id":[{"id":"10.13039\/501100000266","id-type":"DOI","asserted-by":"publisher"}]},{"name":"H2020 EU project Plasmoniac","award":["EP\/T007303\/1"],"award-info":[{"award-number":["EP\/T007303\/1"]}]},{"name":"H2020 EU project Plasmoniac","award":["EP\/T028475\/1"],"award-info":[{"award-number":["EP\/T028475\/1"]}]},{"name":"H2020 EU project Plasmoniac","award":["EP\/R003076\/1"],"award-info":[{"award-number":["EP\/R003076\/1"]}]},{"name":"H2020 EU project Plasmoniac","award":["871391"],"award-info":[{"award-number":["871391"]}]},{"name":"H2020 EU project Plasmoniac","award":["FJC2020-042823-I"],"award-info":[{"award-number":["FJC2020-042823-I"]}]},{"name":"Agencia Estatal de Investigaci\u00f3n and NextGenerationEU\/PRTR","award":["EP\/T007303\/1"],"award-info":[{"award-number":["EP\/T007303\/1"]}]},{"name":"Agencia Estatal de Investigaci\u00f3n and NextGenerationEU\/PRTR","award":["EP\/T028475\/1"],"award-info":[{"award-number":["EP\/T028475\/1"]}]},{"name":"Agencia Estatal de Investigaci\u00f3n and NextGenerationEU\/PRTR","award":["EP\/R003076\/1"],"award-info":[{"award-number":["EP\/R003076\/1"]}]},{"name":"Agencia Estatal de Investigaci\u00f3n and NextGenerationEU\/PRTR","award":["871391"],"award-info":[{"award-number":["871391"]}]},{"name":"Agencia Estatal de Investigaci\u00f3n and NextGenerationEU\/PRTR","award":["FJC2020-042823-I"],"award-info":[{"award-number":["FJC2020-042823-I"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"<jats:p>In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.<\/jats:p>","DOI":"10.3390\/s22114227","type":"journal-article","created":{"date-parts":[[2022,6,1]],"date-time":"2022-06-01T21:43:42Z","timestamp":1654119822000},"page":"4227","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":70,"title":["A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1400-3272","authenticated-orcid":false,"given":"Frederic","family":"Gardes","sequence":"first","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3095-9808","authenticated-orcid":false,"given":"Afrooz","family":"Shooa","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4074-4162","authenticated-orcid":false,"given":"Greta","family":"De Paoli","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9021-1420","authenticated-orcid":false,"given":"Ilias","family":"Skandalos","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2571-9682","authenticated-orcid":false,"given":"Stefan","family":"Ilie","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0159-152X","authenticated-orcid":false,"given":"Teerapat","family":"Rutirawut","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1375-7830","authenticated-orcid":false,"given":"Wanvisa","family":"Talataisong","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8010-0244","authenticated-orcid":false,"given":"Joaqu\u00edn","family":"Faneca","sequence":"additional","affiliation":[{"name":"Instituto de Microelectr\u00f3nica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0965-7503","authenticated-orcid":false,"given":"Valerio","family":"Vitali","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9461-3841","authenticated-orcid":false,"given":"Yaonan","family":"Hou","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3664-1403","authenticated-orcid":false,"given":"Thal\u00eda Dom\u00ednguez","family":"Bucio","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7455-1599","authenticated-orcid":false,"given":"Ioannis","family":"Zeimpekis","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9950-8642","authenticated-orcid":false,"given":"Cosimo","family":"Lacava","sequence":"additional","affiliation":[{"name":"Electrical Computer and Biomedical Engineering, University of Pavia, 27100 Pavia, Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1576-8034","authenticated-orcid":false,"given":"Periklis","family":"Petropoulos","sequence":"additional","affiliation":[{"name":"Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"1968","published-online":{"date-parts":[[2022,6,1]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"59","DOI":"10.37188\/lam.2021.005","article-title":"Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration","volume":"2","author":"Liang","year":"2021","journal-title":"Light. Adv. Manuf."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"024003","DOI":"10.1117\/1.AP.3.2.024003","article-title":"Taking silicon photonics modulators to a higher performance level: State-of-the-art and a review of new technologies","volume":"3","author":"Rahim","year":"2021","journal-title":"Adv. Photonics"},{"key":"ref_3","doi-asserted-by":"crossref","first-page":"37","DOI":"10.3389\/fphy.2015.00037","article-title":"Silicon photonic integration in telecommunications","volume":"3","author":"Doerr","year":"2015","journal-title":"Front. Phys."},{"key":"ref_4","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1364\/PRJ.4.000126","article-title":"Photonic integrated circuit components based on amorphous silicon-on-insulator technology","volume":"4","author":"Lipka","year":"2016","journal-title":"Photonics Res."},{"key":"ref_5","doi-asserted-by":"crossref","unstructured":"Worhoff, K., Klein, E., Hussein, G., and Driessen, A. (2008, January 22\u201326). Silicon oxynitride based photonics. Proceedings of the 2008 10th Anniversary International Conference on Transparent Optical Networks, Athens, Greece.","DOI":"10.1109\/ICTON.2008.4598706"},{"key":"ref_6","doi-asserted-by":"crossref","first-page":"11147","DOI":"10.1364\/OE.26.011147","article-title":"Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum","volume":"26","author":"Lu","year":"2018","journal-title":"Opt. Express"},{"key":"ref_7","first-page":"10","article-title":"Seeing blue: Pushing integrated photonics into the ultraviolet with ALD aluminum oxide","volume":"Volume 11283","author":"Cheben","year":"2020","journal-title":"Integrated Optics: Devices, Materials, and Technologies XXIV"},{"key":"ref_8","doi-asserted-by":"crossref","first-page":"2209","DOI":"10.1109\/JPROC.2018.2861576","article-title":"Silicon Nitride in Silicon Photonics","volume":"106","author":"Blumenthal","year":"2018","journal-title":"Proc. IEEE"},{"key":"ref_9","doi-asserted-by":"crossref","first-page":"020903","DOI":"10.1063\/1.5131683","article-title":"Photonic integration for UV to IR applications","volume":"5","author":"Blumenthal","year":"2020","journal-title":"APL Photonics"},{"key":"ref_10","doi-asserted-by":"crossref","first-page":"025106","DOI":"10.1088\/1361-6463\/50\/2\/025106","article-title":"Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications","volume":"50","author":"Khokhar","year":"2017","journal-title":"J. Phys. D: Appl. Phys."},{"key":"ref_11","doi-asserted-by":"crossref","first-page":"21884","DOI":"10.1021\/acsami.5b06329","article-title":"Exploring High Refractive Index Silicon-Rich Nitride Films by Low-Temperature Inductively Coupled Plasma Chemical Vapor Deposition and Applications for Integrated Waveguides","volume":"7","author":"Ng","year":"2015","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_12","doi-asserted-by":"crossref","first-page":"B50","DOI":"10.1364\/PRJ.6.000B50","article-title":"Nonlinear optics on silicon-rich nitride\u2013a high nonlinear figure of merit CMOS platform","volume":"6","author":"Tan","year":"2018","journal-title":"Photonics Res."},{"key":"ref_13","doi-asserted-by":"crossref","unstructured":"Fern\u00e1ndez Gavela, A., Grajales Garc\u00eda, D., Ramirez, J.C., and Lechuga, L.M. (2016). Last advances in silicon-based optical biosensors. Sensors, 16.","DOI":"10.3390\/s16030285"},{"key":"ref_14","doi-asserted-by":"crossref","first-page":"081301","DOI":"10.1063\/5.0013577","article-title":"Ultra-sensitive refractive index gas sensor with functionalized silicon nitride photonic circuits","volume":"5","author":"Antonacci","year":"2020","journal-title":"APL Photonics"},{"key":"ref_15","doi-asserted-by":"crossref","first-page":"3163","DOI":"10.1364\/OE.19.003163","article-title":"Ultra-low-loss high-aspect-ratio Si3N4 waveguides","volume":"19","author":"Bauters","year":"2011","journal-title":"Opt. Express"},{"key":"ref_16","doi-asserted-by":"crossref","first-page":"24090","DOI":"10.1364\/OE.19.024090","article-title":"Planar waveguides with less than 0.1dB\/m propagation loss fabricated with wafer bonding","volume":"19","author":"Bauters","year":"2011","journal-title":"Opt. Express"},{"key":"ref_17","doi-asserted-by":"crossref","first-page":"544","DOI":"10.1364\/OE.21.000544","article-title":"Silicon on ultra-low-loss waveguide photonic integration platform","volume":"21","author":"Bauters","year":"2013","journal-title":"Opt. Express"},{"key":"ref_18","doi-asserted-by":"crossref","first-page":"21859","DOI":"10.1364\/OE.22.021859","article-title":"CMOS compatible monolithic multi-layer Si3N4-on-SOI platform for low-loss high performance silicon photonics dense integration","volume":"22","author":"Huang","year":"2014","journal-title":"Opt. Express"},{"key":"ref_19","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1007\/s00339-013-7954-2","article-title":"High efficiency silicon nitride grating coupler","volume":"115","author":"Zhang","year":"2014","journal-title":"Appl. Phys. A: Mater. Sci. Process."},{"key":"ref_20","doi-asserted-by":"crossref","first-page":"901","DOI":"10.1109\/JLT.2015.2392784","article-title":"Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices","volume":"33","author":"Sacher","year":"2015","journal-title":"J. Light. Technol."},{"key":"ref_21","doi-asserted-by":"crossref","first-page":"2236","DOI":"10.1038\/s41467-021-21973-z","article-title":"High-yield wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits","volume":"12","author":"Liu","year":"2020","journal-title":"Nat. Commun."},{"key":"ref_22","doi-asserted-by":"crossref","first-page":"071101","DOI":"10.1063\/5.0057881","article-title":"Methods to achieve ultra-high quality factor silicon nitride resonators","volume":"6","author":"Ji","year":"2021","journal-title":"APL Photonics"},{"key":"ref_23","doi-asserted-by":"crossref","first-page":"2003","DOI":"10.1116\/1.581302","article-title":"Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia","volume":"16","author":"Rossi","year":"1998","journal-title":"J. Vac. Sci. Technol. A: Vac. Surfaces Film."},{"key":"ref_24","doi-asserted-by":"crossref","first-page":"22829","DOI":"10.1364\/OE.21.022829","article-title":"Overcoming Si3N4 film stress limitations for high quality factor ring resonators","volume":"21","author":"Luke","year":"2013","journal-title":"Opt. Express"},{"key":"ref_25","doi-asserted-by":"crossref","first-page":"619","DOI":"10.1364\/OPTICA.4.000619","article-title":"Ultra-low-loss on-chip resonators with sub-milliwatt parametric oscillation threshold","volume":"4","author":"Ji","year":"2017","journal-title":"Optica"},{"key":"ref_26","doi-asserted-by":"crossref","first-page":"642","DOI":"10.1364\/OE.23.000642","article-title":"High confinement, high yield Si3N4 waveguides for nonlinear optical applications","volume":"23","author":"Epping","year":"2015","journal-title":"Opt. Express"},{"key":"ref_27","doi-asserted-by":"crossref","first-page":"20","DOI":"10.1364\/OPTICA.3.000020","article-title":"Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics","volume":"3","author":"Pfeiffer","year":"2016","journal-title":"Optica"},{"key":"ref_28","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JSTQE.2018.2808258","article-title":"Photonic damascene process for low-loss, high-confinement silicon nitride waveguides","volume":"24","author":"Pfeiffer","year":"2018","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_29","doi-asserted-by":"crossref","first-page":"884","DOI":"10.1364\/OPTICA.5.000884","article-title":"Ultra-smooth silicon nitride waveguides based on the Damascene reflow process: Fabrication and loss origins","volume":"5","author":"Pfeiffer","year":"2018","journal-title":"Optica"},{"key":"ref_30","doi-asserted-by":"crossref","first-page":"1347","DOI":"10.1364\/OPTICA.5.001347","article-title":"Ultralow-power chip-based soliton microcombs for photonic integration","volume":"5","author":"Liu","year":"2018","journal-title":"Optica"},{"key":"ref_31","doi-asserted-by":"crossref","first-page":"35719","DOI":"10.1364\/OE.27.035719","article-title":"High-Q Si3N4 microresonators based on a subtractive processing for Kerr nonlinear optics","volume":"27","author":"Ye","year":"2019","journal-title":"Opt. Express"},{"key":"ref_32","doi-asserted-by":"crossref","first-page":"3326","DOI":"10.1364\/OL.44.003326","article-title":"Low-loss high-Q silicon-rich silicon nitride microresonators for Kerr nonlinear optics","volume":"44","author":"Ye","year":"2019","journal-title":"Opt. Lett."},{"key":"ref_33","doi-asserted-by":"crossref","first-page":"30726","DOI":"10.1364\/OE.27.030726","article-title":"Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators","volume":"27","author":"Youssef","year":"2019","journal-title":"Opt. Express"},{"key":"ref_34","doi-asserted-by":"crossref","first-page":"355","DOI":"10.1109\/LPT.2018.2790045","article-title":"Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the C-Band","volume":"30","author":"Casale","year":"2018","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_35","doi-asserted-by":"crossref","first-page":"081102","DOI":"10.1063\/1.5038795","article-title":"Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics","volume":"113","author":"Kamel","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_36","first-page":"1905544","article-title":"Nonlinear optics in ultra-silicon-rich nitride devices: Recent developments and future outlook","volume":"6","author":"Tan","year":"2021","journal-title":"Adv. Phys. X"},{"key":"ref_37","doi-asserted-by":"crossref","unstructured":"Wilmart, Q., El Dirani, H., Tyler, N., Fowler, D., Malhouitre, S., Garcia, S., Casale, M., Kerdiles, S., Hassan, K., and Monat, C. (2019). A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications. Appl. Sci., 9.","DOI":"10.3390\/app9020255"},{"key":"ref_38","doi-asserted-by":"crossref","first-page":"352","DOI":"10.1364\/PRJ.379555","article-title":"Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform","volume":"8","author":"Lafforgue","year":"2020","journal-title":"Photon. Res."},{"key":"ref_39","doi-asserted-by":"crossref","first-page":"22","DOI":"10.1038\/s41598-017-00062-6","article-title":"Si-rich Silicon Nitride for Nonlinear Signal Processing Applications","volume":"7","author":"Lacava","year":"2017","journal-title":"Sci. Rep."},{"key":"ref_40","doi-asserted-by":"crossref","first-page":"615","DOI":"10.1364\/PRJ.7.000615","article-title":"Intermodal frequency generation in silicon-rich silicon nitride waveguides","volume":"7","author":"Lacava","year":"2019","journal-title":"Photon. Res."},{"key":"ref_41","first-page":"1","article-title":"Silicon nitride photonics for the near-infrared","volume":"26","author":"Lacava","year":"2019","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_42","doi-asserted-by":"crossref","first-page":"15370","DOI":"10.1364\/OE.25.015370","article-title":"Optical bandgap engineering in nonlinear silicon nitride waveguides","volume":"25","author":"Ye","year":"2017","journal-title":"Opt. Express"},{"key":"ref_43","doi-asserted-by":"crossref","first-page":"13878","DOI":"10.1038\/ncomms13878","article-title":"Pushing the limits of CMOS optical parametric amplifiers with USRN: Si7N3 above the two-photon absorption edge","volume":"8","author":"Ooi","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_44","doi-asserted-by":"crossref","first-page":"181101","DOI":"10.1063\/1.5010841","article-title":"Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices","volume":"112","author":"Choi","year":"2018","journal-title":"Appl. Phys. Lett."},{"key":"ref_45","first-page":"1","article-title":"Ultrahigh index and low-loss silicon rich nitride thin film for NIR HAMR optics","volume":"53","author":"Lim","year":"2017","journal-title":"IEEE Trans. Magn."},{"key":"ref_46","doi-asserted-by":"crossref","first-page":"27120","DOI":"10.1038\/srep27120","article-title":"Wideband nonlinear spectral broadening in ultra-short ultra-silicon rich nitride waveguides","volume":"6","author":"Choi","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_47","doi-asserted-by":"crossref","first-page":"013102","DOI":"10.1063\/5.0006151","article-title":"Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride","volume":"128","author":"Cong","year":"2020","journal-title":"J. Appl. Phys."},{"key":"ref_48","doi-asserted-by":"crossref","first-page":"110804","DOI":"10.1063\/1.5113758","article-title":"Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides","volume":"4","author":"Choi","year":"2019","journal-title":"APL Photonics"},{"key":"ref_49","doi-asserted-by":"crossref","unstructured":"Agrawal, G.P. (2000). Nonlinear fiber optics. Nonlinear Science at the Dawn of the 21st Century, Springer.","DOI":"10.1007\/3-540-46629-0_9"},{"key":"ref_50","doi-asserted-by":"crossref","first-page":"17","DOI":"10.1063\/1.1754022","article-title":"Optical second harmonic generation in piezoelectric crystals","volume":"5","author":"Miller","year":"1964","journal-title":"Appl. Phys. Lett."},{"key":"ref_51","doi-asserted-by":"crossref","first-page":"141103","DOI":"10.1063\/1.4823579","article-title":"Nonlinear characterization of hydrogenated amorphous silicon waveguides and analysis of carrier dynamics","volume":"103","author":"Lacava","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_52","doi-asserted-by":"crossref","unstructured":"Guasoni, M., Parmigiani, F., Horak, P., and Richardson, D.J. (2017, January 17\u201321). Novel fiber design for wideband conversion and amplification in multimode fibers. Proceedings of the 2017 European Conference on Optical Communication (ECOC), Gothenburg, Sweden.","DOI":"10.1109\/ECOC.2017.8345887"},{"key":"ref_53","doi-asserted-by":"crossref","first-page":"17145","DOI":"10.1364\/OE.26.017145","article-title":"Shape-preserving and unidirectional frequency conversion by four-wave mixing","volume":"26","author":"Christensen","year":"2018","journal-title":"Opt. Express"},{"key":"ref_54","doi-asserted-by":"crossref","first-page":"1668","DOI":"10.1364\/OL.42.001668","article-title":"Uni-directional wavelength conversion in silicon using four-wave mixing driven by cross-polarized pumps","volume":"42","author":"Bell","year":"2017","journal-title":"Opt. Lett."},{"key":"ref_55","doi-asserted-by":"crossref","first-page":"10364","DOI":"10.1038\/s41598-019-46865-7","article-title":"Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements","volume":"9","author":"Sohn","year":"2019","journal-title":"Sci. Rep."},{"key":"ref_56","doi-asserted-by":"crossref","first-page":"12987","DOI":"10.1364\/OE.16.012987","article-title":"Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride\/silicon dioxide waveguides","volume":"16","author":"Ikeda","year":"2008","journal-title":"Opt. Express"},{"key":"ref_57","doi-asserted-by":"crossref","first-page":"061101","DOI":"10.1063\/1.3299008","article-title":"Group velocity dispersion and self phase modulation in silicon nitride waveguides","volume":"96","author":"Tan","year":"2010","journal-title":"Appl. Phys. Lett."},{"key":"ref_58","doi-asserted-by":"crossref","first-page":"066108","DOI":"10.1063\/5.0003633","article-title":"Optical parametric gain in CMOS-compatible sub-100 \u03bcm photonic crystal waveguides","volume":"5","author":"Sahin","year":"2020","journal-title":"APL Photonics"},{"key":"ref_59","doi-asserted-by":"crossref","first-page":"1900114","DOI":"10.1002\/lpor.201900114","article-title":"Bragg soliton compression and fission on CMOS-compatible ultra-silicon-rich nitride","volume":"13","author":"Sahin","year":"2019","journal-title":"Laser Photonics Rev."},{"key":"ref_60","doi-asserted-by":"crossref","first-page":"596","DOI":"10.1364\/PRJ.411073","article-title":"Thermo-optically tunable spectral broadening in a nonlinear ultra-silicon-rich nitride Bragg grating","volume":"9","author":"Cao","year":"2021","journal-title":"Photonics Res."},{"key":"ref_61","doi-asserted-by":"crossref","first-page":"498","DOI":"10.1002\/lpor.201500054","article-title":"Supercontinuum generation in bandgap engineered, back-end CMOS compatible silicon rich nitride waveguides","volume":"9","author":"Wang","year":"2015","journal-title":"Laser Photonics Rev."},{"key":"ref_62","first-page":"116820L","article-title":"Improved CMOS-compatible ultra-silicon-rich nitride for non-linear optics","volume":"Volume 11682","author":"Ng","year":"2021","journal-title":"Optical Components and Materials XVIII"},{"key":"ref_63","doi-asserted-by":"crossref","first-page":"5267","DOI":"10.1038\/s41598-022-09227-4","article-title":"Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)","volume":"12","author":"Ng","year":"2022","journal-title":"Sci. Rep."},{"key":"ref_64","doi-asserted-by":"crossref","first-page":"1678","DOI":"10.1109\/JSTQE.2006.883151","article-title":"The Past, Present, and Future of Silicon Photonics","volume":"12","author":"Soref","year":"2006","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_65","doi-asserted-by":"crossref","first-page":"394","DOI":"10.1063\/1.1654427","article-title":"Switching and modulation of light in magneto-optic waveguides of garnet films","volume":"21","author":"Tien","year":"1972","journal-title":"Appl. Phys. Lett."},{"key":"ref_66","doi-asserted-by":"crossref","first-page":"10457","DOI":"10.1364\/OE.17.010457","article-title":"Compact and low power thermo-optic switch using folded silicon waveguides","volume":"17","author":"Densmore","year":"2009","journal-title":"Opt. Express"},{"key":"ref_67","doi-asserted-by":"crossref","first-page":"43","DOI":"10.1038\/s41566-020-00711-9","article-title":"Electrically driven acousto-optics and broadband non-reciprocity in silicon photonics","volume":"15","author":"Kittlaus","year":"2021","journal-title":"Nat. Photonics"},{"key":"ref_68","doi-asserted-by":"crossref","first-page":"325","DOI":"10.1038\/nature03569","article-title":"Micrometre-scale silicon electro-optic modulator","volume":"435","author":"Xu","year":"2005","journal-title":"Nature"},{"key":"ref_69","doi-asserted-by":"crossref","first-page":"615","DOI":"10.1038\/nature02310","article-title":"A high-speed silicon optical modulator based on a metal\u2013oxide\u2013semiconductor capacitor","volume":"427","author":"Liu","year":"2004","journal-title":"Nature"},{"key":"ref_70","doi-asserted-by":"crossref","first-page":"11507","DOI":"10.1364\/OE.19.011507","article-title":"High contrast 40Gbit\/s optical modulation in silicon","volume":"19","author":"Thomson","year":"2011","journal-title":"Opt. Express"},{"key":"ref_71","doi-asserted-by":"crossref","first-page":"77","DOI":"10.3389\/fphy.2014.00077","article-title":"High-speed carrier-depletion silicon Mach\u2013Zehnder optical modulators with lateral PN junctions","volume":"2","author":"Reed","year":"2014","journal-title":"Front. Phys."},{"key":"ref_72","doi-asserted-by":"crossref","first-page":"8845","DOI":"10.1364\/OPEX.13.008845","article-title":"A sub-micron depletion-type photonic modulator in silicon on insulator","volume":"13","author":"Gardes","year":"2005","journal-title":"Opt. Express"},{"key":"ref_73","doi-asserted-by":"crossref","first-page":"2494","DOI":"10.1364\/JOSAB.32.002494","article-title":"On the origin of the second-order nonlinearity in strained Si\u2013SiN structures","volume":"32","author":"Khurgin","year":"2015","journal-title":"JOSA B"},{"key":"ref_74","doi-asserted-by":"crossref","first-page":"e173","DOI":"10.1038\/lsa.2014.54","article-title":"100 GHz silicon\u2013organic hybrid modulator","volume":"3","author":"Alloatti","year":"2014","journal-title":"Light. Sci. Appl."},{"key":"ref_75","doi-asserted-by":"crossref","unstructured":"Zhang, X., Hosseini, A., yun Lin, C., Luo, J., Jen, A.K.Y., and Chen, R.T. (2013). Demonstration of Effective In-Device r33 over 1000 pm\/V in Electro-Optic Polymer Refilled Silicon Slot Photonic Crystal Waveguide Modulator, Optica Publishing Group CLEO.","DOI":"10.1364\/CLEO_SI.2013.CTu2F.6"},{"key":"ref_76","doi-asserted-by":"crossref","first-page":"112","DOI":"10.1364\/OPTICA.1.000112","article-title":"Hybrid silicon and lithium niobate electro-optical ring modulator","volume":"1","author":"Chen","year":"2014","journal-title":"Optica"},{"key":"ref_77","doi-asserted-by":"crossref","first-page":"359","DOI":"10.1038\/s41566-019-0378-6","article-title":"High-performance hybrid silicon and lithium niobate Mach\u2013Zehnder modulators for 100 Gbit s-1 and beyond","volume":"13","author":"He","year":"2019","journal-title":"Nat. Photonics"},{"key":"ref_78","doi-asserted-by":"crossref","unstructured":"Eltes, F., Ortmann, J.E., Castera, P., Urbonas, D., Caimi, D., Czornomaz, L., Sanchis, P., Fompeyrine, J., and Abel, S. (2019, January 23\u201327). Silicon-Integrated High-Speed Modulators Based on Barium Titanate with Record-Large Pockels Coefficients. Proceedings of the 2019 Conference on Lasers and Electro-Optics Europe European Quantum Electronics Conference (CLEO\/Europe-EQEC), Munich, Germany.","DOI":"10.1109\/CLEOE-EQEC.2019.8872385"},{"key":"ref_79","doi-asserted-by":"crossref","first-page":"9","DOI":"10.1038\/s41563-018-0259-2","article-title":"Strong pockels materials","volume":"18","author":"Li","year":"2019","journal-title":"Nat. Mater."},{"key":"ref_80","doi-asserted-by":"crossref","first-page":"3444","DOI":"10.1038\/s41467-018-05846-6","article-title":"Nanophotonic Pockels modulators on a silicon nitride platform","volume":"9","author":"Alexander","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_81","doi-asserted-by":"crossref","first-page":"3338","DOI":"10.1109\/JLT.2020.2979192","article-title":"High-Speed Plasmonic-Silicon Modulator Driven by Epsilon-near-zero Conductive Oxide","volume":"8724","author":"Zhou","year":"2020","journal-title":"J. Light. Technol."},{"key":"ref_82","doi-asserted-by":"crossref","unstructured":"Baudzus, L., and Krummrich, P.M. (2016). Low Loss Electro-Optic Polymer Based Fast Adaptive Phase Shifters Realized in Silicon Nitride and Oxynitride Waveguide Technology. Photonics, 3.","DOI":"10.3390\/photonics3030049"},{"key":"ref_83","doi-asserted-by":"crossref","first-page":"618","DOI":"10.1364\/OL.44.000618","article-title":"Tunable Hybrid Silicon Nitride and Thin-Film Lithium Niobate Electro-Optic microresonator","volume":"44","author":"Ahmed","year":"2019","journal-title":"Opt. Lett."},{"key":"ref_84","doi-asserted-by":"crossref","first-page":"2677","DOI":"10.1021\/acsphotonics.9b00558","article-title":"Ultra-Low-Power Tuning in Hybrid Barium Titanate\u2013Silicon Nitride Electro-optic Devices on Silicon","volume":"6","author":"Ortmann","year":"2019","journal-title":"ACS Photonics"},{"key":"ref_85","doi-asserted-by":"crossref","first-page":"35129","DOI":"10.1364\/OE.27.035129","article-title":"Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applications","volume":"27","author":"Faneca","year":"2019","journal-title":"Opt. Express"},{"key":"ref_86","doi-asserted-by":"crossref","first-page":"2709","DOI":"10.1021\/acs.nanolett.0c04149","article-title":"Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials","volume":"21","author":"He","year":"2021","journal-title":"Nano Lett."},{"key":"ref_87","first-page":"335","article-title":"Low temperature silicon nitride waveguides for multilayer platforms","volume":"Volume 9891","author":"Vivien","year":"2016","journal-title":"Silicon Photonics and Photonic Integrated Circuits V"},{"key":"ref_88","doi-asserted-by":"crossref","first-page":"19020","DOI":"10.1364\/OE.24.019020","article-title":"Efficiently poled electro-optic polymer modulators","volume":"24","author":"Qiu","year":"2016","journal-title":"Opt. Express"},{"key":"ref_89","doi-asserted-by":"crossref","first-page":"77","DOI":"10.1016\/j.optcom.2015.08.048","article-title":"Analysis of efficiently poled electro-optic polymer\/TiO2 vertical slot waveguide modulators","volume":"362","author":"Enami","year":"2016","journal-title":"Opt. Commun."},{"key":"ref_90","doi-asserted-by":"crossref","first-page":"191103","DOI":"10.1063\/1.2737139","article-title":"Conductivity-dependency-free in-plane poling for Mach\u2013Zehnder modulator with highly conductive electro-optic polymer","volume":"90","author":"Song","year":"2007","journal-title":"Appl. Phys. Lett."},{"key":"ref_91","doi-asserted-by":"crossref","first-page":"4067","DOI":"10.1109\/JLT.2013.2284547","article-title":"A Silicon-Polymer Hybrid Modulator\u2014Design, Simulation and Proof of Principle","volume":"31","author":"Himmelhuber","year":"2013","journal-title":"J. Light. Technol."},{"key":"ref_92","doi-asserted-by":"crossref","first-page":"8561","DOI":"10.1038\/srep08561","article-title":"A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator","volume":"5","author":"Qiu","year":"2015","journal-title":"Sci. Rep."},{"key":"ref_93","doi-asserted-by":"crossref","first-page":"16902","DOI":"10.1364\/OE.18.016902","article-title":"Design of transmission line driven slot waveguide Mach\u2013Zehnder interferometers and application to analog optical links","volume":"18","author":"Witzens","year":"2010","journal-title":"Opt. Express"},{"key":"ref_94","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2021.3059276","article-title":"Designs of Silicon Nitride Slot Waveguide Modulators with Electro-Optic Polymer and the Effect of Induced Charges in Si-Substrate on Their Performance","volume":"13","author":"Rutirawut","year":"2021","journal-title":"IEEE Photonics J."},{"key":"ref_95","doi-asserted-by":"crossref","unstructured":"Ishino, M., and Yokoyama, S. (2015, January 25\u201328). Hybrid thin silicon nitride and electro-optic polymer waveguide modulators. Proceedings of the 2015 20th Microoptics Conference (MOC), Fukuoka, Japan.","DOI":"10.1109\/MOC.2015.7416476"},{"key":"ref_96","doi-asserted-by":"crossref","first-page":"18326","DOI":"10.1364\/OE.16.018326","article-title":"Electro-optic polymer cladding ring resonator modulators","volume":"16","author":"Block","year":"2008","journal-title":"Opt. Express"},{"key":"ref_97","doi-asserted-by":"crossref","first-page":"2513","DOI":"10.1038\/s41467-018-04956-5","article-title":"Long-haul optical transmission link using low-noise phase-sensitive amplifiers","volume":"9","author":"Olsson","year":"2018","journal-title":"Nat. Commun."},{"key":"ref_98","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1007\/BF00614817","article-title":"Lithium niobate: Summary of physical properties and crystal structure","volume":"37","author":"Weis","year":"1985","journal-title":"Appl. Phys. A"},{"key":"ref_99","doi-asserted-by":"crossref","first-page":"036101","DOI":"10.1063\/1.1988987","article-title":"Temperature dependence of the thermo-optic coefficient of lithium niobate, from 300 to 515 K in the visible and infrared regions","volume":"98","author":"Moretti","year":"2005","journal-title":"J. Appl. Phys."},{"key":"ref_100","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1364\/OL.27.000179","article-title":"Highly efficient second-harmonic generation in buried waveguides formed by annealed and reverse proton exchange in periodically poled lithium niobate","volume":"27","author":"Parameswaran","year":"2002","journal-title":"Opt. Lett."},{"key":"ref_101","doi-asserted-by":"crossref","first-page":"69","DOI":"10.1109\/2944.826874","article-title":"A review of lithium niobate modulators for fiber-optic communications systems","volume":"6","author":"Wooten","year":"2000","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_102","doi-asserted-by":"crossref","first-page":"2293","DOI":"10.1063\/1.121801","article-title":"Fabrication of single-crystal lithium niobate films by crystal ion slicing","volume":"73","author":"Levy","year":"1998","journal-title":"Appl. Phys. Lett."},{"key":"ref_103","doi-asserted-by":"crossref","first-page":"242","DOI":"10.1364\/AOP.411024","article-title":"Integrated photonics on thin-film lithium niobate","volume":"13","author":"Zhu","year":"2021","journal-title":"Adv. Opt. Photonics"},{"key":"ref_104","doi-asserted-by":"crossref","first-page":"101","DOI":"10.1038\/s41586-018-0551-y","article-title":"Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages","volume":"562","author":"Wang","year":"2018","journal-title":"Nature"},{"key":"ref_105","doi-asserted-by":"crossref","first-page":"30741","DOI":"10.1364\/OE.27.030741","article-title":"High-performance racetrack resonator in silicon nitride-thin film lithium niobate hybrid platform","volume":"27","author":"Ahmed","year":"2019","journal-title":"Opt. Express"},{"key":"ref_106","doi-asserted-by":"crossref","first-page":"116102","DOI":"10.1063\/5.0065437","article-title":"High-performance and compact integrated photonics platform based on silicon rich nitride\u2013lithium niobate on insulator","volume":"6","author":"Huang","year":"2021","journal-title":"APL Photonics"},{"key":"ref_107","doi-asserted-by":"crossref","first-page":"736","DOI":"10.1109\/LPT.2015.2507136","article-title":"LiNbO3 Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides","volume":"28","author":"Jin","year":"2015","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_108","doi-asserted-by":"crossref","first-page":"803","DOI":"10.1364\/OL.42.000803","article-title":"Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon","volume":"42","author":"Chang","year":"2017","journal-title":"Opt. Lett."},{"key":"ref_109","doi-asserted-by":"crossref","first-page":"220501","DOI":"10.1063\/5.0050117","article-title":"Perspective on the future of silicon photonics and electronics","volume":"118","author":"Margalit","year":"2021","journal-title":"Appl. Phys. Lett."},{"key":"ref_110","doi-asserted-by":"crossref","first-page":"110803","DOI":"10.1063\/1.5120004","article-title":"III-V-on-Si photonic integrated circuits realized using micro-transfer-printing","volume":"4","author":"Zhang","year":"2019","journal-title":"APL Photonics"},{"key":"ref_111","doi-asserted-by":"crossref","unstructured":"Vanackere, T., Billet, M., de Beeck, C.O., Poelman, S., Roelkens, G., Clemmen, S., and Kuyken, B. (2020, January 6\u201310). Micro-Transfer Printing of Lithium Niobate on Silicon Nitride. Proceedings of the 2020 European Conference on Optical Communications (ECOC), Brussels, Belgium.","DOI":"10.1109\/ECOC48923.2020.9333415"},{"key":"ref_112","doi-asserted-by":"crossref","unstructured":"Ilie, S.T., Ginel-Moreno, P., Sagar, J., Dom\u00ednguez Bucio, T., Ortega-Monux, A., Lekkas, K., Rutirawut, T., Mastronardi, L., Skandalos, I., and Grabska, K.M. (2021, January 25\u201327). Silicon nitride CMOS platform for integrated optical phased arrays applications. Proceedings of the 2021 IEEE 17th International Conference on Group IV Photonics (GFP), Malaga, Spain.","DOI":"10.1109\/GFP51802.2021.9673980"},{"key":"ref_113","doi-asserted-by":"crossref","first-page":"1700256","DOI":"10.1002\/lpor.201700256","article-title":"Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits","volume":"12","author":"Boes","year":"2018","journal-title":"Laser Photonics Rev."},{"key":"ref_114","doi-asserted-by":"crossref","first-page":"102","DOI":"10.1038\/s41566-020-00754-y","article-title":"Photonics for artificial intelligence and neuromorphic computing","volume":"15","author":"Shastri","year":"2021","journal-title":"Nat. Photonics"},{"key":"ref_115","doi-asserted-by":"crossref","first-page":"845","DOI":"10.1038\/42190","article-title":"Design and synthesis of chromophores and polymers for electro-optic and photorefractive applications","volume":"388","author":"Marder","year":"1997","journal-title":"Nature"},{"key":"ref_116","doi-asserted-by":"crossref","first-page":"1671","DOI":"10.1038\/ncomms2695","article-title":"A strong electro-optically active lead-free ferroelectric integrated on silicon","volume":"4","author":"Abel","year":"2013","journal-title":"Nat. Commun."},{"key":"ref_117","doi-asserted-by":"crossref","first-page":"1185","DOI":"10.1364\/OL.41.001185","article-title":"Effect of dielectric claddings on the electro-optic behavior of silicon waveguides","volume":"41","author":"Sharma","year":"2016","journal-title":"Opt. Lett."},{"key":"ref_118","doi-asserted-by":"crossref","first-page":"4221","DOI":"10.1515\/nanoph-2020-0297","article-title":"Opportunities for integrated photonic neural networks","volume":"9","author":"Stark","year":"2020","journal-title":"Nanophotonics"},{"key":"ref_119","first-page":"811","article-title":"Neuromorphic photonics with coherent linear neurons using dual-IQ modulation cells","volume":"38","author":"Tsakyridis","year":"2019","journal-title":"J. Light. Technol."},{"key":"ref_120","first-page":"1","article-title":"All-Optical WDM Recurrent Neural Networks with Gating","volume":"26","author":"Dabos","year":"2020","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_121","doi-asserted-by":"crossref","first-page":"1340","DOI":"10.1109\/JLT.2020.3038890","article-title":"A Photonic Recurrent Neuron for Time-Series Classification","volume":"39","author":"Passalis","year":"2021","journal-title":"J. Light. Technol."},{"key":"ref_122","first-page":"1","article-title":"Femtojoule per MAC Neuromorphic Photonics: An Energy and Technology Roadmap","volume":"26","author":"Dabos","year":"2020","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_123","doi-asserted-by":"crossref","first-page":"063002","DOI":"10.1088\/2040-8978\/18\/6\/063002","article-title":"Roadmap of optical communications","volume":"18","author":"Agrell","year":"2016","journal-title":"J. Opt."},{"key":"ref_124","doi-asserted-by":"crossref","first-page":"1606128","DOI":"10.1002\/adma.201606128","article-title":"2D Materials for Optical Modulation: Challenges and Opportunities","volume":"29","author":"Yu","year":"2017","journal-title":"Adv. Mater."},{"key":"ref_125","doi-asserted-by":"crossref","first-page":"2453","DOI":"10.1038\/s41467-020-16266-w","article-title":"Universal mechanical exfoliation of large-area 2D crystals","volume":"11","author":"Huang","year":"2020","journal-title":"Nat. Commun."},{"key":"ref_126","doi-asserted-by":"crossref","first-page":"1994","DOI":"10.1007\/s11434-015-0936-3","article-title":"2D materials via liquid exfoliation: A review on fabrication and applications","volume":"60","author":"Huo","year":"2015","journal-title":"Sci. Bull."},{"key":"ref_127","doi-asserted-by":"crossref","first-page":"6091","DOI":"10.1021\/acs.chemrev.7b00536","article-title":"Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures","volume":"118","author":"Cai","year":"2018","journal-title":"Chem. Rev."},{"key":"ref_128","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric Field Effect in Atomically Thin Carbon Films","volume":"306","author":"Novoselov","year":"2004","journal-title":"Science"},{"key":"ref_129","doi-asserted-by":"crossref","first-page":"206","DOI":"10.1126\/science.1152793","article-title":"Gate-Variable Optical Transitions in Graphene","volume":"320","author":"Wang","year":"2008","journal-title":"Science"},{"key":"ref_130","doi-asserted-by":"crossref","first-page":"64","DOI":"10.1038\/nature10067","article-title":"A graphene-based broadband optical modulator","volume":"474","author":"Liu","year":"2011","journal-title":"Nature"},{"key":"ref_131","doi-asserted-by":"crossref","first-page":"31678","DOI":"10.1364\/OE.21.031678","article-title":"High-quality Si3N4 circuits as a platform for graphene-based nanophotonic devices","volume":"21","author":"Gruhler","year":"2013","journal-title":"Opt. Express"},{"key":"ref_132","doi-asserted-by":"crossref","first-page":"511","DOI":"10.1038\/nphoton.2015.122","article-title":"Graphene electro-optic modulator with 30 GHz bandwidth","volume":"9","author":"Phare","year":"2015","journal-title":"Nat. Photonics"},{"key":"ref_133","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1109\/JSTQE.2016.2586458","article-title":"Graphene Modulators and Switches Integrated on Silicon and Silicon Nitride Waveguide","volume":"23","author":"Shiramin","year":"2016","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_134","doi-asserted-by":"crossref","first-page":"21619","DOI":"10.1364\/OE.25.021619","article-title":"Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide","volume":"25","author":"Fan","year":"2017","journal-title":"Opt. Express"},{"key":"ref_135","doi-asserted-by":"crossref","unstructured":"Chen, W., Xu, Y., Gao, Y., Ji, L., Wang, X., Sun, X., and Zhang, D. (2021). A Broadband Polarization-Insensitive Graphene Modulator Based on Dual Built-in Orthogonal Slots Plasmonic Waveguide. Appl. Sci., 11.","DOI":"10.3390\/app11041897"},{"key":"ref_136","doi-asserted-by":"crossref","first-page":"99","DOI":"10.1515\/nanoph-2020-0363","article-title":"High-performance integrated graphene electro-optic modulator at cryogenic temperature","volume":"10","author":"Lee","year":"2021","journal-title":"Nanophotonics"},{"key":"ref_137","unstructured":"Lee, B.S., Freitas, A.P., Gil-Molina, A., Shim, E., Zhu, Y., Hone, J., and Lipson, M. (2020). Scalable graphene platform for Tbits\/s data transmission. arXiv."},{"key":"ref_138","unstructured":"Datta, I., Lee, B., and Lipson, M. Low Power Optical Phase Array Using Graphene on Silicon Photonics; Technical Report; Columbia University, New York, NY, USA, 2018."},{"key":"ref_139","doi-asserted-by":"crossref","first-page":"2664","DOI":"10.1039\/C4CS00287C","article-title":"Physical and chemical tuning of two-dimensional transition metal dichalcogenides","volume":"44","author":"Wang","year":"2015","journal-title":"Chem. Soc. Rev."},{"key":"ref_140","doi-asserted-by":"crossref","first-page":"1610","DOI":"10.1021\/acs.nanolett.6b04775","article-title":"Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides","volume":"17","author":"Kang","year":"2017","journal-title":"Nano Lett."},{"key":"ref_141","doi-asserted-by":"crossref","first-page":"091112","DOI":"10.1063\/1.4929779","article-title":"Silicon-nitride photonic circuits interfaced with monolayer MoS2","volume":"107","author":"Wei","year":"2015","journal-title":"Appl. Phys. Lett."},{"key":"ref_142","doi-asserted-by":"crossref","first-page":"342","DOI":"10.1021\/acsphotonics.7b01206","article-title":"CMOS-compatible WS2-based all-optical modulator","volume":"5","author":"Yang","year":"2018","journal-title":"Acs Photonics"},{"key":"ref_143","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1038\/s41566-020-0590-4","article-title":"Low-loss composite photonic platform based on 2D semiconductor monolayers","volume":"14","author":"Datta","year":"2020","journal-title":"Nat. Photonics"},{"key":"ref_144","doi-asserted-by":"crossref","first-page":"949","DOI":"10.1364\/OL.447492","article-title":"MoS2 hybrid integrated micro-ring resonator phase shifter based on a silicon nitride platform","volume":"47","author":"Zhao","year":"2022","journal-title":"Opt. Lett."},{"key":"ref_145","doi-asserted-by":"crossref","unstructured":"Pshenichnyuk, I.A., Kosolobov, S.S., and Drachev, V.P. (2019). Towards Deep Integration of Electronics and Photonics. Appl. Sci., 9.","DOI":"10.3390\/app9224834"},{"key":"ref_146","doi-asserted-by":"crossref","first-page":"5751","DOI":"10.1016\/j.surfcoat.2005.08.144","article-title":"Thin films engineering of indium tin oxide: Large area flat panel displays application","volume":"200","author":"Betz","year":"2006","journal-title":"Surf. Coatings Technol."},{"key":"ref_147","unstructured":"Maw, W.W. (1992). Capacitive Touch Screen."},{"key":"ref_148","doi-asserted-by":"crossref","first-page":"16621","DOI":"10.1039\/D1TA01291F","article-title":"Tin oxide for optoelectronic, photovoltaic and energy storage devices: A review","volume":"9","author":"Dalapati","year":"2021","journal-title":"J. Mater. Chem. A"},{"key":"ref_149","doi-asserted-by":"crossref","first-page":"012170","DOI":"10.1088\/1757-899X\/423\/1\/012170","article-title":"Review of ZnO Transparent Conducting Oxides for solar applications","volume":"423","author":"Chen","year":"2018","journal-title":"IOP Conf. Ser. Mater. Sci. Eng."},{"key":"ref_150","doi-asserted-by":"crossref","unstructured":"Fernandez, S., Gonzales, J.P., Grandal, J., Bra\u00f1a, A.F., G\u00f3mez-Mancebo, M.B., and Gand\u00eda, J.J. (2021). Roles of Low Temperature Sputtered Indium Tin Oxide for Solar Photovoltaic Technology. Materials, 14.","DOI":"10.3390\/ma14247758"},{"key":"ref_151","doi-asserted-by":"crossref","first-page":"205322","DOI":"10.1103\/PhysRevB.75.205322","article-title":"Self-consistent analytical solution of a problem of charge-carrier injection at a conductor\/insulator interface","volume":"75","author":"Neumann","year":"2007","journal-title":"Phys. Rev. B\u2014Condens. Matter Mater. Phys."},{"key":"ref_152","first-page":"8855","article-title":"A surface plasmon polariton absorption modulator","volume":"19","author":"Leuthold","year":"2011","journal-title":"Int. Conf. Transparent Opt. Networks"},{"key":"ref_153","doi-asserted-by":"crossref","first-page":"6669","DOI":"10.1038\/s41598-019-42675-z","article-title":"On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform","volume":"9","author":"Swillam","year":"2019","journal-title":"Sci. Rep."},{"key":"ref_154","doi-asserted-by":"crossref","first-page":"412","DOI":"10.1109\/TNANO.2018.2804485","article-title":"Enhanced Performance of ITO-Assisted Electro-Absorption Optical Modulator Using Sidewall Angled Silicon Waveguide","volume":"17","author":"Shah","year":"2018","journal-title":"IEEE Trans. Nanotechnol."},{"key":"ref_155","doi-asserted-by":"crossref","first-page":"735","DOI":"10.1109\/JPHOT.2012.2197742","article-title":"Ultracompact electroabsorption modulators based on tunable epsilon-near-zero-slot waveguides","volume":"4","author":"Lu","year":"2012","journal-title":"IEEE Photonics J."},{"key":"ref_156","doi-asserted-by":"crossref","first-page":"27326","DOI":"10.1364\/OE.21.027326","article-title":"Towards CMOS-compatible nanophotonics: Ultra-compact modulators using alternative plasmonic materials","volume":"21","author":"Babicheva","year":"2013","journal-title":"Opt. Express"},{"key":"ref_157","doi-asserted-by":"crossref","first-page":"4484","DOI":"10.1021\/acsphotonics.8b00945","article-title":"Epsilon-Near-Zero Si Slot-Waveguide Modulator","volume":"5","author":"Liu","year":"2018","journal-title":"ACS Photonics"},{"key":"ref_158","doi-asserted-by":"crossref","first-page":"6463","DOI":"10.1021\/nl502998z","article-title":"Nanoscale conducting oxide PlasMOStor","volume":"14","author":"Lee","year":"2014","journal-title":"Nano Lett."},{"key":"ref_159","doi-asserted-by":"crossref","unstructured":"Yi, F., Shim, E., Zhu, A.Y., Zhu, H., Reed, J.C., and Cubukcu, E. (2013). Voltage tuning of plasmonic absorbers by indium tin oxide. Appl. Phys. Lett., 102.","DOI":"10.1063\/1.4809516"},{"key":"ref_160","doi-asserted-by":"crossref","first-page":"229","DOI":"10.1016\/S1567-1739(02)00092-5","article-title":"The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device","volume":"2","author":"Son","year":"2002","journal-title":"Curr. Appl. Phys."},{"key":"ref_161","doi-asserted-by":"crossref","first-page":"192","DOI":"10.1109\/JSTQE.2014.2375153","article-title":"Broadband electroabsorption modulators design based on epsilon-near-zero indium tin oxide","volume":"21","author":"Zhao","year":"2015","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_162","doi-asserted-by":"crossref","unstructured":"Bhowmik, T., Chowdhary, A.K., Kumar, A., and Sikdar, D. (2021). Guided-Mode Resonance based All-dielectric Optical Intensity Modulator. 2021 IEEE Photonics Conference, IPC 2021\u2014Proceedings, IEEE.","DOI":"10.1109\/IPC48725.2021.9592867"},{"key":"ref_163","doi-asserted-by":"crossref","first-page":"1551","DOI":"10.1364\/OME.8.001551","article-title":"GST-on-silicon hybrid nanophotonic integrated circuits: A non-volatile quasi-continuously reprogrammable platform","volume":"8","author":"Zheng","year":"2018","journal-title":"Opt. Mater. Express"},{"key":"ref_164","doi-asserted-by":"crossref","first-page":"709","DOI":"10.1364\/AOP.387155","article-title":"Principles, fundamentals, and applications of programmable integrated photonics","volume":"12","author":"Gasulla","year":"2020","journal-title":"Adv. Opt. Photonics"},{"key":"ref_165","doi-asserted-by":"crossref","first-page":"208","DOI":"10.1038\/s41586-019-1157-8","article-title":"All-optical spiking neurosynaptic networks with self-learning capabilities","volume":"569","author":"Feldmann","year":"2019","journal-title":"Nature"},{"key":"ref_166","unstructured":"Cil, K. (2015). Temperature Dependent Characterization and Crystallization Dynamics of Ge2Sb2Te5 Thin Films and Nanoscale Structures. [Ph.D. Thesis, University of Connecticut]."},{"key":"ref_167","doi-asserted-by":"crossref","first-page":"12980","DOI":"10.1038\/s41598-018-31365-x","article-title":"Toward Fast Neural Computing Using All-Photonic Phase Change Spiking Neurons","volume":"8","author":"Chakraborty","year":"2018","journal-title":"Sci. Rep."},{"key":"ref_168","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1038\/s41586-020-2764-0","article-title":"Programmable photonic circuits","volume":"586","author":"Bogaerts","year":"2020","journal-title":"Nature"},{"key":"ref_169","doi-asserted-by":"crossref","first-page":"1802435","DOI":"10.1002\/adma.201802435","article-title":"Device-level photonic memories and logic applications using phase-change materials","volume":"30","author":"Cheng","year":"2018","journal-title":"Adv. Mater."},{"key":"ref_170","doi-asserted-by":"crossref","first-page":"15741","DOI":"10.1364\/OE.16.015741","article-title":"Dynamics of microring resonator modulators","volume":"16","author":"Sacher","year":"2008","journal-title":"Opt. Express"},{"key":"ref_171","doi-asserted-by":"crossref","first-page":"1673","DOI":"10.1109\/JSTQE.2009.2026060","article-title":"Integrated quantum photonics","volume":"15","author":"Politi","year":"2009","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_172","doi-asserted-by":"crossref","unstructured":"Silverstone, J.W., Wang, J., Bonneau, D., Sibson, P., Santagati, R., Erven, C., O\u2019Brien, J., and Thompson, M. (August, January 31). Silicon quantum photonics. Proceedings of the 2016 International Conference on Optical MEMS and Nanophotonics (OMN), Singapore.","DOI":"10.1109\/OMN.2016.7565856"},{"key":"ref_173","doi-asserted-by":"crossref","first-page":"6","DOI":"10.1038\/nphoton.2015.254","article-title":"The programmable processor","volume":"10","author":"Capmany","year":"2016","journal-title":"Nat. Photonics"},{"key":"ref_174","doi-asserted-by":"crossref","first-page":"2455","DOI":"10.1364\/OME.8.002455","article-title":"Controlled switching of phase-change materials by evanescent-field coupling in integrated photonics","volume":"8","author":"Rios","year":"2018","journal-title":"Opt. Mater. Express"},{"key":"ref_175","doi-asserted-by":"crossref","first-page":"465","DOI":"10.1038\/nphoton.2017.126","article-title":"Phase-change materials for non-volatile photonic applications","volume":"11","author":"Wuttig","year":"2017","journal-title":"Nat. Photonics"},{"key":"ref_176","doi-asserted-by":"crossref","first-page":"824","DOI":"10.1038\/nmat2009","article-title":"Phase-change materials for rewriteable data storage","volume":"6","author":"Wuttig","year":"2007","journal-title":"Nat. Mater."},{"key":"ref_177","doi-asserted-by":"crossref","first-page":"021101","DOI":"10.1063\/1.5017968","article-title":"Tutorial: Integrated-photonic switching structures","volume":"3","author":"Soref","year":"2018","journal-title":"APL Photonics"},{"key":"ref_178","doi-asserted-by":"crossref","first-page":"703","DOI":"10.1557\/mrs.2014.139","article-title":"Phase change materials and phase change memory","volume":"39","author":"Raoux","year":"2014","journal-title":"MRS Bull."},{"key":"ref_179","doi-asserted-by":"crossref","first-page":"870","DOI":"10.1038\/nmat4649","article-title":"Reversible optical switching of highly confined phonon\u2013polaritons with an ultrathin phase-change material","volume":"15","author":"Li","year":"2016","journal-title":"Nat. Mater."},{"key":"ref_180","unstructured":"Cheng, H., Hsu, T., Raoux, S., Wu, J., Du, P., Breitwisch, M., Zhu, Y., Lai, E., Joseph, E., and Mittal, S. (2011, January 5\u20137). A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material. Proceedings of the 2011 International Electron Devices Meeting, Washington, DC, USA."},{"key":"ref_181","doi-asserted-by":"crossref","first-page":"043108","DOI":"10.1063\/1.3191670","article-title":"Nanosecond switching in GeTe phase change memory cells","volume":"95","author":"Bruns","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_182","doi-asserted-by":"crossref","first-page":"29162","DOI":"10.1038\/srep29162","article-title":"Bipolar switching in chalcogenide phase change memory","volume":"6","author":"Ciocchini","year":"2016","journal-title":"Sci. Rep."},{"key":"ref_183","doi-asserted-by":"crossref","first-page":"553","DOI":"10.1021\/acsphotonics.8b01628","article-title":"Low-loss and broadband nonvolatile phase-change directional coupler switches","volume":"6","author":"Xu","year":"2019","journal-title":"ACS Photonics"},{"key":"ref_184","doi-asserted-by":"crossref","first-page":"eaaw2687","DOI":"10.1126\/sciadv.aaw2687","article-title":"Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality","volume":"5","author":"Farmakidis","year":"2019","journal-title":"Sci. Adv."},{"key":"ref_185","doi-asserted-by":"crossref","first-page":"725","DOI":"10.1038\/nphoton.2015.182","article-title":"Integrated all-photonic non-volatile multi-level memory","volume":"9","author":"Stegmaier","year":"2015","journal-title":"Nat. Photonics"},{"key":"ref_186","doi-asserted-by":"crossref","first-page":"4279","DOI":"10.1038\/s41467-019-12196-4","article-title":"Broadband transparent optical phase change materials for high-performance nonvolatile photonics","volume":"10","author":"Zhang","year":"2019","journal-title":"Nat. Commun."},{"key":"ref_187","doi-asserted-by":"crossref","first-page":"1778","DOI":"10.1364\/OME.397833","article-title":"Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands","volume":"10","author":"Faneca","year":"2020","journal-title":"Opt. Mater. Express"},{"key":"ref_188","doi-asserted-by":"crossref","first-page":"24724","DOI":"10.1364\/OE.27.024724","article-title":"Plasmonically-enhanced all-optical integrated phase-change memory","volume":"27","author":"Gemo","year":"2019","journal-title":"Opt. Express"},{"key":"ref_189","doi-asserted-by":"crossref","first-page":"441","DOI":"10.1038\/nphoton.2017.93","article-title":"Deep learning with coherent nanophotonic circuits","volume":"11","author":"Shen","year":"2017","journal-title":"Nat. Photonics"},{"key":"ref_190","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1364\/OPTICA.6.000001","article-title":"Fast and reliable storage using a 5 bit, nonvolatile photonic memory cell","volume":"6","author":"Li","year":"2019","journal-title":"Optica"},{"key":"ref_191","doi-asserted-by":"crossref","unstructured":"Fantini, A., Perniola, L., Armand, M., Nodin, J., Sousa, V., Persico, A., Cluzel, J., Jahan, C., Maitrejean, S., and Lhostis, S. (2009, January 10\u201314). Comparative assessment of GST and GeTe materials for application to embedded phase-change memory devices. Proceedings of the 2009 IEEE International Memory Workshop, Monterey, CA, USA.","DOI":"10.1109\/IMW.2009.5090585"},{"key":"ref_192","doi-asserted-by":"crossref","first-page":"150","DOI":"10.1021\/acs.nanolett.6b03688","article-title":"Mixed-mode operation of hybrid phase-change nanophotonic circuits","volume":"17","author":"Lu","year":"2017","journal-title":"Nano Lett."},{"key":"ref_193","doi-asserted-by":"crossref","first-page":"4644","DOI":"10.1021\/acsphotonics.8b01127","article-title":"Reconfigurable nanophotonic cavities with nonvolatile response","volume":"5","author":"Feldmann","year":"2018","journal-title":"ACS Photonics"},{"key":"ref_194","doi-asserted-by":"crossref","first-page":"828","DOI":"10.1021\/acsphotonics.6b00032","article-title":"Thermo-optical effect in phase-change nanophotonics","volume":"3","author":"Stegmaier","year":"2016","journal-title":"ACS Photonics"},{"key":"ref_195","doi-asserted-by":"crossref","first-page":"1256","DOI":"10.1038\/s41467-017-01506-3","article-title":"Calculating with light using a chip-scale all-optical abacus","volume":"8","author":"Feldmann","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_196","doi-asserted-by":"crossref","first-page":"52","DOI":"10.1038\/s41586-020-03070-1","article-title":"Parallel convolutional processing using an integrated photonic tensor core","volume":"589","author":"Feldmann","year":"2021","journal-title":"Nature"},{"key":"ref_197","doi-asserted-by":"crossref","unstructured":"Br\u00fcckerhoff-Pl\u00fcckelmann, F., Feldmann, J., Gehring, H., Zhou, W., Wright, C.D., Bhaskaran, H., and Pernice, W. (2022). Broadband photonic tensor core with integrated ultra-low crosstalk wavelength multiplexers. Nanophotonics.","DOI":"10.1515\/nanoph-2021-0752"},{"key":"ref_198","doi-asserted-by":"crossref","first-page":"636","DOI":"10.1038\/s41467-017-00714-1","article-title":"Multipurpose silicon photonics signal processor core","volume":"8","author":"Gasulla","year":"2017","journal-title":"Nat. Commun."},{"key":"ref_199","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JSTQE.2019.2941485","article-title":"Photonic multiply-accumulate operations for neural networks","volume":"26","author":"Nahmias","year":"2019","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_200","doi-asserted-by":"crossref","first-page":"218","DOI":"10.1364\/OPTICA.379228","article-title":"Experimental investigation of silicon and silicon nitride platforms for phase-change photonic in-memory computing","volume":"7","author":"Li","year":"2020","journal-title":"Optica"},{"key":"ref_201","doi-asserted-by":"crossref","first-page":"111101","DOI":"10.1063\/1.5042413","article-title":"Tutorial: Brain-inspired computing using phase-change memory devices","volume":"124","author":"Sebastian","year":"2018","journal-title":"J. Appl. Phys."},{"key":"ref_202","doi-asserted-by":"crossref","first-page":"093502","DOI":"10.1063\/1.5140350","article-title":"O-band N-rich silicon nitride MZI based on GST","volume":"116","author":"Faneca","year":"2020","journal-title":"Appl. Phys. Lett."},{"key":"ref_203","doi-asserted-by":"crossref","first-page":"2002049","DOI":"10.1002\/adom.202002049","article-title":"Non-Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low-Loss Phase Change Material","volume":"9","author":"Fang","year":"2021","journal-title":"Adv. Opt. Mater."},{"key":"ref_204","doi-asserted-by":"crossref","first-page":"16394","DOI":"10.1364\/OE.389598","article-title":"On-chip sub-wavelength Bragg grating design based on novel low loss phase-change materials","volume":"28","author":"Faneca","year":"2020","journal-title":"Opt. Express"},{"key":"ref_205","doi-asserted-by":"crossref","first-page":"2002447","DOI":"10.1002\/adfm.202002447","article-title":"A new family of ultralow loss reversible phase-change materials for photonic integrated circuits: Sb2S3 and Sb2Se3","volume":"30","author":"Delaney","year":"2020","journal-title":"Adv. Funct. Mater."},{"key":"ref_206","doi-asserted-by":"crossref","first-page":"1806181","DOI":"10.1002\/adfm.201806181","article-title":"Wide bandgap phase change material tuned visible photonics","volume":"29","author":"Dong","year":"2019","journal-title":"Adv. Funct. Mater."},{"key":"ref_207","doi-asserted-by":"crossref","first-page":"014004","DOI":"10.1088\/2634-4386\/ac156e","article-title":"Towards low loss non-volatile phase change materials in mid index waveguides","volume":"1","author":"Faneca","year":"2021","journal-title":"Neuromorphic Comput. Eng."},{"key":"ref_208","doi-asserted-by":"crossref","first-page":"eabg3500","DOI":"10.1126\/sciadv.abg3500","article-title":"Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material","volume":"7","author":"Delaney","year":"2021","journal-title":"Sci. Adv."},{"key":"ref_209","doi-asserted-by":"crossref","first-page":"6","DOI":"10.1063\/1.2931951","article-title":"Threshold switching and phase transition numerical models for phase change memory simulations","volume":"103","author":"Redaelli","year":"2008","journal-title":"J. Appl. Phys."},{"key":"ref_210","doi-asserted-by":"crossref","first-page":"2001218","DOI":"10.1002\/adma.202001218","article-title":"Nonvolatile electrically reconfigurable integrated photonic switch enabled by a silicon PIN diode heater","volume":"32","author":"Zheng","year":"2020","journal-title":"Adv. Mater."},{"key":"ref_211","doi-asserted-by":"crossref","first-page":"123101","DOI":"10.1063\/1.3148248","article-title":"Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing","volume":"105","author":"Cen","year":"2009","journal-title":"J. Appl. Phys."},{"key":"ref_212","doi-asserted-by":"crossref","first-page":"041102","DOI":"10.1063\/1.3068002","article-title":"Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions","volume":"94","author":"Cen","year":"2009","journal-title":"Appl. Phys. Lett."},{"key":"ref_213","doi-asserted-by":"crossref","first-page":"2000034","DOI":"10.1002\/adpr.202000034","article-title":"Multi-level electro-thermal switching of optical phase-change materials using graphene","volume":"2","author":"Zhang","year":"2021","journal-title":"Adv. Photonics Res."},{"key":"ref_214","doi-asserted-by":"crossref","first-page":"21827","DOI":"10.1021\/acsami.0c02333","article-title":"Modeling electrical switching of nonvolatile phase-change integrated nanophotonic structures with graphene heaters","volume":"12","author":"Zheng","year":"2020","journal-title":"ACS Appl. Mater. Interfaces"},{"key":"ref_215","first-page":"12","article-title":"Graphene microheater for phase change chalcogenides based integrated photonic components","volume":"1","author":"Faneca","year":"2022","journal-title":"Opt. Mater. Express"},{"key":"ref_216","doi-asserted-by":"crossref","first-page":"639","DOI":"10.1109\/JLT.2016.2617624","article-title":"Expanding the Silicon Photonics Portfolio with Silicon Nitride Photonic Integrated Circuits","volume":"35","author":"Rahim","year":"2017","journal-title":"J. Light. Technol."},{"key":"ref_217","doi-asserted-by":"crossref","first-page":"135","DOI":"10.1109\/LPT.2003.818951","article-title":"Wide Range Center Wavelength Trimming of Vertically Coupled Microring Resonator Filter by Direct UV Irradiation to SiN Ring Core","volume":"16","author":"Haeiwa","year":"2004","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_218","doi-asserted-by":"crossref","first-page":"677","DOI":"10.1364\/PRJ.382529","article-title":"Laser trimming of the operating wavelength of silicon nitride racetrack resonators","volume":"8","author":"Jantzen","year":"2020","journal-title":"Photonics Res."},{"key":"ref_219","doi-asserted-by":"crossref","first-page":"1175","DOI":"10.1109\/LPT.2009.2023522","article-title":"Athermalizing and Trimming of Slotted Silicon Microring Resonators with UV-Sensitive PMMA Upper-Cladding","volume":"21","author":"Zhou","year":"2009","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_220","doi-asserted-by":"crossref","first-page":"2251","DOI":"10.1364\/OL.30.002251","article-title":"Trimming of microring resonators by photo-oxidation of a plasma-polymerized organosilane cladding material","volume":"30","author":"Sparacin","year":"2005","journal-title":"Opt. Lett."},{"key":"ref_221","doi-asserted-by":"crossref","first-page":"2401","DOI":"10.1364\/OME.426775","article-title":"Post-fabrication resonance trimming of Si3N4 photonic circuits via localized thermal annealing of a sputter-deposited SiO2 cladding","volume":"11","author":"Xie","year":"2021","journal-title":"Opt. Mater. Express"},{"key":"ref_222","doi-asserted-by":"crossref","first-page":"332","DOI":"10.1109\/JSTQE.2013.2293271","article-title":"Energy efficient and energy proportional optical interconnects for multi-core processors: Driving the need for on-chip sources","volume":"20","author":"Heck","year":"2013","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"ref_223","doi-asserted-by":"crossref","first-page":"579","DOI":"10.1038\/nphoton.2014.175","article-title":"The commercialization of silicon photonics","volume":"8","author":"Rickman","year":"2014","journal-title":"Nat. Photonics"},{"key":"ref_224","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.pquantelec.2019.05.002","article-title":"Integration of III-V lasers on Si for Si photonics","volume":"66","author":"Tang","year":"2019","journal-title":"Prog. Quantum Electron."},{"key":"ref_225","doi-asserted-by":"crossref","first-page":"88","DOI":"10.1038\/nphoton.2014.321","article-title":"Lasing in direct-bandgap GeSn alloy grown on Si","volume":"9","author":"Wirths","year":"2015","journal-title":"Nat. Photonics"},{"key":"ref_226","doi-asserted-by":"crossref","first-page":"205","DOI":"10.1038\/s41586-020-2150-y","article-title":"Direct-bandgap emission from hexagonal Ge and SiGe alloys","volume":"580","author":"Fadaly","year":"2020","journal-title":"Nature"},{"key":"ref_227","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.pcrysgrow.2015.11.001","article-title":"Si\u2013Ge\u2013Sn alloys: From growth to applications","volume":"62","author":"Wirths","year":"2016","journal-title":"Prog. Cryst. Growth Charact. Mater."},{"key":"ref_228","doi-asserted-by":"crossref","first-page":"e358","DOI":"10.1038\/lsa.2015.131","article-title":"On-chip light sources for silicon photonics","volume":"4","author":"Zhou","year":"2015","journal-title":"Light. Sci. Appl."},{"key":"ref_229","doi-asserted-by":"crossref","first-page":"031306","DOI":"10.1063\/5.0046183","article-title":"Low noise, tunable silicon photonic lasers","volume":"8","author":"Malik","year":"2021","journal-title":"Appl. Phys. Rev."},{"key":"ref_230","doi-asserted-by":"crossref","first-page":"3878","DOI":"10.1364\/OL.38.003878","article-title":"Measurements of the refractive indices and thermo-optic coefficients of Si 3 N 4 and SiO x using microring resonances","volume":"38","author":"Arbabi","year":"2013","journal-title":"Opt. Lett."},{"key":"ref_231","doi-asserted-by":"crossref","first-page":"041905","DOI":"10.1063\/1.4738989","article-title":"Thermo-optic coefficient of silicon at 1550 nm and cryogenic temperatures","volume":"101","author":"Komma","year":"2012","journal-title":"Appl. Phys. Lett."},{"key":"ref_232","doi-asserted-by":"crossref","first-page":"416","DOI":"10.1063\/1.1435801","article-title":"Optical dispersion, two-photon absorption and self-phase modulation in silicon waveguides at 1.5 \u03bcm wavelength","volume":"80","author":"Tsang","year":"2002","journal-title":"Appl. Phys. Lett."},{"key":"ref_233","doi-asserted-by":"crossref","first-page":"041315","DOI":"10.1063\/1.5096322","article-title":"Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs","volume":"6","author":"Wasisto","year":"2019","journal-title":"Appl. Phys. Rev."},{"key":"ref_234","doi-asserted-by":"crossref","first-page":"1834","DOI":"10.1038\/s41467-021-22046-x","article-title":"Integrated avalanche photodetectors for visible light","volume":"12","author":"Yanikgonul","year":"2021","journal-title":"Nat. Commun."},{"key":"ref_235","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1063\/1.116127","article-title":"Near-field optical data storage","volume":"68","author":"Terris","year":"1996","journal-title":"Appl. Phys. Lett."},{"key":"ref_236","first-page":"142","article-title":"Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications","volume":"Volume 9372","author":"Kumari","year":"2015","journal-title":"High Contrast Metastructures IV"},{"key":"ref_237","doi-asserted-by":"crossref","first-page":"1700206","DOI":"10.1002\/lpor.201700206","article-title":"Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm","volume":"12","author":"Kumari","year":"2018","journal-title":"Laser Photonics Rev."},{"key":"ref_238","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2017.2717380","article-title":"Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit","volume":"9","author":"Kumari","year":"2017","journal-title":"IEEE Photonics J."},{"key":"ref_239","doi-asserted-by":"crossref","unstructured":"Roelkens, G., Haglund, E.P., Kumari, S., Haglund, E., Gustavsson, J.S., Baets, R., and Larsson, A. (2017). 850 nm hybrid vertical cavity laser integration for on-chip silicon photonics light sources. Optical Fiber Communication Conference, Optical Society of America.","DOI":"10.1364\/OFC.2017.W3E.6"},{"key":"ref_240","doi-asserted-by":"crossref","first-page":"755","DOI":"10.1364\/OPTICA.426065","article-title":"CMOS-foundry-based blue and violet photonics","volume":"8","author":"Morin","year":"2021","journal-title":"Optica"},{"key":"ref_241","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JQE.2020.3021404","article-title":"III-N\/Si3N4 Integrated Photonics Platform for Blue Wavelengths","volume":"56","author":"Arefin","year":"2020","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_242","doi-asserted-by":"crossref","first-page":"393","DOI":"10.1515\/nanoph-2017-0085","article-title":"Mid-infrared integrated photonics on silicon: A perspective","volume":"7","author":"Lin","year":"2018","journal-title":"Nanophotonics"},{"key":"ref_243","doi-asserted-by":"crossref","first-page":"268","DOI":"10.1038\/s42005-021-00770-6","article-title":"Tunable single-mode chip-scale mid-infrared laser","volume":"4","author":"Shim","year":"2021","journal-title":"Commun. Phys."},{"key":"ref_244","doi-asserted-by":"crossref","first-page":"E218","DOI":"10.1364\/AO.57.00E218","article-title":"Thermally stable hybrid cavity laser based on silicon nitride gratings","volume":"57","author":"Iadanza","year":"2018","journal-title":"Appl. Opt."},{"key":"ref_245","doi-asserted-by":"crossref","first-page":"386","DOI":"10.1364\/OPTICA.382989","article-title":"Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing","volume":"7","author":"Haq","year":"2020","journal-title":"Optica"},{"key":"ref_246","doi-asserted-by":"crossref","first-page":"20","DOI":"10.1364\/OPTICA.384026","article-title":"Narrow-linewidth III-V\/Si\/Si3N4 laser using multilayer heterogeneous integration","volume":"7","author":"Xiang","year":"2020","journal-title":"Optica"},{"key":"ref_247","doi-asserted-by":"crossref","first-page":"336","DOI":"10.1364\/OPTICA.391809","article-title":"Heterogeneous silicon nitride photonics","volume":"7","author":"Park","year":"2020","journal-title":"Optica"},{"key":"ref_248","doi-asserted-by":"crossref","unstructured":"Xiang, C., Morton, P.A., and Bowers, J.E. (2019). 1550 nm laser with 320 Hz Lorentzian linewidth based on semiconductor gain chip and extended Si3N4 Bragg grating. Science and Innovations, Optical Society of America.","DOI":"10.1364\/CLEO_SI.2019.SW4N.6"},{"key":"ref_249","doi-asserted-by":"crossref","first-page":"21713","DOI":"10.1364\/OE.398906","article-title":"Hybrid integrated InP-Si3N4 diode laser with a 40-Hz intrinsic linewidth","volume":"28","author":"Fan","year":"2020","journal-title":"Opt. Express"},{"key":"ref_250","doi-asserted-by":"crossref","first-page":"4541","DOI":"10.1364\/OL.42.004541","article-title":"Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator","volume":"42","author":"Stern","year":"2017","journal-title":"Opt. Lett."},{"key":"ref_251","doi-asserted-by":"crossref","first-page":"2630","DOI":"10.1109\/JLT.2020.2972065","article-title":"Flip-chip integration of InP to SiN photonic integrated circuits","volume":"38","author":"Theurer","year":"2020","journal-title":"J. Light. Technol."},{"key":"ref_252","doi-asserted-by":"crossref","first-page":"401","DOI":"10.1038\/s41586-018-0598-9","article-title":"Battery-operated integrated frequency comb generator","volume":"562","author":"Stern","year":"2018","journal-title":"Nature"},{"key":"ref_253","doi-asserted-by":"crossref","first-page":"81","DOI":"10.1038\/s41586-018-0065-7","article-title":"An optical-frequency synthesizer using integrated photonics","volume":"557","author":"Spencer","year":"2018","journal-title":"Nature"},{"key":"ref_254","first-page":"231","article-title":"A hybrid semiconductor-glass waveguide laser","volume":"Volume 9135","author":"Fan","year":"2014","journal-title":"Laser Sources and Applications II"},{"key":"ref_255","doi-asserted-by":"crossref","unstructured":"De Beeck, C.O., Elsinger, L., Haq, B., Roelkens, G., and Kuyken, B. (2019). Heterogeneously integrated laser on a silicon nitride platform via micro-transfer printing. Frontiers in Optics, Optical Society of America.","DOI":"10.1364\/FIO.2019.FTu6B.1"},{"key":"ref_256","doi-asserted-by":"crossref","first-page":"2000485","DOI":"10.1002\/lpor.202000485","article-title":"Low Noise Heterogeneous III-V-on-Silicon-Nitride Mode-Locked Comb Laser","volume":"15","author":"Cuyvers","year":"2021","journal-title":"Laser Photonics Rev."},{"key":"ref_257","doi-asserted-by":"crossref","first-page":"015804","DOI":"10.1088\/1612-2011\/10\/1\/015804","article-title":"25 kHz narrow spectral bandwidth of a wavelength tunable diode laser with a short waveguide-based external cavity","volume":"10","author":"Oldenbeuving","year":"2012","journal-title":"Laser Phys. Lett."},{"key":"ref_258","doi-asserted-by":"crossref","first-page":"558","DOI":"10.1364\/PRJ.412284","article-title":"Robust hybrid laser linewidth reduction using Si3N4-based subwavelength hole defect assisted microring reflector","volume":"9","author":"Li","year":"2021","journal-title":"Photonics Res."},{"key":"ref_259","doi-asserted-by":"crossref","unstructured":"Yang, Y., Zhao, H., and Ren, X. (2020, January 24\u201327). Monolithic Silicon-based Active Photonic Integration with Specially Designed III\/V Laser and Si3N4 Interlayer Optical Coupler. Proceedings of the 2020 Asia Communications and Photonics Conference (ACP) and International Conference on Information Photonics and Optical Communications (IPOC), Beijing, China.","DOI":"10.1364\/ACPC.2020.M4A.30"},{"key":"ref_260","doi-asserted-by":"crossref","first-page":"28912","DOI":"10.1364\/OE.434913","article-title":"Monolithic integration of laser onto multilayer silicon nitride photonic integrated circuits with high efficiency at telecom wavelength","volume":"29","author":"Yang","year":"2021","journal-title":"Opt. Express"},{"key":"ref_261","doi-asserted-by":"crossref","first-page":"375","DOI":"10.1364\/PRJ.382852","article-title":"Optical beam steering by using tunable, narrow-linewidth butt-coupled hybrid lasers in a silicon nitride photonics platform","volume":"8","author":"Zhu","year":"2020","journal-title":"Photonics Res."},{"key":"ref_262","doi-asserted-by":"crossref","first-page":"2354","DOI":"10.1364\/OE.27.002354","article-title":"Narrow-linewidth, tunable external cavity dual-band diode lasers through InP\/GaAs-Si3N4 hybrid integration","volume":"27","author":"Zhu","year":"2019","journal-title":"Opt. Express"},{"key":"ref_263","first-page":"1","article-title":"Characterization of hybrid InP-TriPleX photonic integrated tunable lasers based on silicon nitride (Si3N4\/SiO2) microring resonators for optical coherent system","volume":"10","author":"Lin","year":"2018","journal-title":"IEEE Photonics J."},{"key":"ref_264","doi-asserted-by":"crossref","first-page":"3269","DOI":"10.1109\/JLT.2018.2838325","article-title":"Tunable self-injected Fabry\u2013Perot laser diode coupled to an external high-Q Si3N4\/SiO2 microring resonator","volume":"36","author":"Li","year":"2018","journal-title":"J. Light. Technol."},{"key":"ref_265","doi-asserted-by":"crossref","first-page":"6017","DOI":"10.1364\/OL.39.006017","article-title":"Heterogeneous lasers and coupling to Si 3 N 4 near 1060 nm","volume":"39","author":"Bovington","year":"2014","journal-title":"Opt. Lett."},{"key":"ref_266","first-page":"1","article-title":"Thermally Tuned High-Performance III-V\/Si3N4 External Cavity Laser","volume":"13","author":"Guo","year":"2021","journal-title":"IEEE Photonics J."},{"key":"ref_267","doi-asserted-by":"crossref","unstructured":"Siddharth, A., Wunderer, T., Lihachev, G., Voloshin, A.S., Haller, C., Wang, R.N., Teepe, M., Yang, Z., Liu, J., and Riemensberger, J. (2021). Near ultraviolet photonic integrated lasers based on silicon nitride. arXiv.","DOI":"10.1364\/CLEO_SI.2022.SF3G.6"},{"key":"ref_268","doi-asserted-by":"crossref","first-page":"15013","DOI":"10.1364\/OE.422621","article-title":"Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity","volume":"29","author":"Vissers","year":"2021","journal-title":"Opt. Express"},{"key":"ref_269","doi-asserted-by":"crossref","first-page":"7573","DOI":"10.1109\/JLT.2021.3089322","article-title":"Low FSR Mode-Locked Laser Based on InP-Si3N4 Hybrid Integration","volume":"39","author":"Ibrahimi","year":"2021","journal-title":"J. Light. Technol."},{"key":"ref_270","doi-asserted-by":"crossref","first-page":"096102","DOI":"10.1063\/5.0058022","article-title":"High-pulse-energy III-V-on-silicon-nitride mode-locked laser","volume":"6","author":"Hermans","year":"2021","journal-title":"APL Photonics"},{"key":"ref_271","doi-asserted-by":"crossref","first-page":"1573","DOI":"10.1364\/OPTICA.441636","article-title":"Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing","volume":"8","author":"Goyvaerts","year":"2021","journal-title":"Optica"},{"key":"ref_272","first-page":"1170508","article-title":"First demonstration of a hybrid integrated InP-Si3N4 diode laser for broadband optical frequency comb generation","volume":"Volume 11705","author":"Bastiaens","year":"2021","journal-title":"Novel In-Plane Semiconductor Lasers XX"},{"key":"ref_273","doi-asserted-by":"crossref","first-page":"5669","DOI":"10.1364\/OE.386356","article-title":"Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser","volume":"28","author":"Fan","year":"2020","journal-title":"Opt. Express"},{"key":"ref_274","first-page":"112741L","article-title":"Hybrid integrated silicon nitride lasers","volume":"Volume 11274","author":"Epping","year":"2020","journal-title":"Physics and Simulation of Optoelectronic Devices XXVIII"},{"key":"ref_275","doi-asserted-by":"crossref","first-page":"5517","DOI":"10.1109\/JLT.2020.3002272","article-title":"Microcomb source based on InP DFB\/Si3N4 microring butt-coupling","volume":"38","author":"Boust","year":"2020","journal-title":"J. Light. Technol."},{"key":"ref_276","unstructured":"Boust, S., Ibrahimi, Y., Paret, J., Garreau, A., Mekhazni, K., Fortin, C., Duport, F., Vallet, M., Fedeli, J., and van Dijk, F. (2020, January 25). Single-mode and multi-mode DBR lasers using InP-Si3N4\/SiO2 integration. Proceedings of the ECIO2020, European Conference on Integrated Optics (ECIO), Paris, France."},{"key":"ref_277","doi-asserted-by":"crossref","first-page":"273","DOI":"10.1109\/LPT.2019.2892851","article-title":"Flip-chip integration of InP and SiN","volume":"31","author":"Theurer","year":"2019","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_278","doi-asserted-by":"crossref","unstructured":"Gallacher, K., Sinclair, M., Millar, R.W., Sharp, O., Mirando, F., Ternent, G., Mills, G., Casey, B., and Paul, D.J. (2019, January 5\u201310). Integrated DFB lasers on Si3N4 photonic platform for chip-scale atomic systems. Proceedings of the 2019 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, USA.","DOI":"10.1364\/CLEO_SI.2019.STu4O.7"},{"key":"ref_279","doi-asserted-by":"crossref","unstructured":"Fan, Y., Oldenbeuving, R.M., Roeloffzen, C.G., Hoekman, M., Geskus, D., Heideman, R.G., and Boller, K.J. (2017). 290 Hz intrinsic linewidth from an integrated optical chip-based widely tunable InP-Si3N4 hybrid laser. CLEO: QELS_Fundamental Science, Optical Society of America.","DOI":"10.1364\/CLEO_AT.2017.JTh5C.9"},{"key":"ref_280","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2016.2633402","article-title":"Optically Integrated InP\u2013Si3N4 Hybrid Laser","volume":"8","author":"Fan","year":"2016","journal-title":"IEEE Photonics J."},{"key":"ref_281","doi-asserted-by":"crossref","first-page":"050901","DOI":"10.1063\/1.5087862","article-title":"Past, present, and future of InP-based photonic integration","volume":"4","author":"Smit","year":"2019","journal-title":"APL Photonics"},{"key":"ref_282","doi-asserted-by":"crossref","first-page":"101303","DOI":"10.1088\/1674-4926\/40\/10\/101303","article-title":"Perspective: Optically-pumped III\u2013V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates","volume":"40","author":"Wei","year":"2019","journal-title":"J. Semicond."},{"key":"ref_283","doi-asserted-by":"crossref","first-page":"346","DOI":"10.1038\/s41566-021-00761-7","article-title":"Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators","volume":"15","author":"Jin","year":"2021","journal-title":"Nat. Photonics"},{"key":"ref_284","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1109\/JPHOT.2020.3037834","article-title":"High-power (>300 mW) on-chip laser with passively aligned silicon-nitride waveguide DBR cavity","volume":"12","author":"Kharas","year":"2020","journal-title":"IEEE Photonics J."},{"key":"ref_285","first-page":"152","article-title":"The wavelength tuning performance of narrow linewidth laser-diode coupled to an external high-Q Si3N4 micro-ring resonator","volume":"Volume 11891","author":"Jing","year":"2021","journal-title":"Semiconductor Lasers and Applications XI"},{"key":"ref_286","doi-asserted-by":"crossref","first-page":"375","DOI":"10.1038\/nphoton.2014.57","article-title":"Coherent terabit communications with microresonator Kerr frequency combs","volume":"8","author":"Pfeifle","year":"2014","journal-title":"Nat. Photonics"},{"key":"ref_287","doi-asserted-by":"crossref","unstructured":"Kuse, N., and Fermann, M.E. (2019). Frequency-modulated comb LIDAR. APL Photonics, 4.","DOI":"10.1063\/1.5120321"},{"key":"ref_288","doi-asserted-by":"crossref","first-page":"121117","DOI":"10.1063\/1.4799284","article-title":"Comb-assisted subkilohertz linewidth quantum cascade laser for high-precision mid-infrared spectroscopy","volume":"102","author":"Galli","year":"2013","journal-title":"Appl. Phys. Lett."},{"key":"ref_289","doi-asserted-by":"crossref","unstructured":"Qin-Fang, X., Mo-Juan, Y., De-Huan, K., Ye-Bing, W., Ben-Quan, L., Yang, G., and Hong, C. (2018). Optical frequency comb active filtering and amplification for second cooling laser of strontium optical clock. Acta Phys. Sin., 67.","DOI":"10.7498\/aps.67.20172733"},{"key":"ref_290","doi-asserted-by":"crossref","first-page":"50","DOI":"10.1109\/LPT.2014.2361833","article-title":"Widely tunable narrow-linewidth lasers using self-injection DBR lasers","volume":"27","author":"Yu","year":"2014","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_291","doi-asserted-by":"crossref","first-page":"7","DOI":"10.1109\/LPT.2012.2225419","article-title":"High-power tunable dilute mode DFB laser with low RIN and narrow linewidth","volume":"25","author":"Faugeron","year":"2012","journal-title":"IEEE Photonics Technol. Lett."},{"key":"ref_292","doi-asserted-by":"crossref","first-page":"1023","DOI":"10.1109\/JQE.1984.1072508","article-title":"Stability analysis for a semiconductor laser in an external cavity","volume":"20","author":"Tromborg","year":"1984","journal-title":"IEEE J. Quantum Electron."},{"key":"ref_293","doi-asserted-by":"crossref","unstructured":"Fang, Z., Cai, H., Chen, G., and Qu, R. (2017). Single Frequency Semiconductor Lasers, Springer.","DOI":"10.1007\/978-981-10-5257-6"},{"key":"ref_294","doi-asserted-by":"crossref","unstructured":"Puckett, M.W., Wang, J., Bose, D., Brodnik, G.M., Wu, J., Nelson, K., and Blumenthal, D.J. (2019). Silicon nitride ring resonators with 0.123 dB\/m loss and Q-factors of 216 million for nonlinear optical applications. The European Conference on Lasers and Electro-Optics, Optical Society of America.","DOI":"10.1109\/CLEOE-EQEC.2019.8872525"},{"key":"ref_295","doi-asserted-by":"crossref","first-page":"770","DOI":"10.1038\/nphoton.2011.255","article-title":"Spectral line-by-line pulse shaping of on-chip microresonator frequency combs","volume":"5","author":"Ferdous","year":"2011","journal-title":"Nat. Photonics"},{"key":"ref_296","doi-asserted-by":"crossref","first-page":"134","DOI":"10.1038\/s41566-021-00925-5","article-title":"Optically reconfigurable quasi-phase-matching in silicon nitride microresonators","volume":"16","author":"Nitiss","year":"2022","journal-title":"Nat. Photonics"},{"key":"ref_297","first-page":"159","article-title":"MOICANA: Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high-performance and low-cost PIC transmitters","volume":"Volume 10924","author":"Vyrsokinos","year":"2019","journal-title":"Optical Interconnects XIX"},{"key":"ref_298","unstructured":"Watts, M.R., Sun, J., Timurdogan, E., Hosseini, E.S., Sorace-Agaskar, C., Yaacobi, A., Su, Z., Moresco, M., Bradley, J., and Leake, G. (2014). Very large scale integrated photonics (VLSI-P). CLEO: Science and Innovations, Optical Society of America."}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/11\/4227\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T23:23:28Z","timestamp":1760138608000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/22\/11\/4227"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,1]]},"references-count":298,"journal-issue":{"issue":"11","published-online":{"date-parts":[[2022,6]]}},"alternative-id":["s22114227"],"URL":"https:\/\/doi.org\/10.3390\/s22114227","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,6,1]]}}}