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These conditions are recognized as strong neutron radiation and high temperatures (up to 350 \u00b0C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of \u22487\u00d71017 cm\u22122. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene\/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.<\/jats:p>","DOI":"10.3390\/s22145258","type":"journal-article","created":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T01:57:11Z","timestamp":1657850231000},"page":"5258","update-policy":"https:\/\/doi.org\/10.3390\/mdpi_crossmark_policy","source":"Crossref","is-referenced-by-count":15,"title":["The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions"],"prefix":"10.3390","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4887-392X","authenticated-orcid":false,"given":"Semir","family":"El-Ahmar","sequence":"first","affiliation":[{"name":"Institute of Physics, Poznan University of Technology, Piotrowo 3, 61-138 Poznan, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8578-6919","authenticated-orcid":false,"given":"Marta","family":"Przychodnia","sequence":"additional","affiliation":[{"name":"Institute of Physics, Poznan University of Technology, Piotrowo 3, 61-138 Poznan, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jakub","family":"Jankowski","sequence":"additional","affiliation":[{"name":"Institute of Physics, Poznan University of Technology, Piotrowo 3, 61-138 Poznan, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3541-2040","authenticated-orcid":false,"given":"Rafa\u0142","family":"Prokopowicz","sequence":"additional","affiliation":[{"name":"National Centre for Nuclear Research, Andrzeja Soltana 7, 05-400 Otwock, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4023-2378","authenticated-orcid":false,"given":"Maciej","family":"Ziemba","sequence":"additional","affiliation":[{"name":"National Centre for Nuclear Research, Andrzeja Soltana 7, 05-400 Otwock, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7767-5581","authenticated-orcid":false,"given":"Maciej J.","family":"Szary","sequence":"additional","affiliation":[{"name":"Institute of Physics, Poznan University of Technology, Piotrowo 3, 61-138 Poznan, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8705-7701","authenticated-orcid":false,"given":"Wiktoria","family":"Reddig","sequence":"additional","affiliation":[{"name":"Institute of Physics, Poznan University of Technology, Piotrowo 3, 61-138 Poznan, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6094-9582","authenticated-orcid":false,"given":"Jakub","family":"Jagie\u0142\u0142o","sequence":"additional","affiliation":[{"name":"\u0141ukasiewicz Research Network\u2014Institute of Microelectronics and Photonics, Aleja Lotnikow 32\/46, 02-668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3410-1523","authenticated-orcid":false,"given":"Artur","family":"Dobrowolski","sequence":"additional","affiliation":[{"name":"\u0141ukasiewicz Research Network\u2014Institute of Microelectronics and Photonics, Aleja Lotnikow 32\/46, 02-668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9493-0756","authenticated-orcid":false,"given":"Tymoteusz","family":"Ciuk","sequence":"additional","affiliation":[{"name":"\u0141ukasiewicz Research Network\u2014Institute of Microelectronics and Photonics, Aleja Lotnikow 32\/46, 02-668 Warsaw, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"1968","published-online":{"date-parts":[[2022,7,14]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"072402","DOI":"10.1063\/1.5110671","article-title":"Reduced thermal dependence of the sensitivity of a planar Hall sensor","volume":"115","author":"Mahfoud","year":"2019","journal-title":"Appl. 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